tsztni-donductoi ^ptoaueti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 vn35ak, vn66ak, vn67ak, VN98AK, vn99ak n-channel enhancement-mode vertical power mosfet features ? high speed, high current switching ? high gain-bandwidth product ? inherently temperature stable ? extended safe operating area ? simple dc biasing ? requires almost zero current drive applications ? high current analog switches ? rf power amplifiers ? laser diode pulsers ? line drivers ? logic buffers ? pulse amplifiers absolute maximum ratings (ta = 25 c unless otherwise noted) drain-source voltage vn35ak 35v vn66ak, vn67ak 60v VN98AK, vn99ak 9qy drain-gate voltage vn35ak 35v vn66ak, vn67ak 60v VN98AK. vn99ak 90v continuous drain current (see note 1) 1.2a peak drain current (see note 2) 3.0a gate-source forward voltage , +30v gate-source reverse voltage -30v thermal resistance, junction to case 20c/w continuous device dissipation at (or below) 25'c case temperature 6.25w linear derating factor 50mw/c operating junction temperature range -55 to -h50c storage temperature range -55 to +150c lead temperature (1/16 in. from case for 10 sec) +300c note 1. tc = 25c; controlled by typical rds(sn) and maximum power dissipation. note 2. pulse width 80msec, duty cycle 10%. note 3. the drain-source diode is an integral part of the mosfet structure. schematic diagram (outline dwg. to-39) drain q gate o gate body internally connected to tourc*. drain common lo c?m. chip topography quality semi-conductors
vn35ak, vn66ak, vim67ak, VN98AK, vn99ak electrical characteristics! (25c unless otherwise noted) characteristic _1 _2 _3 4; _s 6 ~7 _b __9 10 11 1? 13 14 16 16 17 18 8 t a t [ c d v n a m 1 c bvoss drain-source breakdown vosith) gats-threshold voltage iqss gate-body leakage zero gate voltage dss drain current id'on' on-state drain current drain-source vosic"" saturation voltage vn66ak VN98AK vn35ak vn67ax vn99ak gt> forward transconductance c.jj input capacitance common source output &>" capacitance cru reverse transfer capacitance ton turn on time tq? turn off time vnwak mm 3s 0.0 1.d 170 tvp o.s 100 z.o 1.0 2.2 250 40 38 7 3 3 max 2.0 100 500 10 500 2.5 50 45 10 8 8 vnmak vn87ak min i 60 0.8 1.0 170 typ 0.5 100 2.0 1.0 2.2 1.1 22 250 40 35 l_8~l 3 3 max 2.0 100 500 10 500 3.0 3.5 50 40 10 8 a vnmak vnmak min 90 0.8 1,0 170 typ 0.5 100 <2jo~ 1.1 22 i 1.8 2.2 250 40 32 5 3 3 max 2.0 100 500 10 soo 4.0 4.5 50 40 10 8 8 unit v na, ma na a v mfl pf ns test conditions vus = 0, (0 - 10fia vos = vas. lo ? 1 ma vas = 15v. vds = 0 vos = 15v. vos = 0. t* = 125-c (note 2) vos = max. rating. vgs = 0 vtis ~ 0.8 max. rating, vos ? d. ta = 125c (note 2) rvcis ? 25v, vgs = o vps = 25v. vgs = 10v vgs ? 5v. id ? 0.3a vgs = 10v, lo = 1.0a vas = sv. lo - 0.3a vcs = 10v. id = 1.0a vds = 24v, id = 0.5a, f = 1 khz vgs ? 0, vos = 24v, f = 1mhz (note 1) (note 2) not* 1. pulse test ? 80ps pulse, twj duty cycle. note 2. sample test. thermal response power dissipation v* case or ambient temperature dc safe operating region tc = 25c breakdown voltage variation with temperature 0 ?4d **0 *120 ?1(0 *200 t - temmbatuke co t to 100 vd5 - ohain-to-source voltage (volts! -40-10 0 ? 40 60 so 100 l? 140
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