KTA1663 transistor (pnp) features power dissipation p cm: 0.5 w (tamb=25 ) collector current i cm: -1.5 a collector-base voltage v (br)cbo : -35 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic=-1ma, i e =0 -35 v collector-emitter breakdown voltage v (br)ceo i c = -10ma , i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e =-1ma, i c =0 -5 v collector cut-off current i cbo v cb =-30v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 a dc current gain h fe v ce =-2v, i c = -500ma 100 320 collector-emitter saturation voltage v ce(sat) i c =-1.5a, i b = -30ma -2.0 v base-emitter saturation votage v be v ce =-2v, ic=500ma -1.0 transition frequency f t v ce = -5v, i c =- 50ma 80 mhz coolletor output capacitance c ob v cb =-10v, i e =0,f=1mh z 50 p f classification of h fe rank o y range 100-200 160-320 marking ho hy sot-89 1. base 2. collector (heat sink) 3. emitter 1 2 3 KTA1663 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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