pnp epitaxial ty transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe classification symbol parameter ratings units v cbo collector-base voltage -35 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -500 ma p c collector power dissipation 150 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units i cbo collector cut-off current v cb = -35v, i e =0 -0.1 a i ebo emitter cut-off current v eb = -5v, i c =0 -0.1 a h fe1 h fe2 dc current gain v ce = -1v, i c = -100ma v ce = -6v, i c = -400ma 70 25 240 v ce (sat) collector-emitter saturation voltage i c = -100ma, i b = -10ma -0.1 -0.25 v v be (on) base-emitter on voltage v ce = -1v , i c = -100ma -0.8 -1.0 v f t current gain bandwidth product v ce = -6v, i c = -20ma 200 mhz c ob output capacitance v cb = -6v, i e = 0, f=1mhz 13 pf classification o y h fe1 70 ~ 140 120 ~ 240 1. base 2. emitter 3. collector ksa1182 low frequency power amplifier ? complement to ksc2859 f10 marking h fe grade sot-23 1 2 3 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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