? 2006 ixys all rights reserved g = gate d = drain s = source tab = drain ds99206e(12/05) polarhv tm power mosfet v dss = 500 v i d25 =26a r ds(on) 230 m ? ? ? ? ? n-channel enhancement mode avalanche rated features l international standard packages l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density to-3p (ixtq) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 230 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gss continuos 30 v v gsm transient 40 v i d25 t c = 25 c26a i dm t c = 25 c, pulse width limited by t jm 78 a i ar t c = 25 c26a e ar t c = 25 c40mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-3p) 1.13/10 nm/lb.in. weight to-3p 6 g to-268 5.5 g plus220 & plus220smd 5 g ixtq 26n50p ixtt 26n50p ixtv 26n50p ixtv 26n50ps g s d (tab) plus220smd (ixtv_s) g s d plus220 (ixtv) d g s d (tab) d (tab) to-268 (ixtt) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 26n50p ixtt 26n50p ixtv 26n50p IXTV26N50Ps symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 24 31 s c iss 3600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 380 pf c rss 48 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 i d25 25 ns t d(off) r g = 4 ? (external) 58 ns t f 20 ns q g(on) 65 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 18 nc q gd 20 nc r thjc 0.31 c/w r thcs 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 26 a i sm repetitive 104 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s 300 ns q rm v r = 100v, v gs = 0 v 3.3 c to-3p (ixtq) outline plus220 (ixtv) outline plus220smd (ixtv_s) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved ixtq 26n50p ixtt 26n50p ixtv 26n50p IXTV26N50Ps fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 22 24 26 01234567 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 036912151821242730 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0246810121416 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 13a value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 26a i d = 13a fig. 5. r ds(on) normalized to i d = 13a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 0 5 10 15 20 25 30 35 40 45 50 55 60 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 26n50p ixtt 26n50p ixtv 26n50p IXTV26N50Ps fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 3.5 4 4.5 5 5.5 6 6.5 7 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50 55 60 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 55 60 65 q g - nanocoulombs v gs - volts v ds = 250v i d = 13a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc 25s 1ms 100s r ds(on) limit 10ms dc
? 2006 ixys all rights reserved to-268 (ixtt) outline ixtq 26n50p ixtt 26n50p ixtv 26n50p IXTV26N50Ps fig. 13. maximum transient thermal resistance 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w
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