ksd-t6t002-001 1 SUM201MN p-channel mosfet + pnp bjt ordering information simple schematic integrated power mosfet with pnp low v ce(sat) switching transistor features ? low r ds (on) (mosfet) and low v ce (sat) (transistor) ? higher efficiency extending battery life ? logic level gate drive (mosfet) ? performance dfn package ? this is a halogen ? free device applications ? power management in portable and battery ? powered products; i.e., cellular and cordless telephones and pcmcia cards this integrated device represents a new level of safety and board ? space reduction by combining the 20v p ? channel fet with a pnp silicon low v ce (sat) switching transistor. this newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. device marking package SUM201MN sum201 dfn8 bottom view 1 2 3 4 5 6 7 8 drain collector drain drain collector collector source gate emitter base dfn-8 bv dss r ds(on) typ. i d max -20v 48m ? @ vgs=-4.5v -5.3a 65m ? @ vgs=-2.5v mosfet bv ceo bv ebo . i c max -20v -5v -5a pnp bjt marking diagram sum201 yww 1 column 1 : device code column 2 : date code (year, week)
ksd-t6t002-001 2 1. surface mounted on fr4 board usin g 1in square pad size (cu area =1.27 in square [1 oz] including traces) 2. fr ? 4 @ 100 mm 2 , 1 oz copper traces. 3. fr ? 4 @ 500 mm 2 , 1 oz copper traces. 4. thermal response. absolute maximum ratings for p-ch mosfet (ta=25 ? c) characteristic symbol rating unit 5sec steady state drain-source voltage v dss -20 v gate-source voltage v gss ? 12 v drain current (dc) (note.1) i d t a =25 -5.3 -3.9 a t a =85 -3.8 -2.8 a drain current (pulsed) i dp ? 20 a continuous source current i s -5.3 -3.9 a total power dissipation (note.1) p d t a =25 2.5 1.3 w t a =85 1.3 0.7 w operating junction and storage temperature range t j , t stg -55 ~ 150 ? c absolute maximum ratings for pnp transistor (ta=25 ? c) characteristic symbol rating unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector current ? continuous i c -5 a peak collector current i cm -10 a thermal characteristics for p-ch mosfet characteristic symbol co ndition typ. max. unit junction to ambient (note.5) r th(j-a) t 5 sec 40 50 /w steady state 80 95 junction to foot (drain) r th(j-f) steady state 15 20 /w thermal characteristics for pnp transistor characteristic symbol max. unit total device dissipation p d (note.2) 635 mw thermal resistance, junction to ambient r th(j-a) (note.2) 200 /w total device dissipation p d (note.3) 1.35 w thermal resistance, junction to ambient r th(j-a) (note.3) 90 /w thermal resistance, junction to lead #1 r th(j-l) 15 /w total device dissipation (single pulse < 10 sec) p dsingle (note.3&4) 2.75 w junction and storage temperature range t j , t stg -55 ~ 150 SUM201MN
ksd-t6t002-001 3 electrical characteristics for p-ch mosfet (ta=25 ? c) characteristic symbol test co ndition min. typ. max. unit static drain-source breakdown voltage bv dss i d =-250 ? a, v gs =0 -20 - - v gate threshold voltage v gs(th) i d =-250 ? a, v ds =v gs -0.6 -1.2 v drain-source cut-off current i dss v ds =-20v, v gs =0v - - -1 ? a gate leakage current i gss v ds =0v, v gs = ? 12v - - ? 100 na on-state drain current (note.6) i d(on) v ds -5.0v, v gs =-4.5v -20 - - a drain-source on-resistance (note.6) r ds(on) v gs =-3.6v, i d =-1.0a - 50 60 m ? v gs =-2.5v, i d =-1.0a - 70 83 forward transfer conductance (note.6) g fs v ds =-10v, i d =-3.9a - 12 - s diode forward voltage (note.6) v sd i s =-2.1a, v gs =0v - -0.8 -1.2 v dynamic (note.7) input capacitance ciss v gs =0v, v ds =-5v, f=1mhz - 710 - pf output capacitance coss - 400 - reverse transfer capacitance crss - 140 - tu r n - o n de l ay t i m e t d(on) v dd =-10v, i d =-1.0a r g =6 ? , r d =10 ? v gs =-4.5v - 14 30 ns rise time t r - 22 55 turn-off delay time t d(off) - 42 100 fall time t f - 35 70 total gate charge q g v dd =-10v, v gs =-4.5v i d =-3.9a - 9.7 22 nc gate-source charge q gs - 1.2 - gate-drain charge q gd - 3.6 - 5. surface mounted on fr 4 board using 1 inch square pad size (cu area =1.27 inch square [1 oz] including traces). 6. pulse test : pulse width 300us, duty cycle 2%. 7. guaranteed by design, not subject to production testing. SUM201MN
ksd-t6t002-001 4 electrical characteristics for pnp transistor (ta=25 ? c) characteristic symbol test co ndition min. typ. max. unit off characteristics collector-base breakdown voltage bv cbo i c =-50 ? a, i e =0 -35 - - v collector-emitter breakdown voltage bv ceo i c =-1ma, i b =0 -20 - - v emitter-base breakdown voltage bv ebo i e =-50 ? a, i c =0 -5 - - v collector cut-off current i cbo v cb =-35v, i e =0 - - -1 ? a emitter cut-off current i ebo v eb =-5v, i c =0 - - -1 ? a on characteristics dc current gain (note.8) h fe * v ce =-2v, i c =-500ma 200 - 400 - collector-emitter saturation voltage (note.8) v ce(sat) i c =-3a, i b =-150ma - - -0.5 v transition frequency f t v cb =-5v, i c =-50ma - 180 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 42 - pf 8. pulse test : pulse width 300us, duty cycle 2%. SUM201MN
ksd-t6t002-001 5 - - - a - - SUM201MN typical characteristic curves (p-channel mosfet) - - - m fig. 1 i d - v ds fig. 4 i s - v sd fig. 3 r ds ( on ) - i d fig. 6 v gs - q g fig. 2 i d - v gs fig. 5 capacitance - v ds
ksd-t6t002-001 6 c - SUM201MN typical characteristics (p-channel mosfet) c - fig. 8 r ds(on) - t j fig. 9 i d - t a fig. 7 v dss - t j
ksd-t6t002-001 7 SUM201MN typical characteristic curves (pnp bjt) fig. 1 pc - ta fig. 2 i c - v be fig. 3 h fe - i c fig. 4 v ce ( sat ) - i c fig. 5 c ob - v cb
ksd-t6t002-001 8 outline dimension unit : mm recommended land pattern [unit: mm] SUM201MN
ksd-t6t002-001 9 SUM201MN the auk corp. products are intended for the use as components in general electronic equipment (office and communication e quipment, measuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safet y device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equi pments without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice.
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