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  ? semiconductor components industries, llc, 2012 november, 2012 ? rev. 4 1 publication order number: mmbta06wt1/d mmbta06w, smmbta06w, driver transistor npn silicon moisture sensitivity level: 1 esd rating: human body model ? 4 kv esd rating: machine model ? 400 v features ? s prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ratings rating symbol value unit collector ? emitter voltage v ceo 80 vdc collector ? base v oltage v cbo 80 vdc emitter ? base v oltage v ebo 4.0 vdc collector current ? continuous i c 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board t a = 25 c p d 150 mw thermal resistance, junction to ambient r  ja 833 c/w junction and storage t emperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting t echniques reference manual, solderrm/d. device package shipping ? ordering information sc ? 70 case 419 style 3 marking diagram collector 3 1 base 2 emitter http://onsemi.com mmbta06wt1g sc ? 70 (pb ? free) 3,000 / tape & reel ? for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd801 1/d. gm m   gm = specific device code m = date code  = pb ? free package 1 (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. smmbta06wt1g sc ? 70 (pb ? free) 3,000 / tape & reel SMMBTA06WT3G sc ? 70 (pb ? free) 10,000 / tape & reel
mmbta06w, smmbta06w, http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 1) (i c = 1.0 madc, i b = 0) v (br)ceo 80 ? vdc emitter ? base breakdown voltage (i e = 100  adc, i c = 0) v (br)ebo 4.0 ? vdc collector cutoff current (v ce = 60 vdc, i b = 0) i ces ? 0.1  adc collector cutoff current (v cb = 80 vdc, i e = 0) i cbo ? 0.1  adc on characteristics dc current gain (i c = 10 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 100 100 ? ? ? collector ? emitter saturation v oltage (i c = 100 madc, i b = 10 madc) v ce(sat) ? 0.25 vdc base ? emitter on voltage (i c = 100 madc, v ce = 1.0 vdc) v be(on) ? 1.2 vdc small ? signal characteristics current ? gain ? bandwidth product (note 2) (i c = 10 ma, v ce = 2.0 v, f = 100 mhz) f t 100 ? mhz 1. pulse test: pulse width 300  s, duty cycle 2.0%. 2. f t is defined as the frequency at which |h fe | extrapolates to unity. figure 1. switching time test circuits output turn-on time -1.0 v v cc +40 v r l * c s  6.0 pf r b 100 100 v in 5.0  f t r = 3.0 ns 0 +10 v 5.0  s output turn-off time +v bb v cc +40 v r l * c s  6.0 pf r b 100 100 v in 5.0  f t r = 3.0 ns 5.0  s *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all v oltage polarities
mmbta06w, smmbta06w, http://onsemi.com 3 figure 2. current ? gain ? bandwidth product figure 3. capacitance figure 4. switching time 100 200 2.0 i c , collector current (ma) 300 200 100 70 50 30 10 100 0.1 v r , reverse voltage (volts) 80 60 40 20 10 8.0 20 v ce = 2.0 v t j = 25 c t j = 25 c 3.0 5.0 7.0 10 20 30 50 70 f t , current-gain - bandwidth product (mh z 50 1.0 2.0 5.0 0.2 0.5 6.0 4.0 c ibo c obo 20 10 i c , collector current (ma) 200 100 50 20 10 100 t, time (ns) 50 200 500 1.0 k 500 v cc = 40 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f t r 5.0 7.0 30 70 300 700 30 70 t d @ v be(off) = 0.5 v c, capacitance (pf) 300 figure 5. active ? region safe operating area 10 1.0 v ce , collector-emitter voltage (volts) 500 200 100 50 20 10 30 i c , collector current (ma) 2.0 5.0 50 1.0 k 1.0 ms 1.0 s t a = 25 c current limit thermal limit second breakdown limit 100 70 20 3.0 7.0 100  s t c = 25 c 700 300 30 70 figure 6. dc current gain 2.0 500 0.5 i c , collector current (ma) 400 200 100 80 60 40 10 , dc current gain t j = 125 c 1.0 3.0 5.0 v ce = 1.0 v 20 100 30 50 200 300 h fe 25 c -55 c figure 7. ?on? voltages 10 500 1.0 i c , collector current (ma) 1.0 0.8 0.6 0.4 0.2 0 100 t j = 25 c v, voltage (volts) v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v 0.5 2.0 5.0 200 20 50
mmbta06w, smmbta06w, http://onsemi.com 4 figure 8. collector saturation region figure 9. base ? emitter t emperature coefficient 100 500 0.5 i c , collector current (ma) -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 0.1 10 0.05 i b , base current (ma) 1.0 0.8 0.6 0.4 0.2 0 1.0 t j = 25 c r vb , temperature coefficient (mv/ c) 10 r  vb for v be  50 i c = 100 ma i c = 50 ma i c = 250 ma i c = 500 ma i c = 10 ma , collector-emitter voltage (volts) v ce 1.0 2.0 5.0 20 50 200 20 2.0 5.0 0.2 0.5
mmbta06w, smmbta06w, http://onsemi.com 5 package dimensions sc ? 70 (sot ? 323) case 419 ? 04 issue n style 3: pin 1. base 2. emitter 3. collector a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028  mm inches  scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting t echniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different a pplications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical e xperts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc prod uct could create a s ituation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney f ees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was neglig ent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mmbta06wt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc a sales representative


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