, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MJ900 - mj901 pnp mj1000 - mj1001 npn complementary power darlingtons the MJ900, mj901, mj1000 and mj1001 are silicon epitaxial-bas transistors in monolithic darlington configuration, and are mounted in jedec to-3 metal case. they are intended for use in power linear and switching applications. pnp types are the MJ900 and mj901, and their complementary npn types are the mj1000 and mj1001 respectively. absolute maximum ratings symbol vcbo vceo vebo ic ratings MJ900 collector-base voltage , i mj1001 MJ900 collector-emittervoltage ; ib=0 ; mj901 ! mj1001 MJ900 emitter-base voltage jmppp mj901 mj1001 MJ900 collector current ' |c(rm8) mj901 mj1001 value 60 80 60 80 5.0 8.0 unit vdc vdc vdc adc nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors entourages customers to verity that datasheets are current before placing orders. quality semi-conductors
MJ900 - mj901 pnp mj1000 - mj1001 npn symbol ib pt tj ts ratings MJ900 ba- current ..jjww mj1001 i @ tc < 25 MJ900 power dissipation '??- t - i j^l^ k derate above mj901 25c mj1001 MJ900 junction temperature mj901 mj1001 MJ900 storage temperature mj901 mj1001 value 0.1 90 0.515 -65 to +200 unit adc watts w/c c thermal characteristics symbol rthj-c ratings MJ900 thermal resistance, junction to case . ? . mjyui mj1001 value 1.94 unit c/w electrical characteristics tc=25c unless otherwise noted symbol vceo i,. ? iceo ratings collector-emitter breakdown voltage (*) collector cutoff current test condition(s) MJ900 mj1000 lc=100 madc, ib=0 mj901 mj1001 vce=30vdc,,b=0 jjiji", vce=40vdc,,e=0 ijjjij, min 60 80 - - typ - - - mx - kflf) unit vdc
MJ900 - mj1000 mj901 pnp -mj1001 npn symbol iebo icer v . ce(sat) ratings test condition(s) i i MJ900 emitter cutoff current \ . ,?,,.?. n |mj1000 vbe=5.0 vdc, lc=0 : mj901 ; mj1001 vcb=60 v, rbe=1 .0 k ohm ujj jiqoo collector-emitter leakage vcb=80 v, rbe=1.0 k ohm | mj1q01 current vcb=60 v, rbe=1 .0 k ohm, MJ900 tc=150c mj1000 i vcb=80 v, rbe=1 .0 k ohm, | mj901 jtc=150c |mj1001 i MJ900 . ! lc=3.0 a, ib=12 madc mj1000 collector-emitter saturation dm??* , , .. ,a, ; mj1uu1 j MJ900 lc=8.0 a, ib=40 madc ? mj901 mj1001 min - - _ - - typ - - _ - - mx 2.0 1.0 5.0 2.0 4.0 unit madc madc \/hn symbol vf vbe fe ratings test condition(s) MJ900 forward voltage (pulse mj1000 method) | f i mj901 i i mj1001 MJ900 base-emitter voltage (*) , .... .. , ?.. . mj1000 :lc=3.0adc,vce=3.0vdc |mj9q1 ! mj1001 MJ900 vce=3.0 vdc, lc=3.0 adc i ?????. hp piirrant pain t*\ l_!y:__?_::_r_j, uo current bain ( ) mjqqq i vce=3.0 vdc, lc=4.0 adc | jjjjjj imj1001 min - - 1000 750 typ 1.8 - - - mx - 2.5 - - unit v v (*) pulse width ? 300 ^s, duty cycle z 2.0%
MJ900 - mj901 pnp mj1000-mj1001 npn mechanical data case to-3 dimensions a b c d e g h l m n p mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 pin 1 : pin 2: case : base emitter collector v y - ? l
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