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PMPB15XN 20 v, single n-channel trench mosfet 13 september 2012 product data sheet scan or click this qr code to view the latest information for this product 1. product profile 1.1 general description n-channel enhancement mode field-effect transistor (fet) in a leadless medium power dfn2020md-6 (sot1220) surface-mounted device (smd) plastic package using trench mosfet technology. 1.2 features and benefits ? trench mosfet technology ? small and leadless ultra thin smd plastic package: 2 x 2 x 0.65 mm ? exposed drain pad for excellent thermal conduction ? tin-plated 100 % solderable side pads for optical solder inspection 1.3 applications ? charging switch for portable devices ? dc-to-dc converters ? power management in battery-driven portable devices ? hard disk and computing power management 1.4 quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage - - 20 v v gs gate-source voltage t j = 25 c -12 - 12 v i d drain current v gs = 4.5 v; t amb = 25 c; t 5 s [1] - - 10.4 a static characteristics r dson drain-source on-state resistance v gs = 4.5 v; i d = 7.3 a; t j = 25 c - 18 21 m [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 .
nxp semiconductors PMPB15XN 20 v, single n-channel trench mosfet PMPB15XN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 september 2012 2 / 12 2. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 d drain 2 d drain 3 g gate 4 s source 5 d drain 6 d drain 7 d drain 8 s source 6 5 7 8 4 transparent top view 1 2 3 dfn2020md-6 (sot1220) s d g 017aaa253 3. ordering information table 3. ordering information package type number name description version PMPB15XN dfn2020md-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals sot1220 4. marking table 4. marking codes type number marking code PMPB15XN 1j 5. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 20 v v gs gate-source voltage t j = 25 c -12 12 v v gs = 4.5 v; t amb = 25 c; t 5 s [1] - 10.4 a v gs = 4.5 v; t amb = 25 c [1] - 7.3 a i d drain current v gs = 4.5 v; t amb = 100 c [1] - 4.6 a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - 24 a p tot total power dissipation t amb = 25 c [1] - 1.7 w
nxp semiconductors PMPB15XN 20 v, single n-channel trench mosfet PMPB15XN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 september 2012 3 / 12 symbol parameter conditions min max unit t amb = 25 c; t 5 s [1] - 3.5 w t sp = 25 c - 12.5 w t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c source-drain diode i s source current t amb = 25 c [1] - 2 a [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . t j ( c ) - 7 5 1 7 5 1 2 5 2 5 7 5 - 2 5 0 1 7 a a a 1 2 3 4 0 8 0 1 2 0 p d e r ( % ) 0 fig. 1. normalized total power dissipation as a function of junction temperature t j ( c ) - 7 5 1 7 5 1 2 5 2 5 7 5 - 2 5 0 1 7 a a a 1 2 4 4 0 8 0 1 2 0 i d e r ( % ) 0 fig. 2. normalized continuous drain current as a function of junction temperature
nxp semiconductors PMPB15XN 20 v, single n-channel trench mosfet PMPB15XN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 september 2012 4 / 12 017aaa794 1 1 0 - 1 1 0 1 0 2 i d (a) 1 0 - 2 v d s (v) 1 0 - 2 1 0 2 1 0 1 0 - 1 1 t p = 100 s t p = 1 ms t p = 10 ms t p = 100 ms dc; t s p = 25 c dc; t amb = 25 c; drain mounting pad 6 cm 2 limit r dson = v d s / i d i dm = single pulse fig. 3. safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage 6. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit [1] - 235 270 k/w in free air [2] - 67 74 k/w r th(j-a) thermal resistance from junction to ambient in free air; t 5 s [2] - 33 36 k/w r th(j-sp) thermal resistance from junction to solder point - 5 10 k/w [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for drain 6 cm 2 .
