? semiconductor components industries, llc, 2006 february, 2006 ? rev. 3 1 publication order number: ntd30n02/d ntd30n02 power mosfet 30 amps, 24 volts n ? channel dpak designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. features ? pb ? free packages are available typical applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage v dss 24 vdc gate ? to ? source voltage ? continuous v gs 20 vdc drain current ? continuous @ t a = 25 c ? single pulse (t p 10 s) i d i dm 30 100 adc apk total power dissipation @ t a = 25 c p d 75 w operating and storage temperature range t j , t stg ? 55 to 150 c single pulse drain ? to ? source avalanche energy ? starting t j = 25 c (v dd = 24 vdc, v gs = 10 vdc, l = 1.0 mh, i l (pk) = 10 a, r g = 25 ) e as 50 mj thermal resistance ? junction ? to ? case ? junction ? to ? ambient (note 1) ? junction ? to ? ambient (note 2) r jc r ja r ja 1.65 67 120 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. when surface mounted to an fr4 board using 1 in. pad size, (cu area 1.127 sq in). 2. when surface mounted to an fr4 board using minimum recommended pad size, (cu area 0.412 sq in). 30 amperes 24 volts r ds(on) = 11.2 m (typ.) n ? channel d s g http://onsemi.com device package shipping ? ordering information ntd30n02 dpak 75 units/rail marking diagram ntd30n02t4 dpak 2500 tape & reel 1 2 3 4 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 1 gate 3 source 2 drain 4 drain yww d30 n02g dpak case 369c style 2 d30n02 = device code y = year ww = work week g = pb ? free device NTD30N02G dpak (pb ? free) 75 units/rail ntd30n02t4g dpak (pb ? free) 2500 tape & reel
ntd30n02 http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (note 3) (v gs = 0 vdc, i d = 250 adc) temperature coefficient (positive) v (br)dss 24 ? 26.5 25.5 ? ? vdc mv/ c zero gate voltage drain current (v ds = 20 vdc, v gs = 0 vdc) (v ds = 24 vdc, v gs = 0 vdc) (v ds = 20 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? ? ? 0.8 1.0 10 adc gate ? body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 3) gate threshold voltage (note 3) (v ds = v gs , i d = 250 adc) threshold temperature coefficient (negative) v gs(th) 1.0 ? 2.1 ? 4.1 3.0 ? vdc mv/ c static drain ? to ? source on ? resistance (note 3) (v gs = 10 vdc, i d = 30 adc) (v gs = 10 vdc, i d = 20 adc) (v gs = 4.5 vdc, i d = 15 adc) r ds(on) ? ? ? ? 11.2 20 14.5 14.5 24 m forward transconductance (note 3) (v ds = 10 vdc, i d = 15 adc) g fs ? 20 ? mhos dynamic characteristics input capacitance (v ds = 20 vdc, v gs = 0 vdc, f = 1.0 mhz) c iss ? 1000 ? pf output capacitance c oss ? 425 ? transfer capacitance c rss ? 175 ? switching characteristics (note 4) turn ? on delay time (v dd = 20 vdc, i d = 30 adc, v gs = 10 vdc, r g = 2.5 ) t d(on) ? 7.0 15 ns rise time t r ? 28 55 turn ? off delay time t d(off) ? 22 35 fall time t f ? 12 20 turn ? on delay time (v dd = 20 vdc, i d = 15 adc, v gs = 4.5 vdc, r g = 2.5 ) t d(on) ? 12.5 ? ns rise time t r ? 115 ? turn ? off delay time t d(off) ? 15 ? fall time t f ? 17 ? gate charge (v ds = 20 vdc, i d = 30 adc, v gs = 4.5 vdc) (note 3) q t ? 14.4 20 nc q 1 ? 4.0 ? q 2 ? 8.5 ? source ? drain diode characteristics forward on ? voltage (i s = 15 adc, v gs = 0 vdc) (i s = 30 adc, v gs = 0 vdc) (note 3) (i s = 15 adc, v gs = 0 vdc, t j = 125 c) v sd ? ? ? 0.95 1.10 0.80 1.2 ? ? vdc reverse recovery time (i s = 30 adc, v gs = 0 vdc, di s /dt = 100 a/ s) (note 3) t rr ? 30 ? ns t a ? 14.5 ? t b ? 15.5 ? reverse recovery stored charge q rr ? 0.013 ? c 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
ntd30n02 http://onsemi.com 3 10 40 30 0.03 0.02 0.01 20 50 0.04 0.07 60 1.6 1.2 1.4 1 0.8 0.6 0.01 100 08 20 2 1 v ds , drain ? to ? source voltage (volts) i d , drain current (amps) 0 v gs , gate ? to ? source voltage (volts) figure 1. on ? region characteristics figure 2. transfer characteristics i d , drain current (amps) 25 4 0.01 0 36 figure 3. on ? resistance versus gate ? to ? source voltage v gs , gate ? to ? source voltage (volts) figure 4. on ? resistance versus drain current and gate voltage i d , drain current (amps) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) figure 5. on ? resistance variation with temperature t j , junction temperature ( c) figure 6. drain ? to ? source leakage current versus voltage v ds , drain ? to ? source voltage (volts) r ds(on) , drain ? to ? source resistance (normalized) i dss , leakage (na) 60 ? 50 50 25 0 ? 25 75 125 100 18 416 12 24 8 3 10 30 8 v v ds 10 v t j = 25 c t j = ? 55 c t j = 100 c v gs = 10 v 150 v gs = 0 v i d = 15 a v gs = 10 v 40 0.02 0.04 v gs = 9 v i d = 15 a t j = 25 c 10 t j = 150 c t j = 100 c 10 0 60 30 40 4 t j = 25 c 20 10 7 v 5 v 4 v 3.4 v 3 v 4567 2 3 5 0.03 78 0.05 0.06 50 3.6 v 4.2 v 4.6 v 5.4 v 6 v t j = 25 c 67 20 50 9 v gs = 4.5 v 1 0.1
ntd30n02 http://onsemi.com 4 c, capacitance (pf) c rss gate ? to ? source or drain ? to ? source voltage (volts) figure 7. capacitance variation 2500 0 v gs v ds 1000 500 v gs = 0 v v ds = 0 v t j = 25 c c iss c oss c rss c iss 1500 2000 10 5 0 5 10152025 figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge figure 9. resistive switching time variation versus gate resistance r g , gate resistance ( ) 1 10 100 1000 1 0 4 1 0 q g , total gate charge (nc) 5 3 2 12 100 48 i d = 30 a v ds = 20 v v gs = 4.5 v t j = 25 c v ds q 2 q 1 q t t r t d(off) t d(on) t f 10 v ds = 20 v i d = 30 a v gs = 10 v 16 0 4 8 12 16 20 v gs , gate ? to ? source voltage (volts) t, time (ns) v gs v ds , drain ? to ? source voltage (volts) i s , source current (amps) 15 0 0.3 drain ? to ? source diode characteristics v sd , source ? to ? drain voltage (volts) v gs = 0 v t j = 25 c figure 10. diode forward voltage versus current 0.5 0.7 1.2 3 6 9 0.9 1.1 12 1 0.8 0.6 0.4
ntd30n02 http://onsemi.com 5 package dimensions dpak case 369c ? 01 issue o d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h ? t ? seating plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.025 0.040 0.63 1.01 u 0.020 ??? 0.51 ??? v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? 123 4 style 2: pin 1. gate 2. drain 3. source 4. drain *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 ntd30n02/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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