to-220 -3l 1. base 2. collector 3. emitter to-220 -3l plastic-encapsulate transistors TIP31/31a/31b/31c transistor (npn) fe a t ures medium power linear switching applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless other wise specified) parameter symbol test conditions min m ax unit collector-base breakdown voltage t i p31 tip3 1 a TIP31b TIP31c v (br) cbo i c = 1ma, i e =0 40 60 80 100 v collector-emitter breakdown voltage * TIP31 tip3 1 a TIP31b TIP31c v ceo (sus) i c = 30ma, i b =0 40 60 80 100 v emitter-base breakdown voltage v (br) ebo i e = 1ma, i c =0 5 v collector cut-off current TIP31 tip3 1 a TIP31b TIP31c i cbo v cb =40v, i e =0 v cb =60v, i e =0 v cb =80v, i e =0 v cb =100v, i e =0 200 a collector cut-off current TIP31/31a TIP31b/31c i ceo v ce = 30v, i b = 0 v ce = 60v, i b = 0 0.3 ma emitter cut-off current i ebo v eb =5v, i c =0 1 ma h fe(1) v ce = 4v, i c = 1a 25 dc current gain h fe(2) v ce =4 v, i c = 3a 1 5 75 collector-emitter saturation voltage v ce(sat) i c =3a, i b =0.375a 1.2 v base-emitter voltage v be(on) v ce = 4v, i c =3a 1.8 v transition frequency f t v ce =10v , i c =0.5a 3 mh z * pulse test: pw 300s, duty cycle 2% . symbol parameter tip3 1 tip3 1 a t ip3 1 b tip3 1 c u nit v cbo collector-base voltage 40 60 80 100 v v ceo collector-emitter voltage 40 60 80 100 v v ebo emitter-base voltage 5 v i c collector current 3 a p c collector power dissipation 2 w r ja thermal resistance from junction to ambient 62.5 t j junction temperature 150 t stg storage temperature -55~+150
0.1 1 10 10 100 1000 10 100 0 5 10 15 20 25 30 1e-3 0.01 0.1 1 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 0 1 2 3 1e-4 1e-3 0.01 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-4 1e-3 0.01 0.1 1 0 100 200 300 400 012345678 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1e-4 1e-3 0.01 0.1 1 20 f=1mhz i e =0 / i c =0 t a =25 o c TIP31/31a/31b/31c reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob 2000 500 transition frequency f t (mhz) collector current i c (ma) v ce =10v t a =25 o c i c f t ?? 3 v ce = 4v t a =100 o c t a =25 o c collector current i c (a) dc current gain h fe i c h fe ?? collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a 3 collector current i c (a) base-emitter saturation voltage v besat (v) t a =25 t a =100 =8 i c v besat ?? 3 3 t a =25 t a =100 =8 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (a) common emitter t a =25 20ma 18ma 16ma 14ma 12ma 10ma 8ma 6ma 4ma i b =2ma collector-emitter voltage v ce (v) collector current i c (a) static characteristic vce=4v ta=25 ta=100 o c base-emitter voltage v be (v) collector current i c (a) v be ?? i c
|