irfr/u1205 s d g v dss = 55v r ds(on) = 0.027 w i d = 44a ? description parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 44 ? i d @ t c = 100c continuous drain current, v gs @ 10v 31 ? a i dm pulsed drain current ?? 160 p d @t c = 25c power dissipation 107 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 210 mj i ar avalanche current ?? 25 a e ar repetitive avalanche energy ?? 11 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings parameter typ. max. units r q jc junction-to-case CCC 1.4 r q ja junction-to-ambient (pcb mount) ** CCC 50 c/w r q ja junction-to-ambient CCC 110 thermal resistance d-p ak to-252aa i-pa k to-251aa l ultra low on-resistance l surface mount (IRFR1205) l straight lead (irfu1205) l fast switching l fully avalanche rated the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through- hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. 2014-8-15 1 www.kersemi.com
irfr/u1205 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.055 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.027 v gs = 10v, i d = 26a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 17 CCC CCC s v ds = 25v, i d = 25a ? CCC CCC 25 a v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v q g total gate charge CCC CCC 65 i d = 25a q gs gate-to-source charge CCC CCC 12 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC CCC 27 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 7.3 CCC v dd = 28v t r rise time CCC 69 CCC ns i d = 25a t d(off) turn-off delay time CCC 47 CCC r g = 12 w t f fall time CCC 60 CCC r d = 1.1 w, see fig. 10 ?? between lead, 6mm (0.25in.) from package and center of die contact ? c iss input capacitance CCC 1300 CCC v gs = 0v c oss output capacitance CCC 410 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 150 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) nh i gss s d g l s internal source inductance CCC 7.5 CCC r ds(on) static drain-to-source on-resistance l d internal drain inductance CCC 4.5 CCC i dss drain-to-source leakage current s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ?? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 22a, v gs = 0v ? t rr reverse recovery time CCC 65 98 ns t j = 25c, i f =25a q rr reverse recoverycharge CCC 160 240 nc di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics a 44 ? 160 notes: ? v dd = 25v, starting t j = 25c, l = 470h r g = 25 w , i as = 25a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ** when mounted on 1" square pcb (fr-4 or g-10 material ) . for recommended footprint and soldering techniques refer to application note #an-994 ? i sd 25a, di/dt 320a/s, v dd v (br)dss , t j 175c ? this is applied for i-pak, ls of d-pak is measured between lead and center of die contact ? uses irfz44n data and test conditions ? calculated continuous current based on maximum allowable junction temperature; package limitation current = 20a ? pulse width 300s; duty cycle 2%. 2014-8-15 2 www.kersemi.com
fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse width t = 25c c a 4.5v 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v a 4.5v 20 s pulse w idth t = 175c c 1 10 100 1000 45 678 910 t = 25c j gs v , g ate-to-s ource v oltag e (v ) d i , drain-to-source current (a) a v = 2 5v 20s pulse w idth ds t = 175c j 0.0 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature ( c ) r , drain-to-s ource o n r esistance ds(on) (n orm alized) v = 10v gs a i = 4 1a d irfr/u1205 2014-8-15 3 www.kersemi.com
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 500 1000 1500 2000 2500 1 10 100 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v , f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 10203040506070 q , total g ate char g e ( nc ) g v , g ate-to-source voltage (v) gs a for test circuit s ee figure 13 v = 44v v = 28v ds ds i = 25 a d 1 10 100 1000 0.5 1.0 1.5 2.0 2.5 3.0 t = 25c j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source volta g e ( v ) ds i , drain current (a) ope ration in this area limite d by r d ds(on) 10s 100s 1ms 10ms a t = 25c t = 175c sin g le p u ls e c j irfr/u1205 2014-8-15 4 www.kersemi.com
fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 5.0v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d limited by package irfr/u1205 2014-8-15 5 www.kersemi.com
q g q gs q gd v g charge 5.0 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 10v 0 100 200 300 400 500 25 50 75 100 125 150 175 j e , single pulse avalanche energy (m j) as i top 10a 18a bo tto m 25a a startin g t , junction temperature ( c ) v = 25v d dd irfr/u1205 2014-8-15 6 www.kersemi.com
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * irfr/u1205 2014-8-15 7 www.kersemi.com
package outline to-252aa outline dimensions are shown in millimeters (inches) to-252aa (d-park) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.2 5 (.0 10 ) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e to -25 2a a . 4 dimensions show n are before solder dip, s o l d e r d ip m a x. +0 .16 (.00 6). international re ctifie r lo go assembly lot code exa m ple : this is an ir fr120 w ith as sem bly lot cod e 9u1p first portion of part number second portion of part number 120 ir fr 9u 1p a irfr/u1205 2014-8-15 8 www.kersemi.com
package outline to-251aa outline dimensions are shown in millimeters (inches) to-251aa (i-park) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0 .25 (.01 0) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s to j e d e c o u t lin e t o -25 2a a . 4 dimensions show n are before solder dip, s o l d e r d ip m a x. +0.1 6 (.00 6). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) inte rnational rectifier lo go as sem bly lot code first portion of part numbe r second portion of part number 120 9u 1p exam ple : this is an irfu120 w ith assem bly lot code 9u1p irfu irfr/u1205 2014-8-15 9 www.kersemi.com
tape & reel information to-252aa tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. o u tline co nfo rm s to e ia -481. 16 mm 13 inc h irfr/u1205 2014-8-15 10 www.kersemi.com
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