sot-363 plastic-encapsulate transistors MMDT5451 dual transistor (npn+pnp) features z epitaxial planar die construction z ideal for low power amplification and switching z one 5551(npn), one 5401(pnp) mrking:knm maximum ratings npn 5551 (t a =25 unless otherwise noted) electrical characteristics npn 5551 (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 180 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 160 v emitter-base breakdown voltage v (br)ebo i e =10 a,i c =0 6 v collector cut-off current i cbo v cb =120v,i e =0 0.05 a emitter cut-off current i ebo v eb =4v,i c =0 0.05 a h fe1 v ce =5v,i c =1ma 80 h fe2 v ce =5v,i c =10ma 10 0 30 0 dc current gain h fe3 v ce =5v,i c =50ma 30 i c =10ma, i b =1ma 0.15 v collector-emitter saturation voltage v ce(sat) i c =50ma, i b =5ma 0.2 v i c =10ma, i b =1ma 1 v base-emitter saturation voltage v be(sat) i c =50ma, i b =5ma 1 v output capacitance c obo v cb = 10v, f = 1.0mhz, i e = 0 6.0 pf current gain-bandwidth product f t v ce = 10v, i c = 10ma, f = 100mhz 100 300 mhz noise figure nf v ce = 5.0v, i c = 200 a, r s = 1.0k , f = 1.0khz 8.0 db symbol parameter value units v cbo collector- base voltage 180 v v ceo collector-emitter voltage 160 v v ebo emitter-base voltage 6 v i c collector current -continuous 0.2 a p c collector power dissipation 0.2 w r ja thermal resistance, junction to ambient 625 /w t j junction temperature 150 t stg storage temperature -55-150 sot-363 e1, b1, c1 = pnp 5401 e2, b2, c2 = npn 5551 e1 b 1 c2 c1 b2 e2 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
maximum ratings pnp 5401 (t a =25 unless otherwise noted) electrical characteristics pnp 5401 (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =-100 a,i e =0 -160 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -150 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-120v,i e =0 -50 na emitter cut-off current i ebo v eb =-3v,i c =0 -50 na h fe1 v ce =-5v,i c =-1ma 50 h fe2 v ce =-5v,i c =-10ma 10 0 30 0 dc current gain h fe3 v ce =-5v,i c =-50ma 50 i c =-10ma, i b =-1ma -0.2 v collector-emitter saturation voltage v ce(sat) i c =-50ma, i b =-5ma -0.5 v i c =-10ma, i b =-1ma -1 v base-emitter saturation voltage v be(sat) i c =-50ma, i b =-5ma -1 v output capacitance c obo v cb =-10v, f = 1.0mhz, i e = 0 6.0 pf current gain-bandwidth product f t v ce =-10v, i c =-10ma, f = 100mhz 100 300 mhz noise figure nf v ce =-5.0v, i c =-200 a, r s = 10 , f = 1.0khz 8.0 db symbol parameter value units v cbo collector- base voltage -160 v v ceo collector-emitter voltage -150 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.2 a p c collector power dissipation 0.2 w r ja thermal resistance, junction to ambient 625 /w t j junction temperature 150 t stg storage temperature -55-150 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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