0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features 6v reverse blocking capability low saturation voltage - 90mv @ 50ma hfe 50 @ 30 ma i c =150ma continuous absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 500 v collector-emitter voltage v cev 500 v collector-emitter voltage v ceo 450 v emitter-base voltage v ebo 6v emitter-collector voltage v ecv 6v peak pulse current i cm 0.5 a continuous collector current * 1 i c 0.15 base current i b 0.2 a power dissipation @ t a =25 *1 625 mw linear derating factor 5 mw/ power dissipation @ t a =25 *2 806 mw linear derating factor 6.4 mw/ operating and storage temperature range t j :t stg -55to+150 ?junction to ambient *1 r ja 200 /w junction to ambient *2 r ja 155 /w *2 as above measured at t<5secs. *1 for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of 1oz copper, in still air conditions p d p d sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors FMMT459 smd type transistors smd type transistors smd type transistors smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =100a 500 700 v collector-emitter breakdown voltage bv cev i c =10a,0.3v v be -1v 500 700 v collector-emitter breakdown voltage * bv ceo i c =10ma 450 500 v emitter-base breakdown voltage bv ebo i e =100a 6 8.1 v emitter-base breakdown voltage bv ecv i c =1a,0.3v v bc -6v 68.1 v collector-emitter cut-off current i ces v ce =450v 100 na collector-base cut-off current i cbo v cb =450v 100 na emitter-base cut-off current i ebo v eb =5v 100 na i c =30ma,v ce =10v 50 120 i c =50ma,v ce =10v * 70 i c =20ma,i b =2ma 60 75 mv i c =50ma,i b =6ma 70 90 mv base-emitter saturation voltage * v be( sat) i c =50ma,i b =5ma 0.76 0.9 v base-emitter turn on voltage * v be( on) i c =50ma,v ce =10v 0.71 0.9 v transition frequency f t i c =10ma,v ce =20v,f=20mhz 50 mhz output capacitance c obo v cb =20v, f=1mhz 5 pf turn-on time ton i c =50ma, v cc =100v 113 ns turn-off time toff i b1 =5ma, i b2 =10ma 3450 ns * measured under pulsed conditions. pulse width = 300 s; duty cycle 2% h fe static forward current transfer ratio v ce( sat) collector-emitter saturation voltage * marking marking 459 FMMT459 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123
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