ESD5302F 2-lines, uni-directional, ultra-low capacitance transient voltage suppressors descriptions the ESD5302F is an ultra-low capacitance tvs (transient voltage suppressor) array designed to protect high speed data interfaces. it has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by esd (electrostatic discharge). the ESD5302F incorporates two pairs of ultra- low capacitance steering diodes plus a tvs diode. the ESD5302F may be used to provide esd protection up to 20kv (contact and air discharge) according to iec61000-4-2, and withstand peak pulse current up to 4a (8/20 s) according to iec61000-4-5. the ESD5302F is available in sot-23 package. standard products are pb-free and halogen-free. features ? stand-off voltage: 5v max ? transient protection for each line according to iec61000-4-2 (esd): 20kv (c ontact and air discharge) iec61000-4-4 (eft): 40a (5/50ns) iec61000-4-5 (surge): 4a (8/20 s) ? ultra-low capacitance: c j = 0.4pf typ. ? ultra-low leakage current: i r <1na typ. ? low clamping voltage: v cl = 20v @ i pp = 16a(tlp) ? solid-state silicon technology applications ? usb 2.0 and usb 3.0 ? hdmi 1.3 and hdmi 1.4 ? sata and esata ? dvi ? ieee 1394 ? pci express ? portable electronics ? notebooks sot-23 (top view) circuit diagram w = will 02 = device code * = month code ( a~z) marking (top view) order information device package shipping ESD5302F-3/tr sot-23 3000/tape&reel gnd 12 3 i/o1 i/o2 w02* 1 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings electrical characteristics (t a =25 o c, unless otherwise noted) notes: 1) tlp parameter: z 0 = 50 ? , t p = 100ns, t r = 2ns, averaging window from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) according to iec61000-4-5. parameter symbol rating unit peak pulse power (t p = 8/20 s) p pk 60 w peak pulse current (t p = 8/20 s) i pp 4 a esd according to iec61000-4-2 air discharge v esd 20 kv esd according to iec61000-4-2 contact discharge 20 operation junction temperature t j 125 o c lead temperature t l 260 o c storage temperature t stg -55~150 o c parameter symbol condition min. typ. max. unit reverse maximum working voltage v rwm 5.0 v reverse leakage current i r v rwm = 5v <1 100 na reverse breakdown voltage v br i t = 1ma 7.0 8.0 9.0 v forward voltage v f i t = 10ma 0.6 0.9 1.2 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 20 v dynamic resistance 1) r dyn 0.65 ? clamping voltage 2) v cl i pp = 1a, t p = 8/20 s 11 v i pp = 4a, t p = 8/20 s 15 v junction capacitance c j v r = 0v, f = 1mhz any i/o pin to gnd 0.40 0.65 pf v r = 0v, f = 1mhz between any i/o pin 0.25 0.40 pf ESD5302F 2 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t a =25 o c, unless otherwise noted) 8/20 s waveform per iec61000-4-5 clamping voltage vs. peak pulse current non-repetitive peak pulse power vs. pulse time contact discharge current waveform per iec61000-4-2 capacitance vs. reveres voltage power derating vs. ambient temperature 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 255075100125150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 012345 8 10 12 14 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 t 2 t 1 front time: t 1 = 1.25 ?? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t 012345 0.20 0.25 0.30 0.35 0.40 0.45 0.50 between pin1 and pin2 pin1 or 2 to pin3 f = 1mhz c j - junction capacitance (pf) v r - reverse voltage (v) ESD5302F 3 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t a =25 o c, unless otherwise noted) esd clamping (+8kv contact discharge per iec61000-4-2) tlp measurement esd clamping (-8kv contact discharge per iec61000-4-2) 0 2 4 6 8 10121416182022 0 2 4 6 8 10 12 14 16 18 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v) ESD5302F 4 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot-23 symbol dimensions in millimeter dimensions in inches min. max. min. max. a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e 0.950typ 0.037typ e1 1.800 2.000 0.071 0.079 l 0.500ref 0.022ref l1 0.300 0.500 0.012 0.020 0 8 0 8 ESD5302F 5 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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