these miniature surf ace mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are dc-dc converters, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. ?low r ds(on) provides higher efficiency ? and extends battery life ? miniature tsop-6 surface mount package saves board space notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature 1 2 3 4 5 6 v ds (v) r ds(on) ( ? )i d (a) 0.45 @ v gs = 4.5v 1.2 0.72 @ v gs = 2.5v 1.0 1.09 @ v gs = -4.5v -0.85 1.50 @ v gs = -2.5v -0.75 25 -25 symbol n-channe l p-channe l units v ds 25 -25 v gs 8-8 t a =25 o c 1.2 -0.9 t a =70 o c 0.95 -0.65 i dm 3.5 2.5 i s 1 -1 a t a =25 o c t a =70 o c t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w 1.25 0.8 symbol maximum units maximum junction-to-ambien t a t <= 5 sec r thja 100 o c/ w thermal resistance ratings parame te r 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com AM3850C product specification
notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. ch min typ max v gs = 0 v, i d = 250 ua n 25 v gs = 0 v, i d = -250 ua p -25 v gs = v ds , i d = 250 ua n 0.65 0.81 1.5 v gs = v ds , i d = -250 ua p -0.65 -0.83 -1.5 v ds = 0 v, v gs = 8 v n 100 v ds = 0 v, v gs = -8 v p -100 v ds = 20 v, v gs = 0 v 1 v ds = 20 v, v gs = 0 v, t j = 55 o c 10 v ds = 5 v, v gs = 4.5 v n1 v ds = -5 v, v gs = -4.5 v p-1 v gs = 4.5 v, i d = 0.5 a 0.35 0.45 v gs = 2.5 v, i d = 0.2 a 0.45 0.72 v gs = -4.5 v, i d = -0.41 a 0.860 1.09 v gs = -2.5 v, i d = -0.2 a 1.15 1.50 v ds = 5 v, i d = 0.5 a n 1.45 v ds = -5 v, i d = 0.4 a p 0.9 n 1.64 2.3 p1.11.5 n0.4 p0.33 n0.45 p0.26 n 36 p721 n 8.5 18 p919 n1730 p 55 112 n1325 p3571 switching turn-on delay time ris e time ns n-chaneel v dd =6v, v gs =4.5v, i d =0.5a , r ge n =50 ? , p-channel v dd =-6v, v gs =-4.5v, i d =-0.41a r gen =50 ? fall-time t f turn-off delay time t d(on) t r t d(off) ? total gate charge q g gate-source charge q gs n-channel v ds =5v, v gs =4.5v, i d =0.5a p-channel v ds =-5v, v gs =-4.5v, i d =-0.25a drain-source on-resistance a r ds(on) n p on-state drain current a i d(on) a gate-body leakage current i gss ua i dss zero gate voltage drain current n gate-threshold voltage v gs(th) drain-source breakdown voltage v (br)dss limits unit specifications (t a = 25 o c unless otherwise noted) ua static te s t conditions v v symbol parameter forward tranconductance a g fs s nc gate-drain charge q gd dynamic b 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com AM3850C product specification
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