ESD5451N 1-line, bi-directional, transient voltage suppressors descriptions the ESD5451N is a bi-directional tvs (transient voltage suppressor). it is specifically designed to protect sensitive electronic components which are connected to power lines, low speed data lines and control lines from over-stress caused by esd (electrostatic discharge), eft (electrical fast transients) and lightning. the ESD5451N may be used to provide esd protection up to 30kv (contact and air discharge) according to iec61000-4-2, and withstand peak pulse current up to 8a (8/20 s) according to iec61000-4-5. the ESD5451N is available in dfn1006-2l package. standard products are pb-free and halogen-free. features ? reverse stand-off voltage: 5v max ? transient protection for each line according to iec61000-4-2 (esd): 30kv (c ontact and air discharge) iec61000-4-4 (eft): 40a (5/50ns) iec61000-4-5 (surge): 8a (8/20 s) ? capacitance: c j = 17.5pf typ. ? low leakage current: i r < 1na typ. ? low clamping voltage: v cl = 9v typ. @ i pp = 16a (tlp) ? solid-state silicon technology applications ? cellular handsets ? tablets ? laptops ? other portable devices ? network communication devices dfn1006-2l (bottom view) circuit diagram 2 = device code * = month code ( a~z) marking (top view) order information device package shipping ESD5451N-2/tr dfn1006-2l 10000/tape&reel 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings electrical characteristics (t a =25 o c, unless otherwise noted) definitions of electrical characteristics parameter symbol rating unit peak pulse power (t p = 8/20 s) p pk 80 w peak pulse current (t p = 8/20 s) i pp 8 a esd according to iec61000-4-2 air discharge v esd 30 kv esd according to iec61000-4-2 contact discharge 30 operation junction temperature t j 125 o c lead temperature t l 260 o c storage temperature t stg -55~150 o c ESD5451N 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 o c, unless otherwise noted) notes: 1) tlp parameter: z 0 = 50 ? , t p = 100ns, t r = 2ns, averaging window from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) contact discharge mode, according to iec61000-4-2. 3) non-repetitive current pulse, according to iec61000-4-5. parameter symbol condition min. typ. max. unit reverse stand-off voltage v rwm 5 v reverse leakage current i r v rwm = 5v <1 50 na reverse breakdown voltage v br i br = 1ma 5.1 v reverse holding voltage v hold i hold = 50ma 5.1 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 9 v clamping voltage 2) v cl v esd = 8kv 9 v clamping voltage 3) v cl i pp = 1a, t p = 8/20 s 6.5 v i pp = 5a, t p = 8/20 s 8.5 v i pp = 8a, t p = 8/20 s 10 v dynamic resistance 1) r dyn 0.20 ? junction capacitance c j v r = 0v, f = 1mhz 17.5 22 pf v r = 5v, f = 1mhz 11.5 16 pf ESD5451N 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t a =25 o c, unless otherwise noted) 8/20 s waveform per iec61000-4-5 clamping voltage vs. peak pulse current non-repetitive peak pulse power vs. pulse time contact discharge current waveform per iec61000-4-2 capacitance vs. reveres voltage power derating vs. ambient temperature -5 -4 -3 -2 -1 0 1 2 3 4 5 10 12 14 16 18 20 f = 1mhz v ac = 50mv c j - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 255075100125150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 t 2 t 1 front time: t 1 = 1.25 ?? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t 0246810 5 6 7 8 9 10 pin2 to pin1 pin1 to pin2 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) ESD5451N 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t a =25 o c, unless otherwise noted) esd clamping (+8kv contact discharge per iec61000-4-2) tlp measurement esd clamping (-8kv contact discharge per iec61000-4-2) -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 -20 -16 -12 -8 -4 0 4 8 12 16 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v) ESD5451N 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions dfn1006-2l top view bottom view side view symbol dimensions in millimeter min. typ. max. a 0.40 - 0.50 a1 0.00 - 0.05 a3 0.125 ref. d 0.95 1.00 1.05 e 0.55 0.60 0.65 b 0.20 0.25 0.30 l 0.45 0.50 0.55 e 0.65 typ. recommend land pattern (unit: mm) 0.30 0.85 1.40 0.55 0.60 notes: this recommended land pattern is for reference purposes only. please consult your manufacturing group to ensure your pcb design guidelines are met. ESD5451N 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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