new product 0.08 (2.032) 0.24 (6.096) 0.42 (10.66) 0.63 (17.02) 0.12 (3.05) 0.33 (8.38) mounting pad layout to-263ab 0.380 (9.65) 0.411 (10.45) 0.320 (8.13) 0.360 (9.14) 0.591 (15.00) 0.624 (15.85) 1 2 0.245 (6.22) min k k 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.014 (0.36) 0.021 (0.53) 0.110 (2.79) 0.140 (3.56) 0.090 (2.29) 0.110 (2.79) 0.047 (1.19) 0.055 (1.40) pin 1 pin 2 k - heatsink 0-0.01 (0-0.254) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 1 3 pin 2 0.060 (1.52) 0.405 (10.27) 0.383 (9.72) 0.191 (4.85) 0.171 (4.35) 0.600 (15.5) 0.580 (14.5) 0.560 (14.22) 0.530 (13.46) 0.037 (0.94) 0.027 (0.69) 0.140 (3.56) 0.130 (3.30) 0.350 (8.89) 0.330 (8.38) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.131 (3.39) 0.122 (3.08) 0.110 (2.80) 0.100 (2.54) 0.022 (0.55) 0.014 (0.36) dia. dia. 0.676 (17.2) 0.646 (16.4) 0.205 (5.20) 0.195 (4.95) 0.105 (2.67) 0.095 (2.41) pin 2 pin 1 pin 3 ito-220ab (mbrf25hxxct) t o-220ab (mbr25hxxct) dimensions in inches and (millimeters) t o-263ab (mbrb25hxxct) 123 pin 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) case 1.148 (29.16) 1.118 (28.40) pin 2 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.160 (4.06) 0.140 (3.56) 0.410 (10.41) 0.390 (9.91) 0.635 (16.13) 0.625 (15.87) 0.415 (10.54) max. 0.370 (9.40) 0.360 (9.14) pin 1 pin 3 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.205 (5.20) 0.195 (4.95) 0.105 (2.67) 0.095 (2.41) mechanical data case: jedec to-220ab, ito-220ab & to-263ab molded plastic body t erminals: plated leads, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250 ?/10 seconds, 0.25" (6.35 mm) from case p olarity: as marked mounting position: any mounting torque: 10 in-lbs maximum w eight: 0.08 oz., 2.24 g features ?plastic package has underwriters laboratory flammability classification 94 v-0 ?dual rectifier construction, positive center tap ?metal silicon junction, majority carrier conduction ?low forward voltage drop, low power loss and high efficiency ?guardring for overvoltage protection ?for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ?rated for reverse surge and esd ?175 ? maximum operation junction temperature mbr25hxxct, mbrf25hxxct & mbrb25hxxct series vishay semiconductors fo r merly general semiconductor document number 88789 www.vishay.com 7-may-03 1 dual high-voltage schottky rectifiers reverse voltage 35 to 60 v forward current 30 a
mbr25hxxct, mbrf25hxxct & mbrb25hxxct series vishay semiconductors fo r merly general semiconductor www.vishay.com document number 88789 2 7-may-03 maximum ratings (t c = 25? unless otherwise noted) p arameter symbol mbr25h35ct mbr25h45ct mbr25h50ct mbr25h60ct unit maximum repetitive peak reverse voltage v rrm 35 45 50 60 v wo r king peak reverse voltage v rwm 35 45 50 60 v maximum dc blocking voltage v dc 35 45 50 60 v max. average forward rectified current t otal device 30 (see fig. 1) per leg i f(av) 15 a p eak repetitive forward current at t c = 150? (rated v r , 20khz sq. wave) i frm 30 a non-repetitive avalanche energy per leg at 25 c, i as = 4a, l = 10mh e as 80 mj p eak forward surge current 8.3ms single half sine-wave i fsm 150 a superimposed on rated load (jedec method) per leg p eak repetitive reverse surge current per leg at t p = 2.0 s, 1kh z i rrm 1.0 0.5 a p eak non-repetitive