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| geometry process details principal device types cqdd-25m series cq220-25m series cq220-25mfp series gross die per 4 inch wafer 373 process CPQ166 triac 25 amp, 600 volt triac chip process glass passivated mesa die size 165 x 165 mils die thickness 9.1 mils 0.4 mils mt1 bonding pad area 134 x 100 mils gate bonding pad area 28 x 28 mils top side metalization al - 45,000? back side metalization al/mo/ni/ag - 32,000? www.centralsemi.com r1 (29-april 2010) http://
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