1 n-channel 20-v (d-s) mosfet fe atu res ? halo gen-free ? tren chfet ? power mosfet appli cations ? load sw itches for portable devices no tes : a. package limited, t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 95 c/w. e. see reliability manual for profile. the chipfet is a leadless package. the end of t he lead terminal is exposed copper (not pl ated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. product summary v ds (v) r ds(on) ( ) i d (a ) a q g (t yp.) 20 0.033 at v gs = 4.5 v 6.8 10 nc 0.045 at v gs = 2.5 v 6.8 n - c hannel m os fet g d s ab solute ma ximum ratings t a = 25 c, unless otherwise noted p arameter symbol limit unit dr a i n-s ource voltage v ds 20 v gate-sou rce v oltage v gs 12 con tinuous drain current (t j = 150 c) t c = 2 5 c i d 6.8 a a t c = 7 0 c 6 a t a = 25 c 6.8 a, b , c t a = 70 c 6 a, b , c pulsed drain current i dm 30 con tinuous source-drain diode current t c = 2 5 c i s 5.2 t a = 25 c 2.1 b, c maxim um po wer dissipation t c = 2 5 c p d 6.3 w t c = 7 0 c 4 t a = 25 c 2.5 b, c t a = 70 c 1.6 b, c oper ating junction and stor age temperature range t j , t stg - 55 to 150 c soldering recommendations (p eak temperature) e, f 260 thermal res ist ance ratings p aram eter s y mbo l typical maximum u nit ma ximum junction-to-ambient a, c , d t 5 s r th ja 40 50 c/w maxim um j unction-to-foot (drain) steady state r th jf 15 20 rohs compliant d g s d dt c2058 www.din-tek.jp
2 no te s: a. p ulse test; pulse width d 300 s, duty cycle d 2 % b. guaranteed by design, not s ubject to production testing. st resses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecifications t j = 25 c, unless otherwise noted p arame ter s ymbol t est c onditions min. typ. max. unit static drain-source breakdo wn v oltage v ds v gs = 0 v , i d = 250 a 20 v v ds t emperature coefficient ' v ds /t j i d = 250 a 25 mv/c v gs( th) t emperature co efficient ' v gs( th) /t j - 4. 0 gate-so urce threshold voltage v gs( th) v ds = v gs , i d = 250 a 0.6 1.5 v gate-source leakage i gss v ds = 0 v , v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 20 v , v gs = 0 v 1 a v ds = 20 v , v gs = 0 v , t j = 55 c 10 on-state dr ain current a i d(on) v ds t 5 v , v gs = 4.5 v 30 a drain-source on-state resista nce a r ds( on ) v gs 4.5 v , i d = 8.3 a 0.026 0.033 : v gs 2.5 v , i d = 4.5 a 0.030 0.045 forward transconductance a g fs v ds = 10 v , i d = 8.3 a 45 s dy nami c b inpu t capacitance c iss v ds = 10 v , v gs = 0 v , f = 1 mhz 1200 pf output capacitance c os s 220 re verse transfer capacitance c rs s 100 t otal gate charge q g v ds = 10 v , v gs = 10 v , i d = 8.3 a 22 33 nc v ds = 10 v , v gs = 4.5 v , i d = 8.3 a 10 15 gate-so urce charge q gs 2.5 gate- dra in charge q gd 1.7 g ate resistance r g f = 1 mhz 2.4 : tur n -on delay time t d( on) v dd = 10 v , r l = 1.5 : i d # 6.7 a, v gen = 4.5 v , r g = 1 : 15 25 ns rise time t r 10 15 t ur n -off delay time t d( off) 35 55 fal l time t f 12 20 tur n-on delay time t d( on) v dd = 10 v , r l = 1.5 : i d # 6.7 a, v gen = 10 v , r g = 1 : 10 15 rise time t r 12 20 tur n-off delay time t d( off) 25 40 fal l time t f 10 15 drain - so ur ce body diode characteristics continuous source-drain diode current i s t c = 25 c 5.2 a pulse diode f orw ard current i sm 30 body diode v oltage v sd i s = 6.7 a, v gs = 0 v 0.8 1.2 v body diode re verse recovery time t rr i f = 6.7 a, di /dt = 100 a/s, t j = 25 c 20 40 ns body diode re v erse recovery charge q rr 10 20 nc re verse recovery fall time t a 10 ns re verse reco v ery rise time t b 10 ' 7 & z z z g l q w h n m s
