WCM2007 n- and p-channel, 20v, mosfet descriptions the WCM2007 is the n- and p-channel enhancement mos field effect transistor as a single package for dc-dc converter or level shift applications, uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. standard product WCM2007 is pb-free. features z trench technology z supper high density cell design for extremely low rds(on) z exceptional on resistance and maximum dc current capability z small package design with sot-563. applications z driver: relays, solenoids, lamps, hammers z power supply converters circuit z load/power switching for potable device sot-563 pin configuration (top view) 07* 07 = device code * = date code marking order information device package shipping WCM2007-6/tr sot-563 3000/tape&reel v (br)dss r ds(on) max. (m
) 220@ 4.5v 260@ 2.5v n-channel 20 v 320@ 1.8v 600@- 4.5v 780@ -2.5v p-channel -20 v 960@ -1.8v 6 5 4 1 2 3 d1 6 g2 5 s2 4 1 s1 2 g1 3 d2 1 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings (t a =25 o c unless otherwise noted) thermal resistance ratings a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. n-channel p-channel unit parameter symbol 10 s steady state 10 s steady state drain-source voltage v ds +20 -20 v gate-source voltage v gs f 6 v t a =25c 0.88 0.80 -0.64 -0.56 continuous drain current a t a =70c i d 0.71 0.64 -0.51 -0.45 a t a =25c 0.37 0.30 0.37 0.29 maximum power dissipation a t a =70c p d 0.23 0.19 0.23 0.18 w t a =25c 0.76 0.69 -0.54 -0.50 continuous drain current b t a =70c i d 0.60 0.55 -0.43 -0.40 a t a =25c 0.27 0.22 0.27 0.22 maximum power dissipation b t a =70c p d 0.17 0.14 0.17 0.14 w pulsed drain current c i dm 1.4 -1.0 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c n-channel p-channel parameter symbol typical maximum typical maximum unit t ? 10 s 285 335 290 335 junction-to-ambient thermal resistance a steady state r ja 340 405 350 430 t ? 10 s 385 450 385 460 junction-to-ambient thermal resistance b steady state r ja 455 545 465 555 junction-to-case thermal resistance steady state r jc 260 300 280 320 c/w WCM2007 2 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (t a =25 o c unless otherwise noted) symbol parameter test condition min typ. max unit off characteristics v gs =0v, i d =250ua n-ch 20 v( br ) dss drain-source breakdown voltage v gs =0v, i d =-250ua p-ch -20 v v ds =16v, v s =0v n-ch +1 i dss zero gate voltage drain current v ds =-16v, v s =0v p-ch -1 ua n-ch f 5 i gss gate Csource leakage current v ds =0v, v gs = f 5v p-ch f 5 ua on characteristics v ds = v gs , i d =250ua n-ch 0.40 0.58 0.90 v gs(th) gate threshold voltage v ds = v gs , i d =-250ua p-ch -0.40 -0.55 -0.90 v v gs =4.5v, i d =0.55a n-ch 220 310 v gs =-4.5v, i d =-0.45a p-ch v gs =2.5v, i d =0.45a n-ch 260 360 m ? v gs =-2.5v, i d =-0.35a p-ch v gs =1.8v, i d =0.35a n-ch 320 460 r ds(on) drain-source on-resistance v gs =-1.8v, i d =-0.25a p-ch vds = 5 v, id = 0.55a n-ch 2.0 g fs forward transconductance v ds = -5 v, i d =-0.45a p-ch 1.25 s dynamic characteristics n-ch 50 ciss input capacitance p-ch 74.5 n-ch 13 nmos: v ds =10v, pf coss output capacitance p-ch 10.8 n-ch 8 crss reverse transfer capacitance v gs pmos:v ds =-10v, v gs =0v, f=100khz p-ch 10.2 n-ch 1.15 q g(tot) total gate charge p-ch 1.8 n-ch 0.06 q g(th) threshold gate charge p-ch 0.12 nc n-ch 0.15 q gs gate-source charge p-ch 0.18 n-ch 0.23 p-ch 0.74 q gd gate-drain charge 600 810 780 1050 960 1300 =0v, f=100khz 4 ^y) _ - ' / ) * j + ' , - - ' () * p o 1 ' - i ^y) _ - ' / ) * 5 j + ' , - - ' () * 5 p o 1 ' , - - . / - * 5 + o p 1 3 - , - . - * - + o 1 1 3 - / WCM2007 3 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
symbol parameter test condition min typ. max unit switching characteristics n-ch 22 t d(on) turn-on delay time p-ch 45 n-ch 80 t r turn-on rise time p-ch 140 n-ch 700 t d(off) turn-off delay time p-ch 1500 n-ch 380 t f turn-off fall time p-ch 2100 ns drain-to-source diode characteristics v gs =0v, i s =0.15a n-ch 0.5 0.70 1.5 v sd forward diode voltage v gs =0v, i s =-0.15a p-ch v -0.5 -0.65 -1.5 b.c d e / / f = : e g e jk f 7 l 8 e g m / f : l 8 n ; j f o i 6 b.c d e / / f ! = : e g e jk f ! 7 l 8 e g ; j f o i 8 . / * 5 + o p 1 3 WCM2007 4 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
