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bzx55t series silicon epitaxial planar zener diodes features ? very sharp revers e characteristic ? low reverse current level ? very high stability ? low noise ? available with tighter tolerances absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 500 mw junction temperature t j 175 o c storage temperature range t stg - 65 to + 175 o c maximum thermal resistance (t a = 25 o c) parameter symbol max. unit thermal resistance junction to ambient air r thja 300 k/w characteristics at t a = 25 o c parameter symbol max. unit forward voltage at i f = 200 ma v f 1.5 v max. 3.9 max. 1.9 glass case do-35 max. 0.5 min. 27.5 min. 27.5 xxx cathode band part no. st "st" brand dimensions in mm black black black 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
type v zmin 2) v zma x 2) r zma x at i z i rma x at v r i rma x 1) at v r 1) v v ? ma a v a v bzx55t2v4 2.3 2.6 100 5 5 0.5 50 1 bzx55t2v4a 2.3 2.5 100 5 5 0.5 50 1 bzx55t2v4b 2.4 2.6 100 5 5 0.5 50 1 bzx55t2v7 2.5 2.9 100 5 5 0.5 10 1 bzx55t2v7a 2.5 2.7 100 5 5 0.5 10 1 bzx55t2v7b 2.6 2.8 100 5 5 0.5 10 1 bzx55t2v7c 2.7 2.9 100 5 5 0.5 10 1 bzx55t3v0 2.8 3.2 100 5 5 0.5 6 1 bzx55t3v0a 2.8 3 100 5 5 0.5 6 1 bzx55t3v0b 2.9 3.1 100 5 5 0.5 6 1 bzx55t3v0c 3 3.2 100 5 5 0.5 6 1 bzx55t3v3 3.1 3.5 100 5 5 1 2 0.8 bzx55t3v3a 3.1 3.3 100 5 5 1 2 0.8 bzx55t3v3b 3.2 3.4 100 5 5 1 2 0.8 bzx55t3v3c 3.3 3.5 100 5 5 1 2 0.8 bzx55t3v6 3.4 3.8 100 5 5 1 2 0.8 bzx55t3v6a 3.4 3.6 100 5 5 1 2 0.8 bzx55t3v6b 3.5 3.7 100 5 5 1 2 0.8 bzx55t3v6c 3.6 3.8 100 5 5 1 2 0.8 bzx55t3v9 3.7 4.1 100 5 5 1 2 0.8 bzx55t3v9a 3.7 3.9 100 5 5 1 2 0.8 bzx55t3v9b 3.8 4 100 5 5 1 2 0.8 bzx55t3v9c 3.9 4.1 100 5 5 1 2 0.8 bzx55t4v3 4 4.5 100 5 5 1.5 1 1 bzx55t4v3a 4 4.2 100 5 5 1.5 1 1 bzx55t4v3b 4.1 4.3 100 5 5 1.5 1 1 bzx55t4v3c 4.2 4.4 100 5 5 1.5 1 1 bzx55t4v3d 4.3 4.5 100 5 5 1.5 1 1 bzx55t4v7 4.4 4.9 100 5 5 2 0.5 1 bzx55t4v7a 4.4 4.6 100 5 5 2 0.5 1 bzx55t4v7b 4.5 4.7 100 5 5 2 0.5 1 bzx55t4v7c 4.6 4.8 100 5 5 2 0.5 1 bzx55t4v7d 4.7 4.9 100 5 5 2 0.5 1 bzx55t5v1 4.8 5.3 100 5 5 2 0.1 1 bzx55t5v1a 4.8 5 100 5 5 2 0.1 1 bzx55t5v1b 4.9 5.1 100 5 5 2 0.1 1 