underside view pin 1 ? base pin 2 ? emitter pin 3 ? collector high voltage npn power transistor features ? silicon planar epitaxial pnp transistor cecc screening options space quality levels options jan level screening options applications: the 2N6678 is intended for use in switching regulators and inverter circuits. to-3 (to-204aa) mechanical data dimensions in mm (inches) 2N6678 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 4092 issue 1 absolute maximum ratings (t case = 25c unless otherwise stated) v cex collector - emitter voltage 350v v ceo collector - emitter voltage (i b =0) 300v v ebo collector - emitter voltage (i c =0) 8v i c collector current 15a i cm collector peak current 20a i b base current 5a p tot total power dissipation @ t case < 25c 175w t j , t stg maximum junction and storage temperature -65 to +200c
semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
2N6678 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 4092 issue 1 electrical characteristics (t case = 25 c unless otherwise stated) parameter test conditions min. typ. max. unit i ebo emitter cut-off current i c =0 v eb =8v 2 i cev collector cut-off current (v be =-1.5v) v ce =450v 0.1 v ce =450v t c =100c 1 ma v ceo(sus)* collector-emitter sustaining voltage i c =0.2a l c =25mh 400 v h fe * dc current gain i c =15a v ce =3v 8 v ce(sat)* collector-emitter saturation voltage i c =15a i b =3a 1 t c =100c 2 v be(sat)* base-emitter saturation voltage i c =15a i b =3a 1.5 v t r rise time v cc =200v i c =15a 0.6 t s storage time i b1 = -i b2 =3a 2.5 t f fall time v bb =-6v 0.5 s r jc thermal resistance junction - case 1.0 c/w * pulsed: pulse duration = 300s, duty cycle = 2% semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
|
