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| to ? 92s 1. emitter 2. collector 3. base to-92s plastic-encapsulate transistors 2SC3330 transistor (npn) features z large current capacity and wide aso maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 10a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 6 v collector cut-off current i cbo v cb =40v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =6v, i c =1ma 100 800 dc current gain h fe(2) v ce =6v, i c =0.1ma 70 collector-emitter saturation voltage v ce(sat) i c =100ma,i b =10ma 0.3 v base-emitter saturation voltage v be(sat) i c =100ma,i b =10ma 1 v collector output capacitance c ob v cb =6v,i e =0, f=1mhz 3 pf transition frequency f t v ce =6v,i c =10ma 200 mhz classification of h fe(1) rank r s t u v range 100-200 140-280 200-400 280-560 400-800 symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 6 v i c collector current 200 ma p c collector power dissipation 300 mw r ja thermal resistance from junction to ambient 417 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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