'jeis.eu lproauctit one. 20 stern ave. springfield, new jersey 07081 u.s.a. MRF230 (silicon) telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 the rf line npn silicon rf power transistors . . designed for 12.5 volt, mid-band targe-signal amplifier appli- cations in industrial and commercial fm equipment operating in the 40 to 100 mhz range. ? specified 12.5 volt, 90 mhz characteristics - output power = 1.5 watts minimum gain = 10 db efficiency - 55% ? 100% tested for load mismatch at all phase angles with 30:1 vswr ? characterized with series equivalent large-signal impedance parameters ? characterized with parallel equivalent large-signal impedance parameters maximum ratings rating collector-emitter voltage collector-base voltege emitter-base volt* collector current ? continuous total device dissipation s> tc - 25c (ii derate above 25c storage temperature range symbol vceo vcbo vebo tstg 5.0 28.6 watts mw/c thermal characteristics character istic thermal resistance, junction to case symbol c/w (1) these devices are designed for rf operation. the total device dissipation rating applies only when the devices are operated as class c rf amplifiers. 1.5 w -90mhz rf power transistor npn silicon style 1 pin 1 emitter 2. base 3-collector d 1 k l m f 0 r millimeters min 8.89 8.00 610 0.406 0.229 0.406 4.83 0.711 i _&!2i 12.7tp 6.35 max 9.40 8.51 680 o.s33 3.18 0.48t 5,33 0.884 1.02 _ 4snom - [ 1.27 wnom 2.54 - inches min 0.350 0315 0.240 0.01c 0.009 0016 0190 0028 0.029 0.500 0,250 4sd i - max d.370 0.335 0260 0.021 0.125 j3!3- rb.210 0.034 ojj40 _ 1m o.oso 90 mom 0.100 1 - all jeoec dimtnttoni ind rwtit ipply. case 79 oz to 39 nj setni-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, information furnished b> nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use vi semi-conductors enanir.iges customers to verify that datasheets nre current before placing orders.
mr f230 (continued) electrical characteristics(tc = 2oc unless otherwise, noted) characteristic symbol off characteristics collector-emitter breakdown voltage 30:1 through all phaie angles tn 3 second interval after which devices will meet gpe test limits figure 1 - 90 mhz test circuit schematic rf v ^^ \ input > q-jf c1 s.o.sopf. arco4i.2 c2.c6 2s-380 pf. arco 484 c3 2?opfunelco c4 lopfunelco c5 9.0 180 pp. ahco 463 c7 1000 pf unelco c8 0.47 mf erie oiic c.r?mi< c9 20 i?f. is vdo tantalum ul 2 turn?, m& mng. 3/8" i.o. 3/8" u>n8 l2 2.6turni, #70 awq. on ferrite bead. ferroxcube 56-5bq-s5-3b l3 3 turn,, w18 awg. 3/8" i.d.. 1/2" lena l4 0.68 0h, 9230-16 miller molded choke l5 ferrita bead, ferroxcube 56-590-95-36 rl 4.7 ohm. 1/2 w, ids carbon input/output connectors -~ type bnc
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