-/ cx , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 PMD18D100 mechanical data dimensions in mm npn darlington power transistor *....* l to3 package. case is collector. features ? to3 package ? 100v ? 100apeak ? 300 watts description the PMD18D100 is an npn darlington power transistor in a hermetic to3 package. the device is a monolothic epitaxial structure with built in base-emitter shunt resistor absolute maximum ratings (tcase = 25c unless otherwise stated) vcbo vceo vebo ic ib pd tj,tstg 9jc collector - base voltage (open emitter) collector - emitter voltage (open base) emitter - base voltage (open collector) collector current continuous peak base current total power dissipation at tcase= 50c operating junction and storage temperature thermal resistance 100v 100v 5v 50a 100a 1.5a 300w -65 to 200c 0.4c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
PMD18D100 electrical characteristics (tj = 0 to 200c, unless otherwise stated) parameter test conditions win. typ. max. units on characteristics collector - emitter ce(sat) saturation voltage* base - emitter turn-on vbe voltage* vbe(sat) base ' emitter saturation* hfe dc current gain* forward bias secondary q/h &/u breakdown current c = 30a ib = 120ma lc = 30a vce = 3v ic = 30a ib = 120ma lc = 30a vre = 3v tj = 25c vce = 30v ta = 25c 1 sec non-repetitive pulse 2 2.8 2.8 1000 20000 10.0 v v v a off characteristics collector emitter breakdown (br)ceo vo|tage (bgse open)* collector emitter sustaining v(sus)cer vo|tage. emitter base leakage pro ebo current collector emitter leakage cer current ice= 100ma tj-25c ice= 100ma rbe = 2.2kii veb = 5v lc = oa vce = 67v rbe = 2.2kq 100 100 6.0 15.0 v v rria ma dynamic characteristics cob output capacitance hfe small signal current gain common emitter short hfe, circuit forward transfer 1c ratio vcb=10v ie = oa f = 1 mhz tj = 25c ic=18a vce = 3v f = 1 khz tj = 25c lc = isa vce = 3v f=1mhz t, = 25c j 1200 300 4 pf * pulse tested with pulse width < 300us, and duty cycle < 2%
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