gb02sht0 6 - 46 dec 2014 http://www.genesicsemi.com/high - temperature - sic/high - temperature - sic - schottky - rectifiers/ pg 1 of 4 high temperature silicon carbide power schottky diode features package ? 600 v schottky rectifier ? 225 c maximum operating temperature ? zero reverse recovery charge ? superior surge current capability ? po sitive temperature coefficient of v f ? t emperature independent switching behavior ? lowest figure of merit q c /i f ? available screened to mil - prf - 19500 ? rohs compliant to C 46 advantages applications ? high temperature operation ? improved circuit efficiency (lower overall cost) ? low switching losses ? ease of paralleling devices without thermal runaway ? smaller heat sink requirements ? industrys l ow est reverse recovery charge ? industrys l ow est device capacitance ? ideal for output switching of power supplies ? best in class reverse leakage current at operating temperature ? down hole oil drilling ? geothermal instrumentation ? solenoid actuators ? general purpose high - temperature switching ? amplifiers ? solar inverters ? switched - mode power supply (smps) ? power factor correction (pfc) maximum ratings at t j = 225 c, unless otherwise specified parameter symbol conditions values unit repetitive peak reverse voltage v rrm 6 0 0 v continuous forward current i f t c = 25 c 4 a continuous forward current i f t c 225 c 2 a rms forward current i f(rms) t c 225 c 4 a surge non - repetitive forward current, half sine wave i f,sm t c = 25 c, t p = 10 ms 10 a non - repetitive peak forward current i f,max t c = 25 c, t p = 10 s 65 a i 2 t value i 2 dt t c = 25 c, t p = 10 ms 0.5 a 2 s power dissipation p tot t c = 25 c 64 w operating and storage temperature t j , t stg - 55 to 225 c electrical characteristics at t j = 225 c, unless otherwise specified parameter symbol conditions values unit m in . t yp . m ax . diode forward voltage v f i f = 1 a, t j = 25 c 1. 6 v i f = 1 a, t j = 225 c 2. 6 reverse current i r v r = 600 v, t j = 25 c 1 5 a v r = 600 v, t j = 225 c 5 5 0 total capacitive charge q c i f i f,max d i f /dt = 20 0 a/s t j = 21 0 c v r = 600 v 9 nc switching time t s v r = 600 v < 1 7 ns total capacitance c v r = 1 v, f = 1 m hz, t j = 25 c 76 pf v r = 600 v, f = 1 m hz, t j = 25 c 15 thermal characteristics thermal resistance, junction - case r thjc 5 .5 5 c/w mechanical properties mounting torque m 0.6 nm v rrm = 600 v i f (tc=25c) = 4 a q c = 9 nc pin 1 pin 3
gb02sht0 6 - 46 dec 2014 http://www.genesicsemi.com/high - temperature - sic/high - temperature - sic - schottky - rectifiers/ pg 2 of 4 figure 1: typical forward characteristics figure 2: typical reverse characteristics figure 3: power derating curve figure 4: current derating curves (d = t p /t, t p = 400 s) (considering worst case z th conditions ) figure 5 : current vs pulse duration curves at t c = 22 5 c figure 6 : transient thermal impedance
gb02sht0 6 - 46 dec 2014 http://www.genesicsemi.com/high - temperature - sic/high - temperature - sic - schottky - rectifiers/ pg 3 of 4 package dimensions: to - 46 package outline note 1. controlled dimension is inch. dimension in bracket is millimeter. 2. dimensions do not include end flash, mold flash, material protrusions revision history date revision comments supersedes 2014/08/29 0 initial release published by genesic semiconductor, inc. 43670 trade center place suite 155 dulles, va 20166 genesic semiconductor, inc. reserves right to make changes to the product specifications and data in this document without notice . genesic disclaims all and any warranty and liability arising out of use or application of any product. no license, express or implied to any intellectual property rights is granted by this document. unless otherwise expressly indicated, genesic products are not designed, tested or authorized for use in life - saving, medical, aircraft n avigation, communication, air traffic control and weapons systems, nor in applications wh ere their failure may result in death, personal injury and/or property damage.
gb02sht06 - 46 dec 2014 http://ww w.genesicsemi.com/high - temperature - sic/high - temperature - sic - schottky - rectifiers/ page 1 of 1 spice model parameters this is a secure document. copy this code from the spice model pdf file on our website into a spice software pr ogram for simulation of the gb02sht06 - 46 . * model of genesic semiconductor inc. * * $revision: 1.0 $ * $date: 29 - aug - 201 4 $ * * genesic semiconductor inc. * 43670 trade center place ste. 155 * dulles, va 20166 * * copyright (c) 201 4 genesic semiconductor inc. * all rights reserved * * these models are provided "as is, where is, and with no warranty * of any kind either expressed or implied, including but not limited * to any implied warranties of merchantability and fitness for a * particular purpose." * models accurate up to 2 times rated drain current. * * start of gb02sht06 - 46 spice model * .subckt gb02sht06 anode kathode d1 anode kathode gb02sht06 _25c; call the schottky diode model d2 anode kathode gb02sht06 _pin; call the pin diode model .model gb02sht06 _25c d + is 3.57 e - 1 8 rs 0.49751 + trs1 0.0057 trs2 2.40e - 05 + n 1 ikf 322 + eg 1.2 xti 3 + cjo 9.12e - 11 vj 0.371817384 + m 1.527759838 fc 0.5 + tt 1.00e - 10 bv 600 + ibv 1.00e - 03 vpk 600 + iave 2 type sic_schottky + mfg genesic_semiconductor .model gb02sht06 _pin d + is 5.73e - 11 rs 0.72994 + n 5 ikf 800 + eg 3.23 xti - 14 + fc 0.5 tt 0 + bv 600 ibv 1.00e - 03 + vpk 600 iave 2 + type sic_pin .ends * * end of gb02sht06 spice model
|
