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BUK762R9-40E n-channel trenchmos standard level fet 13 july 2012 product data sheet scan or click this qr code to view the latest information for this product 1. product profile 1.1 general description standard level n-channel mosfet in a sot404 package using trenchmos technology. this product has been designed and qualified to aec q101 standard for use in high performance automotive applications. 1.2 features and benefits ? aec q101 compliant ? repetitive avalanche rated ? suitable for thermally demanding environments due to 175 c rating ? true standard level gate with vgs(th) rating of greater than 1v at 175 c 1.3 applications ? 12 v automotive systems ? motors, lamps and solenoid control ? start-stop micro-hybrid applications ? transmission control ? ultra high performance power switching 1.4 quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175 c - - 40 v i d drain current v gs = 10 v; t mb = 25 c; fig. 1 [1] - - 100 a p tot total power dissipation t mb = 25 c; fig. 2 - - 234 w static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 25 a; t j = 25 c; fig. 11 - 2.4 2.9 m dynamic characteristics q gd gate-drain charge v gs = 10 v; i d = 25 a; v ds = 32 v; fig. 13 ; fig. 14 - 22 - nc [1] continuous current is limited by package.
nxp semiconductors BUK762R9-40E n-channel trenchmos standard level fet BUK762R9-40E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 july 2012 2 / 13 2. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate 2 d drain 3 s source mb d mounting base; connected to drain m b 1 3 2 d2pak (sot404) s d g m b b 0 7 6 3. ordering information table 3. ordering information package type number name description version BUK762R9-40E d2pak plastic single-ended surface-mounted package (d2pak); 3 leads (one lead cropped) sot404 4. marking table 4. marking codes type number marking code BUK762R9-40E BUK762R9-40E 5. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 175 c - 40 v v dgr drain-gate voltage r gs = 20 k - 40 v v gs gate-source voltage t j = 25 c -20 20 v t mb = 25 c; v gs = 10 v; fig. 1 [1] - 100 a i d drain current t mb = 100 c; v gs = 10 v; fig. 1 [1] - 100 a i dm peak drain current t mb = 25 c; pulsed; t p 10 s; fig. 4 - 825 a p tot total power dissipation t mb = 25 c; fig. 2 - 234 w t stg storage temperature -55 175 c t j junction temperature -55 175 c
nxp semiconductors BUK762R9-40E n-channel trenchmos standard level fet BUK762R9-40E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 july 2012 3 / 13 symbol parameter conditions min max unit source-drain diode i s source current t mb = 25 c [1] - 100 a i sm peak source current pulsed; t p 10 s; t mb = 25 c - 825 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d = 100 a; v sup 40 v; r gs = 50 ; v gs = 10 v; t j(init) = 25 c; unclamped; fig. 3 [2] [3] - 419 mj [1] continuous current is limited by package. [2] single-pulse avalanche rating limited by maximum junction temperature of 175 c. [3] refer to application note an10273 for further information. 0 0 3 a a h 1 2 0 0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 0 5 0 1 0 0 1 5 0 2 0 0 t m b ( c ) i d ( a ) ( 1 ) (1) capped at 100a due to package fig. 1. continuous drain current as a function of mounting base temperature t m b ( c ) 0 2 0 0 1 5 0 5 0 1 0 0 0 3 a a 1 6 4 0 8 0 1 2 0 p d e r ( % ) 0 fig. 2. normalized total power dissipation as a function of mounting base temperature
nxp semiconductors BUK762R9-40E n-channel trenchmos standard level fet BUK762R9-40E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 july 2012 4 / 13 0 0 3 a a h 1 2 1 1 0 - 1 1 1 0 1 0 2 1 0 3 1 0 - 3 1 0 - 2 1 0 - 1 1 1 0 t a l ( m s ) i a l ( a ) ( 1 ) ( 2 ) ( 3 ) fig. 3. single pulse avalanche rating; avalanche current as a function of avalanche time 0 0 3 a a h 1 2 2 1 0 - 1 1 1 0 1 0 2 1 0 3 1 0 - 1 1 1 0 1 0 2 v d s ( v ) i d ( a ) l i m i t r d s o n = v d s / i d d c 1 0 0 s 1 0 m s t p = 1 0 s 1 0 0 m s 1 m s fig. 4. safe operating area; continuous and peak drain currents as a function of drain-source voltage 6. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base fig. 5 - - 0.64 k/w r th(j-a) thermal resistance from junction to ambient minimum footprint; mounted on a printed-circuit board - 50 - k/w
