thermal resistance, junction-to-case 75 thermal resistance, junction-to-ambient 250 0.46 er dissipation for single operation 0.5 w drain current ?continuous ?.3 a FDN352AP features ?.3 a, ?0v r ds(on) = 180 m ? @ v gs = ?0v ?.1 a, ?0v r ds(on) = 300 m ? @ v gs = ?.5v high performance trench technology for extremely low r ds(on) . high power version of industry standard sot-23 package. identical pin-out to sot-23 with 30% higher power handling capability. applications notebook computer power management general description this p-channel logic level mosfet is produced using fair- child semiconductor advanced power trench process that has been especially tailored to minimize the on-state resistance and y et maintain low gate charge for superior switching perfor- mance. these devices are well suited for low voltage and battery pow- ered applications where low in-line power loss is needed in a ve ry small outline surface mount package. absolute maximum ratings t a = 25? unless otherwise noted pa ck ag e marking and ordering information symbol parameter ratings units v dss drain-source voltage ?0 v v gss gate-source voltage 25 v i d ?pulsed ?0 p d po w t j , t stg operating and storage junction temperature range ?5 to +150 c thermal characteristics r ja c/w r jc device marking device reel size tape width quantity 52ap FDN352AP 7 8mm 3000 units g supersot -3 g s d d g s smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics t a = 25? unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?ource breakdown voltage v gs = 0 v, i d = ?50 a ?0 v ? bv dss ? t j breakdown voltage temperature coef?ient i d = ?50 a, referenced to 25 c ?7 mv/ c i dss zero gate voltage drain current v ds = ?4 v, v gs = 0 v 1 a i gss gate?ody leakage v gs = 25v, v ds = 0 v 100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = ?50 a ?.8 ?.0 ?.5 v ? v gs(th) ? t j gate threshold voltage t emperature coef?ient i d = ?50 a, referenced to 25 c4 mv/ c r ds(on) static drain?ource on?esistance v gs = ?0 v, i d = ?.3 a v gs = ?.5 v, i d = ?.1 a v gs = ?.5 v, i d = ?.1 a, t j = 125 c 150 250 330 180 300 400 m ? g fs f orward transconductance v ds = ? v, i d = ?.9 a 2.0 s dynamic characteristics c iss input capacitance v ds = ?5 v, v gs = 0 v, f = 1.0 mhz 150 pf c oss output capacitance 40 pf c rss reverse transfer capacitance 20 pf switching characteristics t d(on) tu r n?n delay time v dd = ?0 v, i d = ? a, v gs = ?0 v, r gen = 6 ? 48ns t r tu r n?n rise time 15 28 ns t d(off) tu r n?ff delay time 10 18 ns t f tu r n?ff fall time 12ns q g t otal gate charge v ds = ?0v, i d = ?.9 a, v gs = ?.5 v 1.4 1.9 nc q gs gate?ource charge 0.5 nc q gd gate?rain charge 0.5 nc drain?ource diode characteristics and maximum ratings i s maximum continuous drain?ource diode forward current ?.42 a v sd drain?ource diode forward voltage v gs = 0 v, i s = ?.42 a ?.8 ?.2 v t rr diode reverse recovery time i f = ?.9 a, di f /dt = 100 a/? 17 ns q rr diode reverse recovery charge 7 nc FDN352AP smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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