? 2007 ixys all rights reserved - 9 20073a MUBW30-12E6K ixys reserves the right to change limits, test conditions and dimensions. converter - brake - inverter module (cbi ) spt igbt three phase rectifer brake chopper three phase inverter v rrm = 600 v v ces = 200 v v ces = 200 v i davm25 = 30 a i c25 = 9 a i c25 = 29 a i fsm = 300 a v ce(sat) = 2.9 v v ce(sat) = 2.9 v pin confguration see outlines. application: ac motor drives with ? input from single or three phase grid ? three phase synchronous or asynchronous motor ? electric braking operation features: ? high level of integration - only one power semiconductor module required for the whole drive ? inverter with spt igbts - low saturation voltage - positiv e temperature coeffcient - fast switching - short tail current ? epitaxial free wheeling diodes with hiperfast and soft reverse recovery ? industry standard package with insu lated copper base plate and soldering pins for pcb mounting ? temperature sense included package: ? ul registered ? industry standard e -pack part name (marking on product) mubw30-2e6k e72873 p h a s e - o u t
? 2007 ixys all rights reserved 2 - 9 20073a MUBW30-12E6K ixys reserves the right to change limits, test conditions and dimensions. ouput inverter t1 - t6 ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c to 50c 200 v v ges v gem max. dc gate voltage max. transient collector gate voltage continuous transient 20 30 v v i c25 i c80 collector current t c = 25c t c = 80c 30 2 a a p tot total power dissipation t c = 25c 30 w v ce(sat) collector emitter saturation voltage i c = 30 a; v ge = 5 v t vj = 25c t vj = 25c 3. 3.8 3.6 v v v ge(th) gate emitter threshold voltage i c = 0.6 ma; v ge = v ce t vj = 25c 4.5 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 25c 0.6 ma ma i ges gate emitter leakage current v ce = 0 v; v ge = 20 v 200 na c ies input capacitance v ce = 25 v; v ge = 0 v; f = mhz 80 pf q g(on) total gate charge v ce = 600 v; v ge = 5 v; i c = 20 a 00 nc t d(on) t r t d(off) t f e on e off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load t vj = 25c v ce = 600 v; i c = 20 a v ge = 5 v; r g = 68 w 2 0 0 320 80 4. .5 ns ns ns ns mj mj i cm reverse bias safe operating area rbsoa; v ge = 5 v; r g = 68 w l = 00 h; clamped induct. load t vj = 25c v cemax = v ces - l s di/dt 45 a t sc (scsoa) short circuit safe operating area v ce = 900 v; v ge = 5 v; t vj = 25c r g = 68 w; non-repetitive 0 s r thjc thermal resistance junction to case (per igbt) 0.95 k/w r thch thermal resistance case to heatsink (per igbt) 0.35 k/w output inverter d1 - d6 ratings symbol defnitions conditions min. typ. max. unit v rrm max. repetitve reverse voltage t vj = 50c 200 v i f25 i f80 forward current t c = 25c t c = 80c 49 32 a a v f forward voltage i f = 30 a; v ge = 0 v t vj = 25c t vj = 25c 2.0 2.9 v v i rm t rr e rec(off) max. reverse recovery current reverse recovery time reverse recovery energy v r = 600 v di f /dt = -500 a/s t vj = 25c i f = 30 a; v ge = 0 v 27 50 tbd a ns j r thjc thermal resistance junction to case (per diode) 0.9 k/w r thch thermal resistance case to heatsink (per diode) 0.3 k/w t c = 25c unless otherwise stated p h a s e - o u t
? 2007 ixys all rights reserved 3 - 9 20073a MUBW30-12E6K ixys reserves the right to change limits, test conditions and dimensions. brake chopper t7 ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c to 50c 200 v v ges v gem max. dc gate voltage max. transient collector gate voltage continuous transient 20 30 v v i c25 i c80 collector current t c = 25c t c = 80c 9 3 a a p tot total power dissipation t c = 25c 90 w v ce(sat) collector emitter saturation voltage i c = 5 a; v ge = 5 v t vj = 25c t vj = 25c 2.9 3.5 3.4 v v v ge(th) gate emitter threshold voltage i c = 0.4 ma; v ge = v ce t vj = 25c 4.5 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 25c 