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this is information on a product in full production. january 2013 doc id 023509 rev 2 1/18 18 stf1n105k3, STFW1N105K3, stp1n105k3 n-channel 1050 v, 8 typ., 1.4 a supermesh3? power mosfet in to-220fp, to-3pf and to-220 packages datasheet ? production data features gate charge minimized extremely large avalanche performance 100% avalanche tested very low intrinsic capacitance applications switching applications description these supermesh3? power mosfets are the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. figure 1. internal schematic diagram order codes v ds r ds(on) max i d p tot stf1n105k3 1050 v 11 1.4 a 20 w STFW1N105K3 stp1n105k3 60 w 1 2 3 to-220 1 2 3 tab to-220fp 1 1 1 1 2 3 to-3pf $0y ' * 6 table 1. device summary order codes marking package packaging stf1n105k3 1n105k3 to-220fp tube STFW1N105K3 to-3pf stp1n105k3 to-220 www.st.com
contents stf1n105k3, STFW1N105K3, stp1n105k3 2/18 doc id 023509 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
stf1n105k3, STFW1N105K3, stp1n105k3 electrical ratings doc id 023509 rev 2 3/18 1 electrical ratings . table 2. absolute maximum ratings symbol parameter value unit to-220fp to-3pf to-220 v ds drain source voltage 1050 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 1.4 (1) 1. limited by maximum junction temperature. 1.4 a i d drain current (continuous) at t c = 100 c 0.9 (1) 0.9 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 5.6 (1) 5.6 a p tot total dissipation at t c = 25 c 20 60 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 1.2 a e as single pulse avalanche energy (starting t j = 25 c, i d =i iar , v dd = 50 v) 130 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; tc = 25 c) 2500 3500 v dv/dt (3) 3. i sd 1.4 a, di/dt 100 a/ s, v dd = 80% v (br)dss , v ds peak v (br)dss. peak diode recovery voltage slope 6 v/ns t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit to-220fp to-3pf to-220 rthj-case thermal resistance junction-case max 6.25 2.08 c/w rthj-amb thermal resistance junction-amb max 62.50 50 62.50 c/w
electrical characteristics stf1n105k3, STFW1N105K3, stp1n105k3 4/18 doc id 023509 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 1050 v i dss zero gate voltage drain current (v gs = 0) v ds = 1050 v, v ds = 1050 v, tc=125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 50 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a234.5v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 0.6 a 8 11 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 - 180 - pf c oss output capacitance 15 pf c rss reverse transfer capacitance 1pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 840 v -11-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -7-pf r g intrinsic gate resistance f = 1 mhz open drain - 18 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 840 v, i d = 1.2 a v gs =10 v (see figure 18 ) - 13 1.6 8 - nc nc nc
stf1n105k3, STFW1N105K3, stp1n105k3 electrical characteristics doc id 023509 rev 2 5/18 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 525 v, i d = 0.6 a, r g =4.7 , v gs =10 v (see figure 20 ) - 6 7 27 50 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) - 1.4 5.6 ma a v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 1.2 a, v gs =0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.2 a, v dd = 60 v di/dt = 100 a/ s, (see figure 19 ) - 244 1 9 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.2 a,v dd = 60 v di/dt=100 a/ s, tj=25 c (see figure 19 ) - 330 1.3 8 ns c a
electrical characteristics stf1n105k3, STFW1N105K3, stp1n105k3 6/18 doc id 023509 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp and to-3pf figure 3. thermal impedance for to-220fp and to-3pf figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 figure 6. output characteristics figure 7. transfer characteristics , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5'6rq ?v ?v pv pv 7m ?& 7f ?& 6lqjoh sxovh $0y , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v ?v pv pv 7m ?& 7f ?& 6lqjoh sxovh $0y , ' 9 '6 9 $ 9 9 9 9 *6 $0y , ' 9 *6 9 $ 9 '6 9 $0y
stf1n105k3, STFW1N105K3, stp1n105k3 electrical characteristics doc id 023509 rev 2 7/18 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature 9 *6 4 j q& 9 9 '' 9 , ' $ 9 '6 9 '6 9 $0y 5 '6rq , ' $ 2kp 9 *6 9 $0y & 9 '6 9 s) &lvv &rvv &uvv $0y ( rvv 9 '6 9 ?- $0y 9 *6wk 7 - ?& qrup , ' ?$ $0y 5 '6rq 7 - ?& qrup 9 *6 9 , ' $ $0y
electrical characteristics stf1n105k3, STFW1N105K3, stp1n105k3 8/18 doc id 023509 rev 2 figure 14. source-drain diode forward characteristics figure 15. normalized b vdss vs temperature figure 16. maximum avalanche energy vs starting tj 9 6' , 6' $ 9 7 - ?& 7 - ?& 7 - ?& $0y %9 '66 7 - ?& qrup , ' p$ $0y ( $6 7 - ?& p- , ' $ 9 '' 9 $0y
stf1n105k3, STFW1N105K3, stp1n105k3 test circuits doc id 023509 rev 2 9/18 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stf1n105k3, STFW1N105K3, stp1n105k3 10/18 doc id 023509 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack ? is an st trademark.
stf1n105k3, STFW1N105K3, stp1n105k3 package mechanical data doc id 023509 rev 2 11/18 table 8. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stf1n105k3, STFW1N105K3, stp1n105k3 12/18 doc id 023509 rev 2 figure 23. to-220fp drawing 7012510_rev_k_b
stf1n105k3, STFW1N105K3, stp1n105k3 package mechanical data doc id 023509 rev 2 13/18 table 9. to-3pf mechanical data dim. mm min. typ. max. a 5.30 5.70 c 2.80 3.20 d 3.10 3.50 d1 1.80 2.20 e 0.80 1.10 f 0.65 0.95 f2 1.80 2.20 g 10.30 11.50 g1 5.45 h 15.30 15.70 l 9.80 10 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n 1.80 2.20 r 3.80 4.20 dia 3.40 3.80
package mechanical data stf1n105k3, STFW1N105K3, stp1n105k3 14/18 doc id 023509 rev 2 figure 24. to-3pf drawing l3 l dia l2 a c d d1 e h l5 l4 r n l6 l7 f(3x) f2(3x) g1 g 7627132_c
stf1n105k3, STFW1N105K3, stp1n105k3 package mechanical data doc id 023509 rev 2 15/18 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stf1n105k3, STFW1N105K3, stp1n105k3 16/18 doc id 023509 rev 2 figure 25. to-220 type a drawing 0015988_typea_rev_s
stf1n105k3, STFW1N105K3, stp1n105k3 revision history doc id 023509 rev 2 17/18 5 revision history table 11. document revision history date revision changes 13-aug-2012 1 first release. 23-jan-2013 2 added device in to-3pf.
stf1n105k3, STFW1N105K3, stp1n105k3 18/18 doc id 023509 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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