b-12 01/99 2n4340, 2n4341 n-channel silicon junction field-effect transistor small signal amplifiers current regulators voltage-controlled resistors absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 50 v continuous forward gate current 50 ma continuous device power dissipation 300 mw power derating (to 175c) 2mw/c toe18 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate & case surface mount smp4340, SMP4341 at 25c free air temperature: 2n4340 2n4341 process nj16 static electrical characteristics min max min max unit test conditions gate source breakdown voltage v (br)gss C 50 C 50 v i g = C 1 a, v ds = ?v gate reverse current i gss C 100 C 100 pa v gs = C 30 v, v ds = ?v C 100 C 100 na v gs = C 30 v, v ds = ?v t a = 150c gate source cutoff voltage v gs(off) C 1C 3C 2C 6 v v ds = 15 v, i d = 0.1 a drain saturation current (pulsed) i dss 1.2 3.6 3 9 ma v ds = 15 v, v gs = ? v drain cutoff current i d(off) 0.05 0.07 na v ds = 15 v, v gs = ( ) (C 5) (C 10) v dynamic electrical characteristics drain source on resistance r ds(on) 1500 800 v gs = ? v, i d = ? a f = 1 khz common source g fs 1300 3000 2000 4000 s v ds = 15 v, v gs = ? v f = 1 khz forward transconductance common source output conductance g os 30 60 s v ds = 15 v, v gs = ? v f = 1 khz common source input capacitance c iss 77pfv ds = 15 v, v gs = ? v f = 1 mhz common source c rss 33pfv ds = 15 v, v gs = ? v f = 1 mhz reverse transfer capacitance noise figure nf 1 1 db v ds = 15 v, v gs = ? v f = 1 khz r g = 1 m , bw = 200 hz 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-12
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