to-220c 1. base 2. collector 3. emitter base 1 collector 2 3 emitter * medium power linear switching applications * complement to tip41/tip41a/tip41b/tip41c featu r es: maximum r a tings (t a =2 5 unless othe r w i s e noted) symbol ti p 42 ti p 42 a ti p 42 b ti p 42c uni t s v cb o col l ector-ba s e v o l t age v c e o col l ector-emitter v o l t age v e b o v 5 - e g a t l o v e s a b - r e t t i m e i c a 6 - s u o u n i t n o c - t n e r r u c r o t c e l l o c p c w 2 n o i t a p i s s i d r e w o p r o t c e l l o c t j 0 5 1 e r u t a r e p m e t n o i t c n u j t s t g 0 5 1 + o t 5 5 - e g n a r e r u t a r e p m e t e g a r o t s -40 -60 -80 -100 v -40 -60 -80 -100 v par a met e r ? TIP42/42a/42b/42c pb free plating product TIP42/TIP42a/TIP42b/TIP42c pnp silicon epitaxial power transistor pb ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2 1 2 3 9.19 0.20 3.60 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ dimensions in millimeters package dimension
electrica l char a cteristics ( t amb=25 unl ess o t h e r w i s e s p ec i f i e d ) t i n u x a m n i m s n o i t i d n o c t s e t l o b m y s r e t e m a r a p c o llect o r - b ase b r eak d o w n v o l t a g e ti p4 2 tip 4 2 a t i p42 b t i p42 c v ( b r)c b o i c = -1ma , i e = 0 -4 0 -6 0 -8 0 -10 0 v c o llect o r -emitter b r e a k d o w n v o l t a g e ti p42 tip 4 2 a t i p42 b t i p42 c v ( b r)c e o * i c = -30ma, i b = 0 -4 0 -6 0 -8 0 -10 0 v emitter- b a s e b r eak d o w n v o l t a g e v ( b r ) eb o i e = -1ma, i c = 0 - 5 v c oll ec t o r c u t- o ff c u rre n t ti p 42 tip 4 2 a t i p42 b t i p42 c i c b o v c b = -40 v , i e = 0 v c b = -60 v , i e = 0 v c b = -80 v , i e = 0 v c b = - 100 v , i e = 0 -0.4 ma c o llect o r c u t- o ff c u rre n t TIP42/4 2 a ti p42b/42 c i c e o v c e = -30 v , i b = 0 v c e = -60 v , i b = 0 -0.7 ma emitter cut-off current i eb o v e b =- 5 v , i c = 0 -1 ma h fe(1) v c e =- 4 v , i c = - 0 . 3 a 30 dc c u r r e n t g a i n h fe(2) v c e =- 4 v , i c = - 3 a 15 75 c o ll ect o r -em i tter sat u r at i on v o l t a g e v c e (s a t ) i c =- 6 a , i b = -0.6a -1.5 v base-emitter v o l t age v b e v c e =- 4 v , i c =- 6 a - 2 v t r a n s itio n fr e qu e n c y f t v c e = -10 v ,i c =- 0 . 5 3 m h z * pulse tes t ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 ? TIP42/42a/42b/42c
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