0.8 0.5 ma ma i ges gate emitter leakage current v ce = 0 v; v ge = 20 v 00 na c ies input capacitance v ce = 25 v; v ge = 0 v; f = mhz 600 pf q g(on) total gate charge v ce = 600 v; v ge = 5 v; i c = 0 a 45 nc t d(on) t r t d(off) t f e on e off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load t vj = 25c v ce = 600 v; i c = 0 a v ge = 5 v; r g = 82 w 45 40 290 60 .2 . ns ns ns ns mj mj i cm reverse bias safe operating area rbsoa; v ge = 5 v; r g = 82 w l = 00 h; clamped induct. load t vj = 25c v cemax = v ces - l s di/dt 20 a t sc (scsoa) short circuit safe operating area v ce = 720 v; v ge = 5 v; t vj = 25c r g = 82 w; non-repetitive 0 s r thjc thermal resistance junction to case (per igbt) .35 k/w r thch thermal resistance case to heatsink (per igbt) 0.45 k/w brake chopper d7 ratings symbol defnitions conditions min. typ. max. unit v rrm max. repetitive reverse voltage t vj = 50c 200 v i f25 i f80 forward current t c = 25c t c = 80c 5 0 a a v f forward voltage i f = 5 a; v ge = 0 v t vj = 25c t vj = 25c 2.0 3.5 v v i r reverse current v r = v rrm t vj = 25c t vj = 25c 0.2 0.06 ma ma i rm t rr max. reverse recovery current reverse recovery time v r = 600 v; i f = 0 a di f /dt = -400 a/s t vj = 25c 3 0 a ns r thjc thermal resistance junction to case (per diode) 2.5 k/w r thch thermal resistance case to heatsink (per diode) 0.85 k/w t c = 25c unless otherwise stated p h a s e - o u t
? 2007 ixys all rights reserved 4 - 9 20073a MUBW30-12E6K ixys reserves the right to change limits, test conditions and dimensions. temperature sensor ntc ratings symbol defnitions conditions min. typ. max. unit r 25 b 25/85 resistance t c = 25c 4.45 4.7 35 0 5.0 kw k module ratings symbol defnitions conditions min. typ. max. unit t vj t vjm t stg operating temperature max. virtual junction temperature storage temperature -40 -40 25 50 25 c c c v isol isolation voltage i isol < ma; 50/60 hz 2500 v~ m d mounting torque (m4) 2.0 2.2 nm d s d a creep distance on surface strike distance through air 2.7 2.7 mm mm weight 40 g equivalent circuits for simulation ratings symbol defnitions conditions min. typ. max. unit v 0 r 0 rectifer diode d8 - d3 t vj = 25c 0.90 9 v mw v 0 r 0 igbt t - t6 t vj = 25c .0 90 v mw v 0 r 0 free wheeling diode d - d6 t vj = 25c .5 4 v mw v 0 r 0 igbt t7 t vj = 25c .5 20 v mw v 0 r 0 free wheeling diode d7 t vj = 25c .46 63 v mw i v 0 r 0 t c = 25c unless otherwise stated input rectifer bridge d8 - d13 symbol defnitions conditions maximum ratings v rrm max. repetitive reverse voltage 600 v i fav i davm i fsm average forward current max. average dc output current max. surge forward current sine 80 t c = 80c rectangular; d = / 3 ; bridge t c = 80c t = 0 ms; sine 50 hz t c = 25c 3 89 320 a a a p tot total power dissipation t c = 25c 80 w symbol conditions characteristic values min. typ. max. v f forward voltage i f = 30 a t vj = 25c t vj = 25c .0 . .35 v v i r reverse current v r = v rrm t vj = 25c t vj = 25c 0.4 0.02 ma ma r thjc thermal resistance junction to case (per diode) t vj = 25c .4 k/w r thch thermal resistance case to heatsink (per diode) 0.45 k/w p h a s e - o u t
? 2007 ixys all rights reserved 5 - 9 20073a MUBW30-12E6K ixys reserves the right to change limits, test conditions and dimensions. ordering part name marking on product delivering mode base qty ordering code standard mubw 30- 2e6k mubw30- 2e6k box 0 499 323 outline drawing dimensions in mm ( mm = 0.0394) product marking p h a s e - o u t
