advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower gate charge r ds(on) 300m fast switching characteristic i d 4.4a halogen free & rohs compliant product description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 10 /w rthj-a 62 /w data and specifications subject to change without n otice total power dissipation operating junction temperature range 2 storage temperature range -55 to 150 -55 to 150 total power dissipation 12.5 continuous drain current, v gs @ 10v 2.8 pulsed drain current 1 12 gate-source voltage + 20 continuous drain current, v gs @ 10v 4.4 parameter rating drain-source voltage 100 201110071 1 AP09T10GP-HF halogen-free product maximum thermal resistance, junction-ambient thermal data parameter g d s g d s to-220(p) advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device desi gn, low on- resistance and cost-effectiveness. the to-220 package is widely preferred for commercial-indu strial power applications and suited for low voltage applications such a s dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =3a - - 300 m v gs =4.5v, i d =1.5a - - 600 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =3a - 3 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =3a - 5.5 8.8 nc q gs gate-source charge v ds =80v - 1.2 - nc q gd gate-drain ("miller") charge v gs =10v - 2.2 - nc t d(on) turn-on delay time v ds =50v - 6.5 - ns t r rise time i d =3a - 8 - ns t d(off) turn-off delay time r g =3.3 - 10 - ns t f fall time v gs =10v - 3 - ns c iss input capacitance v gs =0v - 190 300 pf c oss output capacitance v ds =25v - 30 - pf c rss reverse transfer capacitance f=1.0mhz - 20 - pf r g gate resistance f=1.0mhz 1 2 4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =3a, v gs =0v - - 1.3 v t rr reverse recovery time i s =3a, v gs =0 v , - 31 - ns q rr reverse recovery charge di/dt=100a/s - 47 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 AP09T10GP-HF
AP09T10GP-HF fig 1. typical output characteristics fig 2. typical output characteristics total power dissipation fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 2 4 6 8 10 0 2 4 6 8 10 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 2 4 6 8 0 2 4 6 8 10 12 14 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =3a v g =10v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 200 300 400 500 600 700 2 4 6 8 10 v gs gate-to-source voltage (v) r ds(on) (m ? ) i d =1.5a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) i d =250ua
AP09T10GP-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs total power dissipation fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. case temperature 4 0 2 4 6 8 10 12 0 2 4 6 8 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 80 v i d = 3 a 0 100 200 300 400 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 1 2 3 4 5 6 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a)
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