reverse energy (8/20 s waveform) e rsm 25 20 mj electrostatic discharge capacitor voltage v c 25 kv human body model: c = 100pf, r = 1.5k ? v oltage rate of change (rated v r ) dv/dt 10,000 v/ s operating junction temperature range t j 65 to +175 ? storage temperature range t stg 65 to +175 ? rms isolation voltage (mbrf type only) from terminals 4500 (1) to heatsink with t = 1.0 second, rh 30% v isol 3500 (2) v 1500 (3) electrical characteristics (t c = 25? unless otherwise noted) p arameter symbol mbr25h35ct, mbr25h45ct mbr25h50ct, mbr25h60ct unit ty p m a x ty p m a x maximum instantaneous at i f = 15a t j = 25? 0.64 0.70 f orward voltage per leg (4) at i f = 15a t j = 125? v f 0.50 0.54 0.56 0.60 v at i f = 30a t j = 25? 0.74 0.85 at i f = 30a t j =125? 0.63 0.67 0.68 0.72 maximum instantaneous reverse current t j = 25? 100 100 a at rated dc blocking voltage per leg (4) t j =125? i r 6.0 20 4.0 20 ma thermal characteristics (t c = 25? unless otherwise noted) p arameter symbol mbr mbrf mbrb unit thermal resistance from junction to case per leg r jc 1.5 4.5 1.5 ?/w notes: (1) clip mounting (on case), where lead does not overlap heatsink with 0.110?offset (3) screw mounting with 4-40 screw, where w asher diameter is 4.9 mm (0.19? (2) clip mounting (on case), where leads do overlap heatsink (4) pulse test: 300 s pulse width, 1% duty cycle ordering information product case package code package option mbr25h35ct ?mbr25h60ct to-220ab 45 anti-static tube, 50/tube, 2k/carton mbrf25h35ct ?mbrf25h60ct ito-220ab 45 anti-static tube, 50/tube, 2k/carton 31 13 reel, 800/reel, 4.8k/carton mbrb25h35ct ?mbrb25h60ct to-263ab 45 anti-static tube, 50/tube, 2k/carton 81 anti-static 13 reel, 800/reel, 4.8k/carton
mbr25hxxct, mbrf25hxxct & mbrb25hxxct series vishay semiconductors fo r merly general semiconductor document number 88789 www.vishay.com 7-may-03 3 110 100 0 25 50 75 100 125 150 fig. 3 ?typical instantaneous forward characteristics per leg fig. 5 ?typical junction capacitance per leg fig. 6 ?typical transient thermal impedance per leg number of cycles at 60 h z reverse voltage (v) p eak forward surge current (a) 0 10 20 30 40 025 50 75 100 125 150 175 fig. 1 ?forward current derating curve av erage forward current (a) case temperature ( c) fig. 2 ?maximum non-repetitive p eak forward surge current per leg 0.01 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 10 100 instantaneous forward voltage (v) instantaneous forward current (a) fig. 4 ?typical reverse characteristics per leg instantaneous reverse leakage current (ma) p ercent of rated peak reverse voltage (%) t, pulse duration (sec.) tr anseint thermal impedance ( c/w) pf - junction capacitance 020 60 40 100 80 0.0001 0.001 0.1 0.01 1 10 100 0.1 1 100 10 1000 100 10000 0.01 0.1 0.1 1 1 10 10 mbr25h35ct -- mbr25h45ct mbr25h50ct -- mbr25h60ct t j = 150 c t j = 125 c t j = 25 c t j = t j max. 8.3ms single half sine-wave (jedec method) t j = 25 c f = 1.0 mh z vsig = 50mvp-p t j = 150 c t j = 125 c t j = 25 c mbr25h35ct -- mbr25h45ct mbr25h50ct -- mbr25h60ct mbr25h35ct -- mbr25h45ct mbr25h50ct -- mbr25h60ct mbrf mbr, mbrb ratings and characteristic curves (t a = 25? unless otherwise noted)
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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