, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. IRFF212,213 1.8 amperes 200,150 volts rds(on) = 2.4 " reld effect power transistor jh\s design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. features ? polysilicon gate ? improved stability and reliability ? no secondary breakdown ? excellent ruggedness ? ultra-fast switching ? independent of temperature ? voltage controlled ? high transconductance ? low input capacitance ? reduced drive requirement ? excellent thermal stability ? ease of paralleling telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 n-channel (to-39) dimensions are in inchcs amd (millimeters) 1-0844) -y.v ^~ ^ type to-205af term 1 source 2>r term 2 gate teflm 3 drain maximum ratings (to = 25 c) (unless otherwise specified) rating drain-source voltage drain-gate voltage, rqs = 1mft continuous drain current @ tc = 25ec pulsed drain current'11 gate-source voltage total power dissipation @ tc = 25 c derate above 25 c operating and storage junction temperature range symbol vdss vdgr id 'dm vgs pd tj, tstg IRFF212 200 200 1.8 7.5 20 15 .12 -55 to 150 irff213 150 150 1.8 7.5 20 15 .12 -55 to 150 units volts volts a a volts watts w/c c thermal characteristics thermal resistance, junction to case thermal resistance, junction to ambient maximum lead temperature for soldering purposes: 1/16" from case for 10 seconds rftjc rftja tl 8.33 175 260 8.33 175 260 6c/w c/w c (1) repetitive rating: pulse width limited by max. junction temperature. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (tc = 25 c) (unless otherwise specified) characteristic symbol min typ max unit off characteristics drain-source breakdown voltage IRFF212 (vqs = 0v. id = 250 aia) irff213 zero gate voltage drain current (vds = max rating, vgs = 0v, tc = 25c) (vds = max rating, x 0.8, vgs = 0v, tc = 125c) gate-source leakage current (vgs = 20v) bvdss idss 'gss 200 150 ? ? ? ? ? ? 250 1000 100 volts m na on characteristics* gate threshold voltage tc = 25c (vds = vgs. id = 250 ma> on-state drain current (vgs = iov, vds = iov> static drain-source on-state resistance (vgs=10v.id = 1.25a) forward transconductance (vds=10v, id=1.25a) vqs(th) 'd(on) f>ds(on) 9fs 2.0 1.8 ? 0.72 ? ? ? ? 4.0 ? 2.4 ? volts a ohms mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance vgs = 0v vds = 25v f = 1 mhz cjss cqss crss ? ? ? ? ? ? 150 80 25 pf pf pf switching characteristics* turn-on delay time rise time turn-off delay time fall time vds = 90v id=1.25a,vgs = 15v rgen = son, rgs = 12.50 (rgb (equiv.) = 10ft) ld(on) t_r tdtoff) tf ? ? ? ? 8 15 10 8 ? ? ? ? ns ns ns ns source-drain diode ratings and characteristics* continuous source current pulsed source current diode forward voltage (tc = 25c, vgs = ov, is = 2.0a) reverse recovery time (ls = 2.2a, dls/dt = 100a/>sec, tc = 125 c) is ism vsd trr qrr ? ? ? ? ? ? ? 290 2.0 1.8 7.5 1.8 ? a a volts ns //c 'pulse test: pulse width < 300 //s, duty cycle s 2% 6 1 0 ob c2 01 s tc tj ?th sin [5 nw is . / / s ? k'c 150-c max s jc r ? 33 k/w ole pulse ?ration in this imitedbyrosic i *s af (il \ g ea ?s \ v \ \. 's \ s? ' ^ \ s, s bff21! rff21: s "^ \ \ - ? ?. x \ s s, s 10^1 100 ia 10ms 100 ma dc i 46810 20 40 60 80100 200 4( vd? dhajh.to-soumci voltage (volt?) maximum safe operating area 0 boo 2.2 2.0 a b 1-8 -j i 16 1 1.2 i" ' o.b lo, bg 04 02 0 typi 1 ? . ? 1 _ r vg ~? ? . _-^ conoi1 s(on) conditions: s(th) conditions: 0*^ ' 3 ^> ions: d-2k ? ? 1 5a'vqs=101 ma, vpg = vq ~ x1 ?? ~-. / s x" ^x^ rdsioni ~? _ 1 ? ? . / --? ^40 0 40 80 120 16 tj. junction tcmperaturt cci cal normalized rdsioh| and vositmivs. temp.
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