2013-10-18 rev.3.0 TPCC8070 1 mosfets silicon n-channel mos (u-mos ) TPCC8070 TPCC8070 TPCC8070 TPCC8070 1. 1. 1. 1. applications applications applications applications ? motor drivers ? dc-dc converters ? switching voltage regulators 2. 2. 2. 2. features features features features (1) small, thin package (2) low drain-source on-resistance: r ds(on) = 10.8 m ? (typ.) (v gs = 10 v) (3) low leakage current: i dss = 10 a (max) (v ds = 60 v) (4) enhancement mode: v th = 2.0 to 3.0 v (v ds = 10 v, i d = 1.0 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1,2,3: source 4: gate 5, 6, 7, 8: drain 4. 4. 4. 4. absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics drain-source voltage gate-source voltage drain current (dc) drain current (pulsed) power dissipation power dissipation power dissipation single-pulse avalanche energy avalanche current channel temperature storage temperature (t c = 25 ) (t = 10 s) (t = 10 s) (note 1) (note 1) (note 2) (note 3) (note 4) (note 5) symbol v dss v gss i d i dp p d p d p d e as i ar t ch t stg rating 60 20 30 90 46.8 2.27 0.84 52.4 30 175 -55 to 150 unit v a w w w mj a note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook ("handling precautions"/"derating concept and methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). tson advance
2013-10-18 rev.3.0 TPCC8070 2 5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal characteristics characteristics channel-to-case thermal resistance channel-to-ambient thermal resistance channel-to-ambient thermal resistance (t c = 25 ) (t = 10 s) (t = 10 s) (note 2) (note 3) symbol r th(ch-c) r th(ch-a) r th(ch-a) max 3.2 66 178 unit /w /w /w note 1: ensure that the channel temperature does not exceed 175 . note 2: device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = 25 v, t ch = 25 (initial), l = 79 h, r g = 25 ? , i ar = 30 a note 5: merely channel temperature is guaranteed 175 . storage temperature range is guaranteed as usual (-55 to 150 ). fig. fig. fig. fig. 5.1 5.1 5.1 5.1 device mounted on a glass-epoxy device mounted on a glass-epoxy device mounted on a glass-epoxy device mounted on a glass-epoxy board (a) board (a) board (a) board (a) fig. fig. fig. fig. 5.2 5.2 5.2 5.2 device mounted on a glass-epoxy device mounted on a glass-epoxy device mounted on a glass-epoxy device mounted on a glass-epoxy board (b) board (b) board (b) board (b) note: this transistor is sensitive to electrostatic discharge and should be handled with care.
2013-10-18 rev.3.0 TPCC8070 3 6. 6. 6. 6. electrical characteristics electrical characteristics electrical characteristics electrical characteristics 6.1. 6.1. 6.1. 6.1. static characteristics (t static characteristics (t static characteristics (t static characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics gate leakage current drain cut-off current drain-source breakdown voltage drain-source breakdown voltage gate threshold voltage drain-source on-resistance symbol i gss i dss v (br)dss v (br)dsx v th r ds(on) test condition v gs = 16 v, v ds = 0 v v ds = 60 v, v gs = 0 v i d = 10 ma, v gs = 0 v i d = 10 ma, v gs = -20 v v ds = 10 v, i d = 1.0 ma v gs = 6 v, i d = 15 a v gs = 10 v, i d = 15 a min 60 40 2.0 typ. 13.3 10.8 max 10 10 3.0 21.3 13.5 unit a v m ? 6.2. 6.2. 6.2. 6.2. dynamic characteristics (t dynamic characteristics (t dynamic characteristics (t dynamic characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics input capacitance reverse transfer capacitance output capacitance switching time (rise time) switching time (turn-on time) switching time (fall time) switching time (turn-off time) symbol c iss c rss c oss t r t on t f t off test condition v ds = 10 v, v gs = 0 v, f = 1 mhz see figure 6.2.1. min typ. 1600 150 260 6 15 10 41 max unit pf ns fig. fig. fig. fig. 6.2.1 6.2.1 6.2.1 6.2.1 switching time test circuit switching time test circuit switching time test circuit switching time test circuit 6.3. 6.3. 6.3. 6.3. gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics total gate charge (gate-source plus gate-drain) gate-source charge 1 gate-drain charge symbol q g q gs1 q gd test condition v dd 48 v, v gs = 10 v, i d = 30 a min typ. 34 8 12 max unit nc 6.4. 6.4. 6.4. 6.4. source-drain characteristics (t source-drain characteristics (t source-drain characteristics (t source-drain characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics reverse drain current (pulsed) diode forward voltage (note 6) symbol i drp v dsf test condition i dr = 30 a, v gs = 0 v min typ. max 90 -1.2 unit a v note 6: ensure that the channel temperature does not exceed 175 .
