SVD8N80T/f_datasheet 8a, 800v n-channel mosfet general description SVD8N80T/f is an n-channel enhancement mode power mos field effect transistor which is produced using silan proprietary s-rin tm structure dmos technology. the improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are widely used in ac-dc power suppliers, dc-dc converters and h-bridge pwm motor drivers. features ? 8a,800v,r ds(on) typ =1.3 @v gs =10v ? low gate charge ? low crss ? fast switching ? improved dv/dt capability nomenclature ordering specifications part no. package marking material packing SVD8N80T to-220-3l SVD8N80T pb free tube svd8n80f to-220f-3l svd8n80f pb free tube hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.20 http://www.silan.com.cn page 1 of 8
SVD8N80T/f_datasheet hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.20 http://www.silan.com.cn page 2 of 8 absolute maximum ratings (t c =25 c unless otherwise noted) rating parameter symbol SVD8N80T svd8n80f unit drain-source voltage v ds 800 v gate-source voltage v gs 30 v drain current i d 8.0 a drain current pulsed i dm 35 a 180 59 w power dissipation(t c =25 c) -derate above 25 c p d 1.44 0.48 w/ c single pulsed avalanche energy (note 1) e as 402 mj operation junction temperature t j -55 +150 c storage temperature tstg -55 +150 c thermal characteristics rating parameter symbol SVD8N80T svd8n80f unit thermal resistance, junction-to-case r jc 0.7 2.0 c/w thermal resistance, junction-to-ambient r ja 62.5 120 c/w electrical characteristics (t c =25 c unless otherwise noted) parameter symbol test conditions min. typ. max. unit drain -source breakdown voltage b vdss vgs=0v, id=250a 800 -- -- v drain-source leakage current i dss vds=800v, vgs=0v -- -- 10 a gate-source leakage current i gss vgs=30v, vds=0v -- -- 100 na gate threshold voltage v gs(th) vgs= vds, id=250a 2.5 -- 4.5 v static drain- source on state resistance r ds(on) vgs=10v, id=4a -- 1.3 1.55 input capacitance c iss -- 1354 2020 output capacitance c oss -- 112 171 reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz -- 11 18 pf turn-on delay time t d(on) -- 39.6 87 turn-on rise time t r -- 76 240 turn-off delay time t d(off) -- 82.2 135 turn-off fall time t f v dd =400v,i d =8.0a, r g =25 (note 2,3) -- 43.8 145 ns total gate charge q g -- 32.2 45 gate-source charge q gs -- 7.66 -- gate-drain charge q gd v ds =640v,i d =8.0a, v gs =10v (note 2,3) -- 15.27 -- nc
SVD8N80T/f_datasheet source-drain diode ratings and characteristics parameter symbol test conditions min. typ. max. unit continuous source current i s -- -- 8.0 pulsed source current i sm integral reverse p-n junction diode in the mosfet -- -- 32 a diode forward voltage v sd i s =8.0a,v gs =0v -- -- 1.4 v reverse recovery time t rr -- 680 -- ns reverse recovery charge q rr i s =8.0a,v gs =0v, di f /dt=100a/s -- 8.1 -- c notes: 1. l=30mh, i as =4.74a, v dd =160v, r g =25 , starting t j =25 c; 2. pulse test: pulse width 300 s,duty cycle 2%; 3. essentially independent of operating temperature. typical characteristics hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.20 http://www.silan.com.cn page 3 of 8
SVD8N80T/f_datasheet typical characteristics(continue) hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.20 http://www.silan.com.cn page 4 of 8 figure 5. capacitance characteristics figure 6. gate charge characteristics capacitance (pf) 0.1 1 10 100 drain source voltage C v ds v gate source voltage C v gs v 0 0 5 10 25 35 15 20 30 total gate charge C q g nc 2 4 6 8 10 12 0 500 1000 1500 2000 2500 notes i d =8.0a v ds =640v v ds =400v v ds =160v 0.8 0.9 1.1 1.0 -100 -50 0 50 100 200 drain source breakdown voltage - b vdss (normalized)(v) junction temperature C t j c figure 7. breakdown voltage variation vs. temperature drain source breakdown voltage C r ds(on) (normalized)( ? ) figure 8. on-resistance variation c iss c oss c rss c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes 1. v gs =0v 2. f=1mhz 1.2 150 notes 1. v gs =0v 2. i d =250 a 0.0 0.5 2.0 1.5 -100 -50 0 50 100 200 3.0 150 notes 1. v gs =10v 2. i d =4a 1.0 2.5 junction temperature C t j c
SVD8N80T/f_datasheet typical test circuit v gs 10v charge 12v 50k 300nf same type as dut dut v gs hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.20 http://www.silan.com.cn page 5 of 8 3ma v ds qg qgs qgd gate charge test circuit & waveform resistive switching test circuit & waveform v ds v gs r g r l v dd 10v v ds v gs 10% 90% td(on) t on tr td(off) t off t f unclamped inductive switchi ng test circuit & waveform v ds r g v dd 10v l tp i d b vdss i as v dd tp time v ds(t) i d(t) e as = 1 - 2 li as 2 b vdss b vdss v dd dut dut 200nf
SVD8N80T/f_datasheet package outline to-220-3l unit: mm to-220f-3l unit: mm hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.20 http://www.silan.com.cn page 6 of 8
SVD8N80T/f_datasheet hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.20 http://www.silan.com.cn page 7 of 8 disclaimer: ? silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor products malfunction or fail with some probability under special conditions. when using silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such silan products could cause loss of body injury or damage to property. ? silan will supply the best possible product for customers!
SVD8N80T/f_datasheet hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.20 http://www.silan.com.cn page 8 of 8 attachment revision history date rev description page 2010.06.07 1.0 original 2010.10.20 1.1 modify the template of datasheet
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