Part Number Hot Search : 
1N6084 SAMTEC AM3020 54198 01OD00 PE45137 F1000 S18LA
Product Description
Full Text Search
 

To Download NV4V41SF Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  7 f o 1 e g a p 0 0 . 2 . v e r 0 0 2 0 j e 4 6 0 0 s d 8 0 r jun 20, 2 0 1 3 the mark shows majo r re vised points. the re vised point s can be ea sily search ed b y co pyi ng an "" in th e pdf file and sp ecifying it in the " f ind what:" field. preliminary data sheet NV4V41SF blue-viol et lase r di ode 405 nm blu e-violet laser l ight source des cript ion t h e n v 4 v 4 1 s f i s a h i g h o u t put b l u e - v i o l et l as e r di ode w i t h a w a v e l en g th o f 4 0 5 n m . a n e w ly d e v e l o p ed l d c h ip structur e ach iev es a h i g h o p tical p o w e r o u t p u t o f 6 0 0 m w ( c w). fea t ure s ? h igh optical o u tpu t pow er p o = 6 0 0 m w @ c w ? peak w a vel ength p = 4 0 0 t o 4 0 5 n m ? m u lti tr an s v erse m ode ( later al) ? ope r ating temperat ure ra nge t c = 0 to + 3 0 c ? 5.6 m m can p ackage applications ? blu e- v i o let las er ligh t s ource ? l i ght s o urce f o r lase r d i rect i m agi ng s y s t e m ? l i ght s o urce for ind u s t r i a l m a n u fact u r i n g e q u i p m ent r08 d s0 064e j02 00 rev.2.00 jun 2 0, 2013 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
NV4V41SF chapter title r08ds0064ej0200 rev.2.00 page 2 of 7 jun 20, 2013 package dimensions (unit: mm) bottom view 1 2 3 0.40.1 0.5 min. 0.40.1 1.00.15 2.00.2 cap glass ld chip stem reference plain p.c.d. 3 (stem gnd) 2 1 ld 902 y x z 1.60.2 6.50.5 1.30.08 1.20.1 2.30.3 3? 0.450.1 3.550.1 4.5 max. pin connections remark cap glass thickness : 0.250.03 mm cap glass refractive index : 1.53 ( = 405 nm) 5.60.1 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NV4V41SF chapter title r08ds0064ej0200 rev.2.00 page 3 of 7 jun 20, 2013 ordering information part number order number rank packing style NV4V41SF-a hv tray packing (100 p/tray), with data NV4V41SF xv individual packing (for samples), with data absolute maximum ratings (t c = 25 c, unless otherwise specified) parameter symbol ratings unit optical output power (cw) p o 700 mw reverse voltage of ld v r 2 v operating case temperature t c 0 to +30 c storage temperature t stg ? 40 to +85 c recommended operating conditions (t c = 25 c, unless otherwise specified) parameter symbol max. unit optical output power (cw) p o 600 mw electro-optical characteristics (t c = 25 c, unless otherwise specified) parameter symbol conditions min. typ. max. unit threshold current i th cw 140 180 ma operating current i op cw, p o = 600 mw 500 600 ma operating voltage v op cw, p o = 600 mw 4.1 4.6 v slope efficiency d cw, p o = 100 mw, 600 mw 1.0 1.7 w/a peak wavelength p cw, p o = 600 mw 400 ? 405 nm beam divergence (lateral) // 10 16 22 deg. beam divergence (vertical) cw, p o = 600 mw (1/e 2 ) 35 40 50 position accuracy angle (vertical) ? cw, p o = 600 mw ? 5 ? 5 deg. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NV4V41SF chapter title r08ds0064ej0200 rev.2.00 page 4 of 7 jun 20, 2013 typical characteristics (t c = 25 c, unless otherwise specified ) 399 0 200 400 600 800 406 405 404 403 402 401 400 0.0038 nm/mw 399 0 1020304050 406 405 404 403 402 401 400 0 700 100 200 300 400 500 600 0 700 500 600 300 400 100 200 10c 20c 30c 40c 0 700 100 200 300 400 500 600 0 6 4 5 2 3 1 10c 20c 30c 40c 25c n= 5 0.079 nm/c 600 mw n= 5 ? 30 ? 20 ? 10 0 10 20 30 600 mw 400 mw 200 mw ? 40 ? 30 ? 20 ? 