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savantic semiconductor product specification silicon pnp power transistors 2SB1287 d escription with to-220fa package high dc current gain low saturation voltage complement to type 2sd1765 darlington applications for low frequency power amplifier and power driver applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector -emitter voltage open base -100 v v ebo emitter-base voltage open collector -8 v i c collector current -2 a i cm collector current-peak -3 a t a =25 2 p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1287 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-5ma; i b =0 -100 v v (br)cbo collector-base breakdown voltage i c =-50a; i e =0 -100 v v cesat collector-emitter saturation voltage i c =-1a ;i b =-1ma -1.5 v i cbo collector cut-off current v cb =-100v; i e =0 -10 a i ebo emitter cut-off current v eb =-7v; i c =0 -3.0 ma h fe dc current gain i c =-1a ; v ce =-2v 1000 10000 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 35 pf
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1287 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)

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