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  dimensions in inches and (millimeters) version: a06 abs2 - ABS10 single phase 1.0 amp. glass passivated bridge rectifiers abs 0.006(0.15) 0.002(0.05) detail "a", scale=20/1 0~10 o a 0.006(0.15) 0.002(0.05) 0.033(0.85) 0.026(0.65) 0.20(5.1) 0.193(4.9) 0.056(1.42) 0.048(1.22) 0.059(1.50) max. 0.136(3.45) 0.128(3.25) 0.161(4.1) 0.154(3.9) 0.028(0.7) 0.024(0.6) 0.177(4.5) 0.169(4.3) 0.252(6.4) 0.236(6.0) 0.010(0.25) 0.006(0.15) 0.028(0.7) 0.012(0.3) features  glass passivated junction  ideal for printed circuit board  reliable low cost construc tion utilizing molded plastic technique  high temperature soldering guaranteed: 260 o c / 10 seconds / 0.375? ( 9.5mm ) lead length at 5 lbs., ( 2.3 kg ) tension  small size, simple installation pure tin plated terminal , lead free. leads solderable per mil-std-202, method 208  high surge current capability maximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol abs2 abs4 abs6 abs8 ABS10 units maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v maximum rms voltage v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum average forward rectified current on glass-epoxy p.c.b. on aluminum substrate i (av) 0.8 1.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 30 a maximum instantaneous forward voltage @ 0.4a v f 095 v maximum dc reverse current @ t a =25 o c at rated dc blocking voltage @ t a =125 o c i r 10 150 ua ua typical thermal resistance junction to lead on aluminum substrate on glass-epoxy substrate r jl r ja 25 62.5 80 o c/w operating temperature range t j -55 to +150 o c storage temperature range t stg -55 to +150 o c
r a ting s an d characteristi c cu r ve s (abs 2 thr u ABS10) ambien t temper a ture . ( c) o fig.1- maximum forward current derating curve 60 160 140 100 80 20 average for ward current . (a) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 40 120 sin alumina substrate 50.8mm x 50.8mm soldering land 1mm x 1mm conductor layer 20 mm substrate thickness 0.64mm fig.5- typical forward characteristics instantaneous for ward current . (a) 50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 forward voltage. (v) 10 1 0.1 number of cycles (cycle) fig.3- maximum non-repetitive forward surge current 1 100 10 peak for ward surge current . (a) 35 30 25 20 15 10 5 0 ta=40 c single half sine-wave (jedec method) 1 cycle 10ms 10ms i fsm non-repetitive, sine wave, tj = 25 c before surge current is applied o version: a06 fig.4- typical junction capacitance 1 2 5 10 20 800 100 1000 600 500 400 300 200 100 0 reverse voltage. (v) 200 500 junction cap acitance.(pf) tj=25 c 0 50 0.1 0.5 fig.2- typical reverse characteristics per bridge element 0 20 40 60 80 100 120 140 100 0.01 0.1 1 10 percent of rated peak reverse voltage. (%) tj=100 c 0 instantaneous reverse current .( a) tj=25 c 0 tj=75 c 0


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