bzx55t5v1c 5 5.2 100 5 5 2 0.1 1 bzx55t5v1d 5.1 5.3 100 5 5 2 0.1 1 bzx55t5v6 5.2 5.9 40 5 5 2 0.1 1 bzx55t5v6a 5.2 5.5 40 5 5 2 0.1 1 bzx55t5v6b 5.3 5.6 40 5 5 2 0.1 1 bzx55t5v6c 5.4 5.7 40 5 5 2 0.1 1 bzx55t5v6d 5.5 5.8 40 5 5 2 0.1 1 bzx55t5v6e 5.6 5.9 40 5 5 2 0.1 1 bzx55t6v2 5.7 6.6 15 5 1 3 0.1 2 bzx55t6v2a 5.7 6 15 5 1 3 0.1 2 bzx55t6v2b 5.8 6.1 15 5 1 3 0.1 2 bzx55t6v2c 6 6.3 15 5 1 3 0.1 2 bzx55t6v2d 6.1 6.4 15 5 1 3 0.1 2 bzx55t6v2e 6.3 6.6 15 5 1 3 0.1 2 bzx55t series silicon epitaxial planar zener diodes 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
type v zmin 2) v zma x 2) r zma x at i z i rma x at v r i rma x 1) at v r 1) v v ? ma a v a v bzx55t6v8 6.4 7.2 15 5 1 3.5 0.1 3 bzx55t6v8a 6.4 6.7 15 5 1 3.5 0.1 3 bzx55t6v8b 6.6 6.9 15 5 1 3.5 0.1 3 bzx55t6v8c 6.7 7 15 5 1 3.5 0.1 3 bzx55t6v8d 6.9 7.2 15 5 1 3.5 0.1 3 bzx55t7v5 7 7.9 15 5 1 5.0 0.1 3.5 bzx55t7v5a 7 7.3 15 5 1 5.0 0.1 3.5 bzx55t7v5b 7.2 7.6 15 5 1 5.0 0.1 3.5 bzx55t7v5c 7.3 7.7 15 5 1 5.0 0.1 3.5 bzx55t7v5d 7.5 7.9 15 5 1 5.0 0.1 3.5 bzx55t8v2 7.7 8.7 20 5 1 6.2 0.1 4 bzx55t8v2a 7.7 8.1 20 5 1 6.2 0.1 4 bzx55t8v2b 7.9 8.3 20 5 1 6.2 0.1 4 bzx55t8v2c 8.1 8.5 20 5 1 6.2 0.1 4 bzx55t8v2d 8.3 8.7 20 5 1 6.2 0.1 4 bzx55t9v1 8.5 9.7 20 5 1 6.8 - - bzx55t9v1a 8.5 8.9 20 5 1 6.8 - - bzx55t9v1b 8.7 9.1 20 5 1 6.8 - - bzx55t9v1c 8.9 9.3 20 5 1 6.8 - - bzx55t9v1d 9.1 9.5 20 5 1 6.8 - - bzx55t9v1e 9.3 9.7 20 5 1 6.8 - - bzx55t10 9.5 10.6 25 5 1 7.5 - - bzx55t10a 9.5 9.9 25 5 1 7.5 - - bzx55t10b 9.7 10.1 25 5 1 7.5 - - bzx55t10c 9.9 10.3 25 5 1 7.5 - - bzx55t10d 10.2 10.6 25 5 1 7.5 - - bzx55t11 10.4 11.6 25 5 1 8.2 - - bzx55t11a 10.4 10.8 25 5 1 8.2 - - bzx55t11b 10.7 11.1 25 5 1 8.2 - - bzx55t11c 10.9 11.3 25 5 1 8.2 - - bzx55t11d 11.1 11.6 25 5 1 8.2 - - bzx55t12 11.4 12.7 35 5 1 9.5 - - bzx55t12a 11.4 11.9 35 5 1 9.5 - - bzx55t12b 11.6 12.1 35 5 1 9.5 - - bzx55t12c 11.9 12.4 35 5 1 9.5 - - bzx55t12d 12.2 12.7 35 5 1 9.5 - - bzx55t12x 11.44 12.03 35 5 1 9.5 - - bzx55t13 12.4 13.4 35 5 1 10 - - bzx55t13a 12.4 12.9 35 5 1 10 - - bzx55t13b 12.6 13.1 35 5 1 10 - - bzx55t13c 12.9 13.4 35 5 1 10 - - bzx55t14 13.2 14.3 35 5 1 11 - - bzx55t14a 13.2 13.7 35 