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cystech electronics corp. spec. no. : c947j4 issued date : 2014.01.29 revised date : page no. : 1/13 MTB23C04J4 cystek product specification n & p-channel enhancement mode power mosfet MTB23C04J4 n-ch p-ch bv dss 40v -40v i d 5.2a -6.2a features ? low gate charge ? simple drive requirement r dson (typ.) @v gs =(-)10v 20 m 13.3 m r dson (typ.) @v gs =(-)4.5v 28 m 17.8 m ? rohs compliant & halogen-free package equivalent circuit outline absolute maximum ratings (t a =25 c, unless otherwise noted) limits parameter MTB23C04J4 to-252-4l g gate d drain s source symbol n-channel p-channel unit drain-source voltage v ds 40 -40 gate-source voltage v gs 20 20 v continuous drain current @ t c =25 c, v gs =10v(-10v) (note1) 22 -26 continuous drain current @ t c =100c, v gs =10v(-10v) (note1) 15.6 -18.4 continuous drain current @ t a =25 c, v gs =10v(-10v) (note4) 5.2 -6.2 continuous drain current @ t a =70 c, v gs =10v(-10v) (note4) i d 4.2 -5.0 pulsed drain current *1 (note3) i dm 30 -30 a total power dissipation (t c =25 ) (note1) 25 p d 12.5 total power dissipation (t c =100) (note1) total power dissipation (t a =25 ) (note2) 2.4 w p dsm total power dissipation (t a =70 ) (note2) 1.7 operating junction and storage te mperature range tj, tstg -55~+175 c
cystech electronics corp. spec. no. : c947j4 issued date : 2014.01.29 revised date : page no. : 2/13 MTB23C04J4 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 6 thermal resistance, junction-to-ambient, max (note2) 62.5 thermal resistance, junction-to-ambient, max (note4) r th,j-a 90 c/w note : 1 . the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2 oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. the value in any given application de pends on the user?s specific board design. 3 . repetitive rating, pulse width limited by junction temperature t j(max) =175 c. ratings are based on low frequency and low duty cycles to keep initial t j =25 c. 4. when mounted on the minimum pad size recommended (pcb mount), t 10s. n-ch characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 40 - - v gs =0v, i d =250 a v gs(th) 1.0 1.6 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0v - - 1 v ds =32v, v gs =0v i dss - - 10 a v ds =30v, v gs =0v, tj=55 c - 20 28 v gs =10v, i d =5a r ds(on) *1 - 28 38 m v gs =4.5v, i d =4a g fs *1 - 7.9 - s v ds =5v, i d =5a dynamic qg *1 - 10 - qgs *1 - 2.6 - qgd *1 - 2.7 - nc v ds =20v, i d =5a, v gs =10v t d(on) *1 - 14 - tr *1 - 16 - t d(off) *1 - 34 - t f *1 - 22 - ns v ds =20v, i d =1a, v gs =10v, r g =6 ciss - 695 - coss - 57 - crss - 48 - pf v ds =15v, v gs =0v, f=1mhz source-drain diode i s *1 - - 5 i sm *2 - - 30 a v sd *1 - 0.74 1 v i s =1a, v gs =0v trr *1 - 16 - ns qrr *1 - 10 - nc i f =5a, v gs =0, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.pulse width limited by maximum junction temperature.
cystech electronics corp. spec. no. : c947j4 issued date : 2014.01.29 revised date : page no. : 3/13 MTB23C04J4 cystek product specification p-ch characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -40 - - v gs =0v, i d =-250 a v gs(th) -1.0 -1.2 -2.5 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =20v, v ds =0v - - -1 v ds =-32v, v gs =0v i dss - - -10 a v ds =-30v, v gs =0v, tj=55 c - 13.3 20 v gs =-10v, i d =-6a r ds(on) *1 - 17.8 26 m v gs =-4.5v, i d =-5a g fs *1 - 18 - s v ds =-5v , i d =-6a dynamic qg *1 - 38 - qgs *1 - 9.8 - qgd *1 - 11 - nc v ds =-20v, i d =-6a, v gs =-10v t d(on) *1 - 30 - tr *1 - 20 - t d(off) *1 - 100 - t f *1 - 36 - ns v ds =-20v, i d =-1a, v gs =-10v, r g =6 ciss - 2977 - coss - 243 - crss - 201 - pf v ds =-15v, v gs =0v, f=1mhz source-drain diode i s *1 - - -6 i sm *2 - - -30 a v sd *1 - -0.7 -1 v i s =-1a, v gs =0v trr *1 - 24 - ns i f =-6a, v gs =0, di f /dt=100a/ s qrr *1 - 18 - nc note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.pulse width limited by maximum junction temperature. ordering information device package shipping to-252 MTB23C04J4-0-t3-g 2500 pcs / tape & reel (rohs compliant & halogen-free package) environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pc s / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c947j4 issued date : 2014.01.29 revised date : page no. : 4/13 MTB23C04J4 cystek product specification q1, n-ch typical characteristics typical output characteristics 0 5 10 15 20 25 30 012345 v ds , drain-source voltage(v) i d , drain current(a) 4v v gs =3v 10v , 9v , 8v , 7v , 6v , 5 v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =2.5v v gs =3v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =5a r ds( on) @tj=25c : 20m typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =5a