? 2007 ixys all rights reserved 6 - 9 20073a MUBW30-12E6K ixys reserves the right to change limits, test conditions and dimensions. 0.001 0.01 0.1 1 0 50 100 150 200 2 3 4 5 6 7 8 9 1 1 0 10 2 10 3 0.0 0.6 1.2 1.8 2.4 0 20 40 60 80 0 20 40 60 80 0 40 80 120 160 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 0.0 0.4 0.8 1.2 1.6 i 2 t i fsm i f a v f t s t ms p tot w i d(av)m a t amb t s k/w a 2 s 0 20 40 60 80 100 120 140 0 20 40 60 80 100 i d(av) t c a v a c c z thjc t vj = 125c t vj = 25c t vj = 45c t vj = 150c 50hz, 80% v rrm t vj = 45c t vj = 150c r tha : 0.2 k/w 0.5 k/w 0.8 k/w 1.5 k/w 3 k/w 5 k/w 8 k/w MUBW30-12E6K fig. 6 transient thermal impedance junction to case fig. forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation versus direct output current and ambient temper ature, sin 80fig. fig. 5 max. forward current vs. case temperature input rectifer bridge d8 - d13 p h a s e - o u t
? 2007 ixys all rights reserved 7 - 9 20073a MUBW30-12E6K ixys reserves the right to change limits, test conditions and dimensions. 0 200 400 600 800 1000 0 10 20 30 40 50 0 50 100 150 200 250 0 1 2 3 4 5 6 0 20 40 60 80 0 20 40 60 80 100 0 3 6 9 12 15 0 1 2 3 4 5 6 0 10 20 30 40 50 60 v ce v i c v ce a i c v nc q g -di/dt v v ge i rm t rr a/ p s mubw 30-12e6k i rm t rr 11 v a 11 v 0 5 10 15 20 0 20 40 60 80 v v ge a i c 0 1 2 3 4 0 10 20 30 40 50 v v f i f a ns 9 v 13 v 13 v 15 v t vj = 25c t vj = 125c v ce = 20 v t vj = 125c t vj = 25c t vj = 125c v r = 600 v i f = 15 a t vj = 25c v ge = 17 v a v ge = 17 v t vj = 125c v ce = 600 v i c = 20 a 15 v 9 v output inverter t1 - t6 / d1 - d6 fig. 7 typ. output characteristics fig. 8 typ. output characteristics fig. 9 typ. transfer characteristics fig. 0 typ. forward characteristics of free wheeling diode fig. typ. turn on gate charge fig. 2 typ. turn off char. of free wheeling diode p h a s e - o u t
? 2007 ixys all rights reserved 8 - 9 20073a MUBW30-12E6K ixys reserves the right to change limits, test conditions and dimensions. 0 10 20 30 40 0 4 8 12 16 20 0 50 100 150 200 250 0 10 20 30 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 50 100 150 200 250 300 350 400 0.00001 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 0 50 100 150 200 250 0.0 0.5 1.0 1.5 2.0 2.5 0 250 500 750 1000 1250 0 50 100 150 200 250 0 2 4 6 8 10 single pulse 0 200 400 600 800 1000 1200 0 10 20 30 40 50 e off t d(off) t f e on t r e off t d(off) t f i c a i c a e off e on t t r g : r g : v ce t s mj e on mj e off ns t i cm k/w z thjc igbt diode v a mj n s t d(on) v ce = 600 v v ge = 15 v i c = 20 a t vj = 125c v ce = 600 v v ge = 15 v i c = 20 a t vj = 125c v ce = 600 v v ge = 15 v r g = 68 : t vj = 125c v ce = 600 v v ge = 15 v r g = 68 : t vj = 125c r g = 68 : t vj = 125c mj ns output inverter t1 - t6 / d1 - d6 fig. 3 typ. turn on energy and switching times versus collector current fig. 4 typ. turn off energy and switching times versus collector current fig. 5 typ. turn on energy versus gate resistor fig.6 typ. turn off energy and switching times versus gate resistor fig. 7 reverse biased safe operating area fig. 8 typ. transient thermal impedance p h a s e - o u t
? 2007 ixys all rights reserved 9 - 9 20073a MUBW30-12E6K ixys reserves the right to change limits, test conditions and dimensions. 0 1 2 3 4 5 6 0 5 10 15 20 25 v v ce a i c 0 1 2 3 4 0 5 10 15 20 25 30 v v f i f a 0 5 10 15 20 0 1 2 3 4 0 100 200 300 400 e off t d(off) t f i c a e off t mj ns 0 20 40 60 80 100 120 0.0 0.4 0.8 1.2 0 200 400 600 v ce = 600v v ge = 15v i c = 20a t vj = 125c e off t d(off) t f : e off t ns mj 0.001 0.01 0.1 1 10 0.01 0.1 1 10 single pulse t s k/w z thjc 0 25 50 75 100 125 150 100 1000 10000 t c : r r g v ce = 600v v ge = 15v r g = 82 : t vj = 125c igbt diode t vj = 25c t vj = 125c v ge = 15v t vj = 125c t vj = 25c brake chopper t7 / d7 fig. 9 typ. output characteristics fig. 20 typ. forward characteristics of free wheeling diode fig. 2 typ. turn off energy and switching times versus collector current fig. 22 typ. turn off energy and switching times versus gate resistor fig. 23 typ. transient thermal impedance fig. 24 typ. thermistor resistance versus temperature p h a s e - o u t
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