30 a b s ol ut e ma ximum r at ing s (t a =25 c unles s otherwis e noted) p arameter s ymbol limit unit drain-s ource voltage v ds v g ate-s ource voltage v g s v drain c urrent-c ontinuous @ t j =25 c -p uls ed i d 4 a a a w i dm 16 drain-s ource diode f orward c urrent i s 1.25 maximum p ower dis s ipation p d operating j unction and s torage temperature r ange t j , t s t g -55 to 150 c the r mal c har ac te r is tic s t hermal r es is tance, j unction-to-ambient r thj a 100 /w c s t s 3623 1. 25 a a b p r oduc t s ummar y v ds s i d r ds (on) ( m : ) max 30v 4a 50 @ v g s = 10v 65 @ v g s = 4.5v f e at ur e s s uper high dens e cell des ign for low r ds (on ). r ugged and reliable. s ot -26 package. 20 g 2 s 1 g 1 d1 d2 s 2 s ot 26 t op v iew s 2 d2 s 1 g 1 d1 g 2 1 2 3 6 5 4 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
e l e c t r ic al c har ac t e r is t ic s (t a 25 c unles s otherwis e noted) = p arameter s ymbol c ondition min typ max unit of f c har ac t e r is t ic s drain-s ource b reakdown voltage b v ds s = v g s 0v, i d 250ua = 30 v zero g ate voltage drain c urrent i ds s v ds 24v, v g s 0v = = 1 ua g ate-b ody leakage i g s s v g s 20v, v ds 0v = = 100 na on c har ac t e r is t ic s b g ate t hres hold voltage v g s (th) v ds v g s , i d = 250ua = 1 3 v drain-s ource on-s tate r es is tance r ds (on) v g s 10v, i d 3a 40 50 v g s 4.5v, i d 2a 65 on-s tate drain c urrent i d(on) v ds = 5v, v g s = 4.5v a s f orward trans conductance f s g v ds 5v, i d dy namic c har ac t e r is t ic s c input c apacitance c is s c r s s c os s output c apacitance r evers e trans fer c apacitance v ds =15v, v g s = 0v f =1.0mh z p f p f p f s wit c hing c har ac t e r is t ic s c turn-on delay time r is e time turn-off delay time t d(on) t r t d(of f ) t f v dd = 15v, i d = 1a, v g s = 10v, r g e n = 6 ohm ns ns ns ns total g ate c harge g ate-s ource c harge g ate-drain c harge q g q gs q gd v ds =15v, i d = 3a, v g s =10v nc nc nc c f all t ime = = = = = m-ohm m-ohm 10 = 3a 7 280 70 38 6 5 18 6 5.9 0.7 1.4 50 1.6 s t s 3623 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
p arameter s ymbol c ondition min typ max unit e l e c t r ic al c har ac t e r is t ic s (t a =25 c unles s otherwis e noted) dr ain-s o ur c e dio de c har ac t e r is t ic s diode f orward voltage v s d v g s = 0v, is =1.25a 0.81 1.15 v b c notes c.g uaranteed by des ign, not s ubject to production tes ting. b.p uls e tes t:p uls e width 300us , duty c ycle 2%. a.s urface mounted on f r 4 b oard, t 10s ec. 5 s t s 3623 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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