nmos typical characteristics (ta=25 o c, unless otherwise noted) 0.0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 v gs = 2.5v ~5.0v output characteristics on-resistance vs. drain current on-resistance vs. junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.4 0.8 1.2 1.6 2.0 t=-50 o c transfer characteristics on-resistance vs. gate-to-source voltage threshold voltage vs. temperature v gs =2.0v v gs =1.5v i ds -drain-to-source current (a) v ds -drain-to-source voltage(v) t=25 o c t=125 o c i ds -drain to source current(a) v gs -gate-to-source voltage(v) v ds =5v 0.4 0.8 1.2 1.6 2.0 100 150 200 250 300 350 400 v gs =4.5v v gs =1.8v 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 400 800 1200 1600 r ds(on) - on-resistance (m : ) v gs -gate-to-source voltage(v) v gs =2.5v r ds(on) - on-resistance(m : ) i ds -drain-to-source current(a) -50 -25 0 25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i d =250ua v gs(th) gate threshold voltage (v) temperature ( o c) -50 -25 0 25 50 75 100 125 150 120 160 200 240 280 320 vgs=4.5v, id=0.55a r ds(on) - on-resistance (m : ) temperature( o c) WCM2007 5 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance body diode forward voltage safe operating power transient thermal response (junction-to-ambient) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.2 0.4 0.6 0.8 t=25 o c t=150 o c i sd -source to drain current(a) 0246810 0 10 20 30 40 50 60 v gs =0v f=100khz ciss coss crss c - capacitance(pf) v ds drain-to-source voltage (v) v sd -source-to-drain voltage(v) WCM2007 6 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
pmos typical characteristics (ta=25 o c, unless otherwise noted) 012345 0.0 0.5 1.0 1.5 2.0 v gs = -2.5 ~ -5v output characteristics on-resistance vs. drain current on-resistance vs. junction temperature on-resistance vs. junction temperature transfer characteristics transfer characteristics on-resistance vs. gate-to-source voltage on-resistance vs. gate-to-source voltage threshold voltage vs. temperature threshold voltage vs. temperature v gs = -2.0v v gs = -1.5v -i ds _drain to source current (a) -v ds _drain to source voltage (v) 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0 300 600 900 1200 1500 t=-50 0 c 0.20.40.60.81.0 400 600 800 1000 v gs = -2.5v v gs =-4.5v r ds(on) - on-resistance (m : ) i ds -drain to source current (a) 1.01.52.02.53.03.54.04.5 200 400 600 800 1000 1200 1400 1600 i ds =-0.45a r ds(on) - on-resistance (m : ) -v gs -gate to source voltage(v) -50 0 50 100 150 400 500 600 700 800 900 v gs =-4.5v i ds =-0.45a r ds(on) - on-resistance (m : ) temperature ( 0 c) -25 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 i ds = -250ua -v gs(th) - threshold voltage (v) temperature ( 0 c) t=125 0 c v ds = -5v -i ds - drain current (a) -v gs - gate to drain voltage (v) t=25 0 c WCM2007 7 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance single pulse power 0.4 0.5 0.6 0.7 0.8 0.9 50 100 150 200 250 t=25 0 c transient thermal response (junction-to-ambient) 0246810 0 30 60 90 120 v gs =0 f=100khz c-capacitance (pf) -v ds - drain to source voltage (v) cin cout crss t=125 0 c -i sd - source to drain current (a) -v sd - source to drain voltage(v) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =350c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t o n t p d t o n p d body diode forward voltage safe operating power 0.01 0.10 1.00 10.00 0.1 1 10 100 -v ds (volts) -i d (amps) 100 s 1 0 m s 1ms 0.1s 1 s 10s dc r ds(on) limited t j ( max ) =150c, t a =25c WCM2007 8 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimension sot-563 dimensions in millimeter symbol min. typ. max. a 0.525 0.563 0.600 a1 0.000 0.025 0.050 e 0.450 0.500 0.550 c 0.090 0.125 0.160 d 1.500 1.600 1.700 b 0.170 0.22 0.270 e1 1.100 1.200 1.300 e 1.500 1.600 1.700 l 0.100 0.200 0.300 ? 7 e ref WCM2007 9 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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