? power management in notebook computer , portable equipment and battery powered systems.
apm2301a handling code temp. range package code package code a : sot-23 operating junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm2301a a : a01x xxxxx - date code lead free code top view of sot-23 p-channel mosfet ? -20v/-3a , r ds(on) =72m ? (typ.) @ v gs =-4.5v r ds(on) =98m ? (typ.) @ v gs =-2.5v ? super high dense cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? lead free available (rohs compliant) d g s g s d note: ty lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. ty lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature. product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
(t a = 25 c unless otherwise noted) !
"#
(t a = 25 c unless otherwise noted) symbol parameter rating unit v dss drain-source voltage -20 v gss gate-source voltage 12 v i d * continuous drain current -3 i dm * 300 s pulsed drain current v gs =-4.5v -10 a i s * diode continuous forward current -1 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25 c 0.83 p d * maximum power dissipation t a =100 c 0.3 w r ja * thermal resistance-junction to ambient 150 c/w note: *surface mounted on 1in 2 pad area, t 10sec. apm2301aa symbol parameter test condition min. typ. max. unit static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =-250 a -20 v v ds =-16v, v gs =0v -1 i dss zero gate voltage drain current t j =85 c -30 a v gs(th) gate threshold voltage v ds =v gs , i ds =-250 a -0.5 -0.6 -1 v i gss gate leakage current v gs =12v, v ds =0v 100 na v gs =-4.5v, i ds =-3a 72 90 r ds(on) a drain-source on-state resistance v gs =-2.5v, i ds =-2a 98 115 m ? v sd a diode forward voltage i sd =-1.25a, v gs =0v -0.7 -1.3 v gate charge characteristics b q g total gate charge 9 12 q gs gate-source charge 3 q gd gate-drain charge v ds =-10v, v gs =-4.5v, i ds =-3a 1.2 nc product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
!
"#
$" %& (t a = 25 c unless otherwise noted) apm2301aa symbol parameter test condition min. typ. max. unit dynamic characteristics b r g gate resistance v gs =0v,v ds =0v,f=1mhz 11 ? c iss input capacitance 550 c oss output capacitance 120 c rss reverse transfer capacitance v gs =0v, v ds =-15v, frequency=1.0mhz 80 pf t d(on) turn-on delay time 13 24 t r turn-on rise time 36 66 t d(off) turn-off delay time 45 82 t f turn-off fall time v dd =-10v, r l =10 ? , i ds =-1a, v gen =-4.5v, r g =6 ? 37 68 ns notes: a : pulse test ; pulse width 300 s, duty cycle 2%. b : guaranteed by design, not subject to production testing. product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
