? 2010 ixys corporation, all rights reserved ds100249(03/10) v dss = 500v i d25 = 52a r ds(on) 120 m t rr(typ) = 400 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c52a i dm t c = 25 c, pulse width limited by t jm 150 a i a t c = 25 c52a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss ,t j 150 c 10 v/ns p d t c = 25 c 960 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 5.5 g IXTQ480P2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 5 a t j = 125 c 50 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 120 m polarp2 tm power mosfet features z avalanche rated z fast intrinsic diode z dynamic dv/dt rated z low package inductance advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls advance technical information g = gate d = drain s = source tab = drain to-3p g d s tab
ixys reserves the right to change limits, test conditions, and dimensions. IXTQ480P2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 30 48 s c iss 6800 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 680 pf c rss 44 pf t d(on) 22 ns t r 11 ns t d(off) 40 ns t f 8 ns q g(on) 108 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 37 nc q gd 38 nc r thjc 0.13 c /w r thcs 0.25 c /w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 52 a i sm repetitive, pulse width limited by t jm 204 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 400 ns ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. i f = 26a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4 - drain
|