nxp semiconductors PMPB15XN 20 v, single n-channel trench mosfet PMPB15XN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 september 2012 5 / 12 017aaa542 t p (s) 1 0 - 3 1 0 2 1 0 3 1 0 1 1 0 - 2 1 0 - 1 1 0 2 1 0 1 0 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 fr4 pcb, standard footprint fig. 4. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa543 t p (s) 1 0 - 3 1 0 2 1 0 3 1 0 1 1 0 - 2 1 0 - 1 1 0 2 1 0 1 0 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 fr4 pcb, mounting pad for drain 6 cm 2 fig. 5. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 250 a; v gs = 0 v; t j = 25 c 20 - - v v gsth gate-source threshold voltage i d = 250 a; v ds = v gs ; t j = 25 c 0.4 0.65 0.9 v i dss drain leakage current v ds = 20 v; v gs = 0 v; t j = 25 c - - 1 a i gss gate leakage current v gs = -12 v; v ds = 0 v; t j = 25 c - - -100 na
nxp semiconductors PMPB15XN 20 v, single n-channel trench mosfet PMPB15XN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 september 2012 6 / 12 symbol parameter conditions min typ max unit v gs = 12 v; v ds = 0 v; t j = 25 c - - 100 na v gs = 4.5 v; i d = 7.3 a; t j = 25 c - 18 21 m v gs = 4.5 v; i d = 7.3 a; t j = 150 c - 27 32 m v gs = 2.5 v; i d = 6.4 a; t j = 25 c - 21 27 m r dson drain-source on-state resistance v gs = 1.8 v; i d = 2.1 a; t j = 25 c - 23 41 m g fs forward transconductance v ds = 10 v; i d = 7.3 a; t j = 25 c - 30 - s r g gate resistance f = 1 mhz - 2 - dynamic characteristics q g(tot) total gate charge - 13.4 20.2 nc q gs gate-source charge - 1.5 - nc q gd gate-drain charge v ds = 10 v; i d = 7.3 a; v gs = 4.5 v; t j = 25 c - 2.6 - nc c iss input capacitance - 1240 - pf c oss output capacitance - 145 - pf c rss reverse transfer capacitance v ds = 10 v; f = 1 mhz; v gs = 0 v; t j = 25 c - 125 - pf t d(on) turn-on delay time - 9 - ns t r rise time - 24 - ns t d(off) turn-off delay time - 31 - ns t f fall time v ds = 10 v; i d = 7.3 a; v gs = 4.5 v; r g(ext) = 6 ; t j = 25 c - 36 - ns source-drain diode v sd source-drain voltage i s = 2 a; v gs = 0 v; t j = 25 c - 0.7 1.2 v v d s (v) 0 4 3 1 2 017aaa795 1 6 2 0 1 2 8 4 2 4 2 8 i d (a) 0 4 . 5 v 2 . 5 v 2 . 1 v 2 v v g s = 1 . 8 v 1 . 6 v 1 . 4 v 1 . 2 v t j = 25 c fig. 6. output characteristics: drain current as a function of drain-source voltage; typical values 017aaa796 v g s (v) 0 1.2 0.8 0.4 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 i d (a) 1 0 - 6 m i n t y p m a x t j = 25 c; v ds = 5 v fig. 7. sub-threshold drain current as a function of gate-source voltage
nxp semiconductors PMPB15XN 20 v, single n-channel trench mosfet PMPB15XN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 september 2012 7 / 12 017aaa797 i d (a) 0 2 4 1 6 8 0.4 0.6 0.2 0.8 0.1 r dson () 0 1 . 5 v 1 . 6 v 1 . 7 v 1 . 8 v 2 v 2 . 2 v 2 . 5 v v g s = 4 . 5 v t j = 25 c fig. 8. drain-source on-state resistance as a function of drain current; typical values v g s (v) 0 5 4 2 3 1 017aaa798 0.04 0.06 0.02 0.08 0.10 r dson () 0 t j = 1 5 0 c t j = 2 5 c i d = 6 a fig. 9. drain-source on-state resistance as a function of gate-source voltage; typical values v g s (v) 0 3 2 1 017aaa799 8 1 6 2 4 i d (a) 0 t j = 2 5 c t j = 1 5 0 c v ds > i d r dson fig. 10. transfer characteristics: drain current as a function of gate-source voltage; typical values t j (c) -60 180 120 0 6 0 017aaa800 1.00 0.75 1.25 1.50 a 0.50 fig. 11. normalized drain-source on-state resistance as a function of junction temperature; typical values
