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inchange semiconductor product specification silicon npn power transistors 2sc1212 2SC1212A description ? ? with to-126 package ? complement to type 2sa743/743a applications ? for low frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2sc1212 50 v cbo collector-base voltage 2SC1212A open emitter 80 v 2sc1212 50 v ceo collector- emitter voltage 2SC1212A open base 80 v v ebo emitter-base voltage open collector 4 v i c collector current 1 a t a =25 ?? 0.75 p d total power dissipation t c =25 ?? 8 w t j junction temperature 150 ?? t stg storage temperature -55 ?? +150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2sc1212 2SC1212A characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2sc1212 50 v (br)ceo collector-emitter breakdown voltage 2SC1212A i c =10ma ;r be = ?t 80 v 2sc1212 50 v (br)cbo collector-base breakdown voltage 2SC1212A i c =1ma ;i e =0 80 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 4 v v cesat collector-emitter saturation voltage i c =1a ;i b =0.1a 1.5 v v be base-emitter voltage i c =50ma ; v ce =4v 1.0 v i cbo collector cut-off current v cb =50v; i e =0 5 | a h fe-1 dc current gain i c =50ma ; v ce =4v 60 200 h fe-2 dc current gain i c =1a ; v ce =4v 20 f t transition frequency i c =30ma ; v ce =4v 160 mhz ? h fe-1 classifications b c 60-120 100-200
inchange semiconductor product specification 3 silicon npn power transistors 2sc1212 2SC1212A package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2sc1212 2SC1212A

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