nxp semiconductors BUK762R9-40E n-channel trenchmos standard level fet BUK762R9-40E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 july 2012 5 / 13 0 0 3 a a h 1 2 3 s i n g l e s h o t 0 . 2 0 . 1 0 . 0 5 1 0 - 3 1 0 - 2 1 0 - 1 1 1 0 - 6 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 t p ( s ) z t h ( j - m b ) ( k / w ) = 0 . 5 0 . 0 2 t p t p t t p t = fig. 5. transient thermal impedance from junction to mounting base as a function of pulse duration 7. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics i d = 250 a; v gs = 0 v; t j = 25 c 40 - - v v (br)dss drain-source breakdown voltage i d = 250 a; v gs = 0 v; t j = -55 c 36 - - v i d = 1 ma; v ds = v gs ; t j = 25 c; fig. 9 ; fig. 10 2.4 3 4 v i d = 1 ma; v ds = v gs ; t j = -55 c; fig. 10 - - 4.5 v v gs(th) gate-source threshold voltage i d = 1 ma; v ds = v gs ; t j = 175 c; fig. 10 1 - - v v ds = 40 v; v gs = 0 v; t j = 25 c - 0.2 2 a i dss drain leakage current v ds = 40 v; v gs = 0 v; t j = 175 c - - 500 a v gs = 20 v; v ds = 0 v; t j = 25 c - 2 100 na i gss gate leakage current v gs = -20 v; v ds = 0 v; t j = 25 c - 2 100 na v gs = 10 v; i d = 25 a; t j = 25 c; fig. 11 - 2.4 2.9 m r dson drain-source on-state resistance v gs = 10 v; i d = 25 a; t j = 175 c; fig. 12 ; fig. 11 - - 5.5 m dynamic characteristics q g(tot) total gate charge - 79 - nc q gs gate-source charge - 20 - nc q gd gate-drain charge i d = 25 a; v ds = 32 v; v gs = 10 v; fig. 13 ; fig. 14 - 22 - nc
nxp semiconductors BUK762R9-40E n-channel trenchmos standard level fet BUK762R9-40E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 july 2012 6 / 13 symbol parameter conditions min typ max unit c iss input capacitance - 4650 6200 pf c oss output capacitance - 885 1065 pf c rss reverse transfer capacitance v gs = 0 v; v ds = 25 v; f = 1 mhz; t j = 25 c; fig. 15 - 470 640 pf t d(on) turn-on delay time - 24 - ns t r rise time - 29 - ns t d(off) turn-off delay time - 54 - ns t f fall time v ds = 30 v; r l = 1.2 ; v gs = 10 v; r g(ext) = 5 - 32 - ns l d internal drain inductance from upper edge of drain mounting base to center of die - 2.5 - nh l s internal source inductance from source lead to source bonding pad - 7.5 - nh source-drain diode v sd source-drain voltage i s = 25 a; v gs = 0 v; t j = 25 c; fig. 16 - 0.82 1.2 v t rr reverse recovery time - 38.8 - ns q r recovered charge i s = 20 a; di s /dt = -100 a/s; v gs = 0 v; v ds = 25 v - 44.6 - nc 0 0 3 a a h 1 2 4 0 8 0 1 6 0 2 4 0 3 2 0 4 0 0 0 0 . 5 1 1 . 5 v d s ( v ) i d ( a ) v g s ( v ) = 2 0 4 . 5 5 6 8 1 0 4 5 . 5 t j = 25 c; t p = 300 s fig. 6. output characteristics; drain current as a function of drain-source voltage; typical values 0 0 3 a a h 1 2 5 0 2 . 5 5 7 . 5 1 0 4 8 1 2 1 6 2 0 v g s ( v ) r d s o n ( m ) fig. 7. drain-source on-state resistance as a function of gate-source voltage; typical values
nxp semiconductors BUK762R9-40E n-channel trenchmos standard level fet BUK762R9-40E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 july 2012 7 / 13 0 0 3 a a h 1 2 7 0 1 0 0 2 0 0 3 0 0 4 0 0 0 2 4 6 8 v g s ( v ) i d ( a ) t j = 2 5 c t j = 1 7 5 c fig. 8. transfer characteristics; drain current as a function of gate-source voltage; typical values 0 0 3 a a h 0 2 8 1 0 - 6 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 0 2 4 6 v g s ( v ) i d ( a ) m a x t y p m i n fig. 9. sub-threshold drain current as a function of gate-source voltage 0 0 3 a a h 0 2 7 0 1 2 3 4 5 - 6 0 0 6 0 1 2 0 1 8 0 t j ( c ) v g s ( t h ) ( v ) m a x t y p m i n fig. 10. gate-source threshold voltage as a function of junction temperature 0 0 3 a a h 1 3 0 0 3 6 9 1 2 0 1 0 0 2 0 0 3 0 0 4 0 0 i d ( a ) r d s o n ( m ) 8 v g s ( v ) = 2 0 1 0 6 5 . 5 5 t j = 25 c; t p = 300 s fig. 11. drain-source on-state resistance as a function of drain current; typical values