5 1 11 - - bzx55t14b 13.5 14 35 5 1 11 - - bzx55t14c 13.8 14.3 35 5 1 11 - - bzx55t15 14.1 15.5 40 5 1 11.5 - - bzx55t15a 14.1 14.7 40 5 1 11.5 - - bzx55t15b 14.5 15.1 40 5 1 11.5 - - bzx55t15c 14.9 15.5 40 5 1 11.5 - - bzx55t15x 14.35 15.09 40 5 1 11.5 - - bzx55t series silicon epitaxial planar zener diodes 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
type v zmin 2) v zma x 2) r zma x at i z i rma x at v r i rma x 1) at v r 1) v v ? ma a v a v bzx55t16 15.3 17.1 45 5 1 12 - - bzx55t16a 15.3 15.9 45 5 1 12 - - bzx55t16b 15.7 16.5 45 5 1 12 - - bzx55t16c 16.3 17.1 45 5 1 12 - - bzx55t18 16.9 19 55 5 1 13 - - bzx55t18a 16.9 17.7 55 5 1 13 - - bzx55t18b 17.5 18.3 55 5 1 13 - - bzx55t18c 18.1 19 55 5 1 13 - - BZX55T20 18.8 21.2 60 2 1 15 - - BZX55T20a 18.8 19.7 60 2 1 15 - - BZX55T20b 19.5 20.4 60 2 1 15 - - BZX55T20c 20.2 21.2 60 2 1 15 - - bzx55t22 20.9 23.3 65 2 1 17 - - bzx55t22a 20.9 21.9 65 2 1 17 - - bzx55t22b 21.6 22.6 65 2 1 17 - - bzx55t22c 22.3 23.3 65 2 1 17 - - bzx55t24 22.9 25.5 70 2 1 19 - - bzx55t24a 22.9 24 70 2 1 19 - - bzx55t24b 23.6 24.7 70 2 1 19 - - bzx55t24c 24.3 25.5 70 2 1 19 - - bzx55t24x 22.61 23.77 70 2 1 19 - - bzx55t27 25.2 28.6 80 2 1 21 - - bzx55t27a 25.2 26.6 80 2 1 21 - - bzx55t27b 26.2 27.6 80 2 1 21 - - bzx55t27c 27.2 28.6 80 2 1 21 - - bzx55t27x 26.99 28.39 80 2 1 21 - - bzx55t30 28.2 31.6 100 2 1 23 - - bzx55t30a 28.2 29.6 100 2 1 23 - - bzx55t30b 29.2 30.6 100 2 1 23 - - bzx55t30c 30.2 31.6 100 2 1 23 - - bzx55t30x 29.02 30.51 100 2 1 23 - - bzx55t33 31.2 34.5 120 2 1 25 - - bzx55t33a 31.2 32.6 120 2 1 25 - - bzx55t33b 32.2 33.6 120 2 1 25 - - bzx55t33c 33.2 34.5 120 2 1 25 - - bzx55t36 34.2 38 140 2 1 27 - - bzx55t36a 34.2 35.7 140 2 1 27 - - bzx55t36b 35.3 36.8 140 2 1 27 - - bzx55t36c 36.4 38 140 2 1 27 - - bzx55t36x 35.36 37.19 140 2 1 27 - - 1) additional measurement please note: additional measurem ent of voltage group 9v1 to 36 i r at 95% v zmin = < 35 na at t j 25 o c 2) tested with pulses tp = 20 ms. bzx55t series silicon epitaxial planar zener diodes 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification

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