SQ1470EH features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? aec-q101 qualified d ?100 % r g and uis tested ? compliant to rohs directive 2002/95/ec notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) 30 r ds(on) ( ? ) at v gs = 4.5 v 0.065 r ds(on) ( ? ) at v gs = 2.5 v 0.095 i d (a) 2.8 configuration single sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top view d d g d d s marking code 9c xx lot traceability and date code part # code yy d g s n-channel mosfet ordering information package sc-70 lead (pb)-free and ha logen-free SQ1470EH-t1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 12 continuous drain current a t c = 25 c i d 2.8 a t c = 125 c 2.8 continuous source curr ent (diode conduction) a i s 2.8 pulsed drain current b i dm 11 single pulse avalanche current l = 0.1 mh i as 10 single pulse avalanche energy e as 5 mj maximum power dissipation b t c = 25 c p d 3.3 w t c = 125 c 1.1 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 125 c/w junction-to-foot (drain) r thjf 45 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 1.0 1.6 gate-source leakage i gss v ds = 0 v, v gs = 12 v - - 500 na zero gate voltage drain current i dss v gs = 0 v v ds = 30 v - - 1 a v gs = 0 v v ds = 30 v, t j = 125 c - - 50 v gs = 0 v v ds = 30 v, t j = 175 c - - 150 on-state drain current a i d(on) v gs = 4.5 v v ds ??? 5 v 5 - - a drain-source on-state resistance a r ds(on) v gs = 4.5 v i d = 3.8 a - 0.050 0.065 ? v gs = 4.5 v i d = 3.8 a, t j = 125 c - - 0.097 v gs = 4.5 v i d = 3.8 a, t j = 175 c - - 0.115 v gs = 2.5 v i d = 3.1 a - 0.070 0.095 forward transconductance b g fs v ds = 15 v, i d = 2 a - 8 - s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz - 488 610 pf output capacitance c oss -6075 reverse transfer capacitance c rss -3645 total gate charge c q g v gs = 4.5 v v ds = 15 v, i d = 3.8 a -4.46.6 nc gate-source charge c q gs -1- gate-drain charge c q gd -1- gate resistance r g f = 1 mhz 3 6.35 9.7 ? turn-on delay time c t d(on) v dd = 15 v, r l = 3.9 ? i d ? 3.8 a, v gen = 4.5 v, r g = 1 ? -812 ns rise time c t r -1320 turn-off delay time c t d(off) -1421 fall time c t f -812 source-drain diode ratings and characteristics b pulsed current a i sm --11a forward voltage v sd i f = 2.5 a, v gs = 0 v - 0.8 1.2 v SQ1470EH product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. spefats t 5 , unless otherwise noted parameter sm test ts m. tp. ma. t static rainsource reakdown voltage v s v s 0 v, 50 a 0 v atesource threshold voltage v sth v s v s , 50 a 0.6 .0 .6 atesource eakage ss v s 0 v, v s v 500 na ero ate voltage rain urrent ss v s 0 v v s 0 v a v s 0 v v s 0 v, t 5 50 v s 0 v v s 0 v, t 75 50 nstate rain urrent a on v s .5 v v s t 5 v 5 a rainsource nstate resistance a r son v s .5 v . a 0.050 0.065 v s .5 v . a, t 5 0.097 v s .5 v . a, t 75 0.5 v s .5 v . a 0.070 0.095 forward transconductance b g fs v s 5 v, a s ynamic b nput apacitance iss v s 0 v v s 5 v, f m 60 pf utput apacitance oss 6075 reverse transfer apacitance rss 65 total ate harge c g v s .5 v v s 5 v, . a .6.6 n atesource harge c gs aterain harge c gd ate resistance r g f m 6.5 9.7 turnn elay time c t don v 5 v, r .9 . a, v e .5 v, r g ns rise time c t r 0 turnff elay time c t doff fall time c t f sourcerain iode ratings and haracteristics b pulsed urrent a sm a forward voltage v s f .5 a, v s 0 v 0. . v
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