maximum ratings (sot-563 package): (t a =25c) symbol units power dissipation (note 1) p d 350 mw power dissipation (note 2) p d 300 mw power dissipation (note 3) p d 150 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w maximum ratings q1: (t a =25c) symbol units drain-source voltage v ds 50 v drain-gate voltage v dg 50 v gate-source voltage v gs 12 v continuous drain current i d 280 ma maximum pulsed drain current i dm 1.5 a maximum ratings d1: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v continuous forward current i f 500 ma peak repetitive forward current, tp 1ms i frm 3.5 a forward surge current, tp = 8ms i fsm 10 a electrical characteristics q1: (t a =25c unless otherwise noted) symbol test conditions min max units i gssf, i gssr v gs =5v 100 na i gssf, i gssr v gs =10v 2.0 a i gssf, i gssr v gs =12v 2.0 a i dss v ds =50v, v gs =0v 50 na bv dss v gs =0v, i d =10a 50 v v gs(th) v ds =v gs , i d =250a 0.49 1.0 v CMLM0305 CMLM0305g multi discrete module ? surface mount n-channel mosfet and low v f silicon schottky diode sot-563 case central semiconductor corp. tm r2 (22-may 2008) description: the central semiconductor CMLM0305 and CMLM0305g are multi discrete modules ? consisting of a single n-channel enhancement-mode mosfet and a low v f schottky diode packaged in a space saving picomini? sot-563 surface mount case. this device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. tm features: ? the CMLM0305g is halogen free by design. ? esd protection up to 2kv ? low r ds(on) transistor (3 max @ vgs=1.8v) ? low v f schottky diode (0.47v max @ 0.5a) applications: ? dc / dc converters ? battery powered portable equipment notes: (1) ceramic or aluminum core pc board with copper mounting pad area of 4.0 mm 2 (2) fr-4 epoxy pc board with copper mounting pad area of 4.0 mm 2 (3) fr-4 epoxy pc board with copper mounting pad area of 1.4 mm 2 CMLM0305 marking code: 5c3 CMLM0305g marking code: 5cg
central semiconductor corp. tm CMLM0305 CMLM0305g multi discrete module ? surface mount n-channel mosfet and low v f silicon schottky diode r2 (22-may 2008) electrical characteristics q1 - c ontinued: symbol test conditions min typ max units r ds(on) v gs =1.8v, i d =50ma 1.6 3.0 r ds(on) v gs =2.5v, i d =50ma 1.3 2.5 r ds(on) v gs =5.0v, i d =50ma 1.1 2.0 g fs v ds =10v, i d =200ma 200 ms c rss v ds =25v, v gs =0, f=1.0mhz 5.0 pf c iss v ds =25v, v gs =0, f=1.0mhz 50 pf c oss v ds =25v, v gs =0, f=1.0mhz 25 pf v sd v gs =0v, i s =115ma 1.4 v electrical characteristics d1: (t a =25c) i r v r = 10v 20 a i r v r = 30v 100 a bv r i r = 500a 40 v v f i f = 100a 0.13 v v f i f = 1.0ma 0.21 v v f i f = 10ma 0.27 v v f i f = 100ma 0.35 v v f i f = 500ma 0.47 v c t v r = 1.0v, f=1.0 mhz 50 pf sot-563 - mechanical outline lead code: 1) gate q1 2) source q1 3) cathode d1 4) anode d1 5) anode d1 6) drain q1 CMLM0305 marking code: 5c3 CMLM0305g marking code: 5cg
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