nxp semiconductors BUK762R9-40E n-channel trenchmos standard level fet BUK762R9-40E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 july 2012 8 / 13 0 0 3 a a g 8 1 6 0 0 . 5 1 1 . 5 2 - 6 0 0 6 0 1 2 0 1 8 0 t j ( c ) a fig. 12. normalized drain-source on-state resistance factor as a function of junction temperature 0 0 3 a a a 5 0 8 v g s v g s ( t h ) q g s 1 q g s 2 q g d v d s q g ( t o t ) i d q g s v g s ( p l ) fig. 13. gate charge waveform definitions 0 0 3 a a h 0 5 7 0 2 4 6 8 1 0 0 2 0 4 0 6 0 8 0 q g ( n c ) v g s ( v ) v d s = 3 2 v 1 4 v fig. 14. gate-source voltage as a function of gate charge; typical values 0 0 3 a a h 0 5 8 1 0 2 1 0 3 1 0 4 1 0 - 1 1 1 0 1 0 2 v d s ( v ) c ( p f ) c i s s c r s s c o s s fig. 15. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
nxp semiconductors BUK762R9-40E n-channel trenchmos standard level fet BUK762R9-40E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 july 2012 9 / 13 0 0 3 a a h 1 3 4 0 1 0 0 2 0 0 3 0 0 4 0 0 0 0 . 5 1 1 . 5 2 v s d ( v ) i s ( a ) t j = 2 5 c t j = 1 7 5 c fig. 16. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
nxp semiconductors BUK762R9-40E n-channel trenchmos standard level fet BUK762R9-40E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 july 2012 10 / 13 8. package outline u n i t a r e f e r e n c e s o u t l i n e v e r s i o n e u r o p e a n p r o j e c t i o n i s s u e d a t e i e c j e d e c j e i t a m m a 1 d 1 d m a x . e e l p h d q c 2 . 5 4 2 . 6 0 2 . 2 0 1 5 . 8 0 1 4 . 8 0 2 . 9 0 2 . 1 0 1 1 1 . 6 0 1 . 2 0 1 0 . 3 0 9 . 7 0 4 . 5 0 4 . 1 0 1 . 4 0 1 . 2 7 0 . 8 5 0 . 6 0 0 . 6 4 0 . 4 6 b d i m e n s i o n s ( m m a r e t h e o r i g i n a l d i m e n s i o n s ) s o t 4 0 4 0 2 . 5 5 m m s c a l e p l a s t i c s i n g l e - e n d e d s u r f a c e - m o u n t e d p a c k a g e ( d 2 p a k ) ; 3 l e a d s ( o n e l e a d c r o p p e d ) s o t 4 0 4 e e e b d 1 h d d q l p c a 1 a 1 3 2 m o u n t i n g b a s e 0 5 - 0 2 - 1 1 0 6 - 0 3 - 1 6 fig. 17. d2pak (sot404)
nxp semiconductors BUK762R9-40E n-channel trenchmos standard level fet BUK762R9-40E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 july 2012 11 / 13 9. legal information 9.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions preview the document is a preview version only. the document is still subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer, unless nxp semiconductors and customer have explicitly agreed otherwise in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 9.3 disclaimers limited warranty and liability information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications this nxp semiconductors product has been qualified for use in automotive applications. unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customers sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customers applications and products planned, as well as for the planned application and use of customers third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customers applications or products, or the application or use by customers third party customer(s). customer is responsible for doing all necessary testing for the customers applications and products using nxp semiconductors products in order to avoid a default of the applications and the products or of the application or use by customers third party customer(s). nxp does not accept any liability in this respect. limiting values stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customers general terms and conditions with regard to the purchase of nxp semiconductors products by customer.
nxp semiconductors BUK762R9-40E n-channel trenchmos standard level fet BUK762R9-40E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 july 2012 12 / 13 no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 9.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode are trademarks of nxp b.v. hd radio and hd radio logo are trademarks of ibiquity digital corporation.
nxp semiconductors BUK762R9-40E n-channel trenchmos standard level fet BUK762R9-40E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 july 2012 13 / 13 10. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9 legal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 ? nxp b.v. 2012. all rights reserved for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 13 july 2012

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