cystech electronics corp. spec. no. : c947j4 issued date : 2014.01.29 revised date : page no. : 5/13 MTB23C04J4 cystek product specification q1, n-ch typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 024681012 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =5a v ds =30v v ds =20v v ds =10v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 1ms 100 s r ds( on) limit t a =25c, tj=175c, v gs =10v r ja =90c/w,single pulse 1s 100ms maximum drain current vs junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 175 t j , junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v r ja =90c/w
cystech electronics corp. spec. no. : c947j4 issued date : 2014.01.29 revised date : page no. : 6/13 MTB23C04J4 cystek product specification q1, n-ch typical characteristics(cont.) typical transfer characteristics 0 5 10 15 20 25 30 012345 v gs , gate-source voltage(v) i d , drain current (a) v ds =5v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =175c t a =25c ja =90c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =90 c/w
cystech electronics corp. spec. no. : c947j4 issued date : 2014.01.29 revised date : page no. : 7/13 MTB23C04J4 cystek product specification q2, p-ch typical characteristics typical output characteristics 0 5 10 15 20 25 30 012345 -v ds , drain-source voltage(v) -i d , drain current (a) -10v ,-9v, -8v,-7v,-6v,-5v,-4v v gs =-2v v gs =-3v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-4.5v v gs =-3v v gs =-10v v gs =-2.5v source drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 02468 -i s , source drain current(a) -v sd , source-drain voltage(v) 10 v gs =0v tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain-source on-state resistance v gs =-10v, i d =-6a r ds( on) @tj=25c : 13.3m typ. -v gs , gate-source voltage(v) r ds(on) , static drain-source on-state resistance(m) i d =-6a
cystech electronics corp. spec. no. : c947j4 issued date : 2014.01.29 revised date : page no. : 8/13 MTB23C04J4 cystek product specification q2, p-ch typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs( th) , threshold voltage(v) i d =-250 a forward transfer admittance vs drain current 0.1 1 10 100 0.01 0.1 1 10 100 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-5v pulsed t a =25c gate charge characteristics 0 2 4 6 8 10 0 6 12 18 24 30 36 42 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-6a v ds =-30v v ds =-20v v ds =-10v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 -i d , drain-source voltage(v) -i d , drain current(a) dc 10ms 100ms 100 s t a =25c, tj=175c, v gs =-10v ja =90c/w, single pulse 1s 1ms maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v r ja =90c/w
cystech electronics corp. spec. no. : c947j4 issued date : 2014.01.29 revised date : page no. : 9/13 MTB23C04J4 cystek product specification q2, p-ch typical characteristics(cont.) typical transfer characteristics 0 5 10 15 20 25 30 012345 -v gs , gate-source voltage(v) -i d , drain current (a) v ds =-5v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( m ax) =175c t a =25c ja =90c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =90c/w
cystech electronics corp. spec. no. : c947j4 issued date : 2014.01.29 revised date : page no. : 10/13 MTB23C04J4 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c947j4 issued date : 2014.01.29 revised date : page no. : 11/13 MTB23C04J4 cystek product specification recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c947j4 issued date : 2014.01.29 revised date : page no. : 12/13 MTB23C04J4 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds ? time(ts min to ts max ) time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c947j4 issued date : 2014.01.29 revised date : page no. : 13/13 MTB23C04J4 cystek product specification to-252 dimension marking: style: pin 1.soure 1 2.gate 1 3.&tab drain 1& drain 2 4. source 2 5. gate 2 4-lead to-252 plastic surface mount package cystek package code: j4 b23 c04 device name date code tab inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.0866 0.0945 2.20 2.40 e 0.2520 0.2677 6.40 6.80 a1 0.0000 0.0059 0.00 0.15 e1 0.1500 - 3.81 - b 0.0157 0.0236 0.40 0.60 e 0.0500 ref 1.27 ref b2 0.0199 0.0315 0.50 0.80 f 0.0157 0.0236 0.40 0.60 b3 0.2047 0.2165 5.20 5.50 h 0.3701 0.4016 9.40 10.20 c2 0.0177 0.0217 0.45 0.55 l 0.0551 0.0697 1.40 1.77 d 0.2126 0.2283 5.40 5.80 l1 0.0945 0.1181 2.40 3.00 d1 0.1799 - 4.57 - l4 0.0315 0.0472 0.80 1.20 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead : pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .

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