3 typica l c har ac teri stics 25 c, unless otherwise noted output charact eristics on-resistance vs. drain current gate charge 0 6 12 1 8 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs = 5 thr u 2.5 v v gs = 1.5 v v gs = 2 v v gs = 1 v 0.010 0.012 0.014 0.016 0.01 8 0.020 0.022 0.024 0 6 12 1 8 24 30 r ds(on) - on-resistance ( ) i d - drain c u rrent (a) v gs =4.5 v v gs =2.5 v 0.026 0 2 4 6 8 10 0 5 10 15 20 25 i d = 6. 3 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 16 v v ds = 10 v transfer characteristics capac itance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c c rss 0 300 600 900 1200 1500 0 5 10 15 20 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) v gs = 4.5 v , 2.5 v i d = 6. 3 a dt c2058 www.din-tek.jp
4 ty pi cal ch ara cteristics 25 c, unless otherwise noted source-drain diod e f orward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c 10 v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 100 t j = 25 c 0.4 0.6 0. 8 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resista n ce vs. gate-to-so urce vol tage single pulse power 0.000 0.010 0.020 0.030 0.040 0.050 012345 - on-resistance ( ) r ds(on) v gs - gate-to- so u rce v oltage ( v ) t j = 25 c t j = 125 c i d = 6 .3 a 0 40 5 0 10 20 ) w ( r e w o p time ( s ) 1 600 0.1 0.01 0.001 10 100 30 safe operating area, ju nction-to-ambient v ds - drain-to- so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 i d - drain c u rrent (a) 0.1 t a = 25 c single p u lse b v dss limited limited b yr ds(on) * 1s 10 s dc 1ms 100 s 10 ms 100 ms dt c2058 www.din-tek.jp
5 typica l c har ac teri stics 25 c, unless otherwise noted * the power dissipat ion p d is based on t j(max) = 150 c, using junctio n-to-case th ermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 3 6 9 12 15 1 8 0 25507 5 100125150 t c - case temperat u re (c) i d - drain c u rrent (a) package limited power deratin g 0 2 4 6 8 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) dt c2058 www.din-tek.jp
6 ty pi cal ch ara cteristics 25 c, unless otherwise noted normalized therma l trans ient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) i t c e f f 1. d u ty cycle, d = 2. per unit base = r thja = 8 0 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized t h ermal transient impedance, junction-to-foot 10 -3 10 -2 10 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) v i t c e f f e d e z i l a m r o n t n e i s n a r t e e c n a d e p m i l a m r e h t single p u lse 1 dt c2058 www.din-tek.jp
1 package outline - sot89 no te: con trolling dimensions are in millimeters. ap proximate dimensions are provided in inches d i m millimeters inches dim millimeters inches min max min max min max min max a 1.40 1.60 0.550 0.630 e 2.29 2.60 0.090 0.102 b 0.44 0.56 0.017 0.022 e1 2.13 2.29 0.084 0.090 b1 0.36 0.48 0.014 0.019 e 1.50 bsc 0.059 bsc c 0.35 0.44 0.014 0.017 e1 3.00 bsc 0.118 bsc d 4.40 4.60 0.173 0.181 h 3.94 4.25 0.155 0.167 d1 1.62 1.83 0.064 0.072 l 0.89 1.20 0.035 0.047 d1 d a c b1 l e h e1 b e e1 3 d f n d j h , q i r u p d w l r q www.din-tek.jp
1 disclaimer all pro duct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
|