10 0 10 20 4030 600 mw 400 mw 200 mw optical output power p o (mw) peak wavelength p (nm) optical output power vs. forward current forward current i f (ma) optical output power p o (mw) forward voltage vs. forward current forward current i f (ma) forward voltage v f (v) power dependence of peak wavelength temperature dependence of peak wavelength ffp (lateral) beam divergence (degrees) relative intensity ffp (vertical) beam divergence (degrees) relative intensity temperature ( c) peak wavelength p (nm) remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NV4V41SF chapter title r08ds0064ej0200 rev.2.00 page 5 of 7 jun 20, 2013 0.2 0.4 406 401 400 403 404 405 0 1.2 1.0 0.6 0.8 10c 25c 40c 600 mw wavelength spectrum wavelength (nm) relative intensity remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NV4V41SF chapter title r08ds0064ej0200 rev.2.00 page 6 of 7 jun 20, 2013 notes on handling (unit: mm) 1. recommended soldering conditions ? peak temperature 350 c ? time 3 seconds ? soldering of leads should be made at the point 2.0 mm from the root of the lead ? this device cannot be mounted using reflow soldering. 2. usage cautions (1) take the following steps to ensure that the device is not damaged by static electricity. ? wear an antistatic wrist strap when soldering the device. we recommend a strap with a 1 m resistor. ? make sure that the work table and soldering iron are grounded. ? make sure that the soldering iron does not leak. (2) do not subject the package to undue stress. the package has a tensile strength of 1n or less. do not exceed this rating. also, avoid be nding the leads as much as possible. if the leads must be bent, bend them only once, making sure to anchor the stem base of the lead. (3) do not allow the cap glass of the package to become scratched or dirty. also, do not subject the cap glass to external force. (4) be sure to attach a heat si nk to sufficiently dissipate heat. (5) use the device as soon as possible after opening the bag. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NV4V41SF chapter title r08ds0064ej0200 rev.2.00 page 7 of 7 jun 20, 2013 safety information on this product danger visible laser radiation avoid eye or skin exposure to direct or scattered radiation output power 3w max wavelength 400 to 680nm class iv laser product avoid exposure-invisible laser radiation is emitted from this aperture semiconductor laser warning laser beam a laser beam is emitted from this diode during operation. if the laser beam or its reflection enters your eye, it may cause injury to the eye or loss of eyesight. (note that, depending on the wavelength of the be am, the laser beam might not be visible.) ? do not look directly into the laser beam. ? avoid exposure to the laser beam, any reflected or collimated beam. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history NV4V41SF data sheet description rev. date page summary 0.01 jul 11, 2012 ? first edition issued throughout this data sheet is officially released (preliminary data sheet becomes data sheet). the typical values of threshold cu rrent and operating voltage are changed in electro-optical characteristics. p.3 the unit, ?(1/e 2 )?, is deleted from the value of p o . 1.00 jan 09, 2013 pp.4,5 typical characteristics is added. 2.00 jun 20, 2013 p.2 modification of package dimensions p.3 modification of ordering information
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. htt p ://www.renesas.co m refer to "htt p ://www.renesas.com/" for the latest and detailed information . california eastern laboratories , inc. 4590 patrick henr y drive, santa clara, california 95054, u.s.a . tel: +1-408-919-2500, fax: +1-408-988-0279 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-651-700, fax: +44-1628-651-804 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co. , ltd . 11f., samik lavied' or bld g ., 720-2 yeoksam-don g , kan g nam-ku, seoul 135-080, korea tel: +82-2-558-3737 , fax: +82-2-558-514 1 s ale s o ffi c e s ? 2013 renesas electronics corporation. all rig hts reserved. [colophon 2.2 ]


▲Up To Search▲   

 
Price & Availability of NV4V41SF

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X