2013-10-18 rev.3.0 TPCC8070 4 7. 7. 7. 7. marking marking marking marking fig. fig. fig. fig. 7.1 7.1 7.1 7.1 marking marking marking marking
2013-10-18 rev.3.0 TPCC8070 5 8. 8. 8. 8. characteristics curves (note) characteristics curves (note) characteristics curves (note) characteristics curves (note) fig. fig. fig. fig. 8.1 8.1 8.1 8.1 i i i i d d d d - v - v - v - v ds ds ds ds fig. fig. fig. fig. 8.2 8.2 8.2 8.2 i i i i d d d d - v - v - v - v ds ds ds ds fig. fig. fig. fig. 8.3 8.3 8.3 8.3 i i i i d d d d - v - v - v - v gs gs gs gs fig. fig. fig. fig. 8.4 8.4 8.4 8.4 v v v v ds ds ds ds - v - v - v - v gs gs gs gs fig. fig. fig. fig. 8.5 8.5 8.5 8.5 r r r r ds(on) ds(on) ds(on) ds(on) - i - i - i - i d d d d fig. fig. fig. fig. 8.6 8.6 8.6 8.6 r r r r ds(on) ds(on) ds(on) ds(on) - t - t - t - t a a a a (note 7) (note 7) (note 7) (note 7)
2013-10-18 rev.3.0 TPCC8070 6 fig. fig. fig. fig. 8.7 8.7 8.7 8.7 i i i i dr dr dr dr - v - v - v - v ds ds ds ds fig. fig. fig. fig. 8.8 8.8 8.8 8.8 capacitance - v capacitance - v capacitance - v capacitance - v ds ds ds ds fig. fig. fig. fig. 8.9 8.9 8.9 8.9 v v v v th th th th - t - t - t - t a a a a (note 7) (note 7) (note 7) (note 7) fig. fig. fig. fig. 8.10 8.10 8.10 8.10 dynamic input/output characteristics dynamic input/output characteristics dynamic input/output characteristics dynamic input/output characteristics fig. fig. fig. fig. 8.11 8.11 8.11 8.11 p p p p d d d d - t - t - t - t a a a a (note 7) (note 7) (note 7) (note 7) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) fig. fig. fig. fig. 8.12 8.12 8.12 8.12 p p p p d d d d - t - t - t - t c c c c (note 7) (note 7) (note 7) (note 7) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum)
2013-10-18 rev.3.0 TPCC8070 7 fig. fig. fig. fig. 8.13 8.13 8.13 8.13 r r r r th th th th - t - t - t - t w w w w (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) fig. fig. fig. fig. 8.14 8.14 8.14 8.14 safe operating area safe operating area safe operating area safe operating area (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) note: the above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. note 7: although several performance curves are shown up to a t a or t c of 175 , the device is not guaranteed at storage temperatures up to 175 . the storage temperature (t stg ) range is rated at -55 to 150 .
2013-10-18 rev.3.0 TPCC8070 8 package dimensions package dimensions package dimensions package dimensions unit: mm weight: 0.02 g (typ.) package name(s) toshiba: 2-3x1s nickname: tson advance
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