nxp semiconductors PMPB15XN 20 v, single n-channel trench mosfet PMPB15XN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 september 2012 8 / 12 t j (c) -75 175 125 2 5 7 5 -25 017aaa801 0.5 1.0 1.5 v gs(th) (v) 0 m a x t y p m i n i d = 0.25 ma; v ds = v gs fig. 12. gate-source threshold voltage as a function of junction temperature v d s (v) 1 0 - 1 1 0 2 1 0 1 017aaa802 1 0 3 1 0 2 1 0 4 c (pf) 1 0 c i s s c o s s c rss f = 1 mhz; v gs = 0 v fig. 13. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values q g (nc) 0 1 5 1 0 5 017aaa803 1.5 3.0 4.5 v g s (v) 0 i d = 6 a; v ds = 10 v; t amb = 25 c fig. 14. gate-source voltage as a function of gate charge; typical values 0 1 7 a a a 1 3 7 v g s v g s ( t h ) q g s 1 q g s 2 q g d v d s q g ( t o t ) i d q g s v g s ( p l ) fig. 15. gate charge waveform definitions
nxp semiconductors PMPB15XN 20 v, single n-channel trench mosfet PMPB15XN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 september 2012 9 / 12 v d s (v) 0 1.0 0.8 0.4 0.6 0.2 017aaa804 1.0 0.5 1.5 2.0 i s (a) 0 t j = 1 5 0 c t j = 2 5 c v gs = 0 v fig. 16. source current as a function of source-drain voltage; typical values 8. test information t 1 t 2 p t 0 0 6 a a a 8 1 2 d u t y c y c l e = t 1 t 2 fig. 17. duty cycle definition 9. package outline 12-04-30 dimensions in mm 1.1 1.3 1.9 2.1 1.9 2.1 1.0 1.2 3 2 1 4 5 6 0 . 5 1 0 . 6 1 0 . 2 0 . 3 0 . 6 5 0.25 0.35 0.2 0.3 fig. 18. package outline dfn2020md-6 (sot1220)
nxp semiconductors PMPB15XN 20 v, single n-channel trench mosfet PMPB15XN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 september 2012 10 / 12 10. soldering 1 . 3 5 1 . 2 5 1 . 0 5 0 . 9 1 . 1 1 . 2 2 . 5 0 . 9 3 5 0 . 9 3 5 sot1220 footprint information for reflow soldering of dfn2020md-6 package sot1220_fr occupied area solder land solder resist solder land plus solder paste solder paste deposit dimensions in mm 0 . 3 3 ( 6 ) 0 . 7 6 0 . 6 6 0 . 5 6 0 . 2 5 0 . 3 5 0 . 4 5 0 . 2 5 ( 6 ) 0 . 3 5 ( 6 ) 0 . 6 5 0 . 6 5 0 . 4 5 ( 6 ) 0 . 4 3 ( 6 ) 0 . 5 3 ( 6 ) 2 . 0 6 0 . 7 7 5 0 . 2 8 5 fig. 19. reflow soldering footprint for dfn2020md-6 (sot1220)
nxp semiconductors PMPB15XN 20 v, single n-channel trench mosfet PMPB15XN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 september 2012 11 / 12 11. revision history table 8. revision history data sheet id release date data sheet status change notice supersedes PMPB15XN v.1 20120913 product data sheet - -
nxp semiconductors PMPB15XN 20 v, single n-channel trench mosfet PMPB15XN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 13 september 2012 12 / 12 13. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 legal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ? nxp b.v. 2012. all rights reserved for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 13 september 2012

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