r08ds0070ej0100 rev.1.00 page 1 of 7 jun 20, 2013 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. preliminary data sheet NV4V31SF blue-violet laser diode 405 nm blue-violet laser light source description the NV4V31SF is a blue-violet laser diode with a wavelength of 405 nm. a newly developed ld chip structure achieves a high optical power output of 175 mw (cw). the NV4V31SF can provide excellent linearity from low to high output at high temperatures, and re duces the unevenness of beam divergence. features ? high optical output power p o = 175 mw @cw ? peak wavelength p = 405 nm typ. ? single transverse mode (lateral) ? wide operating temperature range t c = ? 5 to + 85 c ? 5.6 mm can package applications ? blue-violet laser light source r08ds0070ej0100 rev.1.00 jun 20, 2013
NV4V31SF chapter title r08ds0070ej0100 rev.1.00 page 2 of 7 jun 20, 2013 package dimensions (unit: mm) bottom view 1 2 3 0.4 0.1 0.5 min. 0.4 0.1 1.0 0.15 2.0 0.2 cap glass ld chip stem reference plain p.c.d. 3 (stem gnd) 2 1 ld 90 2 y x z 1.6 0.2 6.50.5 1.30.08 1.20.1 2.30.3 3? 0.450.1 3.550.1 4.5 max. pin connections remark cap glass thickness : 0.250.03 mm cap glass refractive index : 1.53 ( = 405 nm) 5.60.1
NV4V31SF chapter title r08ds0070ej0100 rev.1.00 page 3 of 7 jun 20, 2013 ordering information part number order number rank packing style NV4V31SF-a hv tray packing (100 p/tray), with data NV4V31SF xv individual packing (for samples), with data absolute maximum ratings (t c = 25 c, unless otherwise specified) parameter symbol ratings unit optical output power (cw) p o 210 mw reverse voltage of ld v r 2 v operating case temperature t c ? 5 to +85 c storage temperature t stg ? 40 to +85 c recommended operating conditions (t c = 25 c, unless otherwise specified) parameter symbol max. unit optical output power (cw) p o 175 mw electro-optical characteristics (t c = 25 c, unless otherwise specified) parameter symbol conditions min. typ. max. unit threshold current i th cw 35 55 ma operating current i op cw, p o = 175 mw 150 200 ma operating voltage v op cw, p o = 175 mw 5.0 6.5 v slope efficiency d cw, p o = 20 mw, 175 mw 1.1 1.55 w/a peak wavelength p cw, p o = 175 mw 400 405 410 nm beam divergence (lateral) // 6 9 12 deg. beam divergence (vertical) cw, p o = 175 mw 15 20 25 position accuracy angle (lateral) ? // ? 3 0 3 position accuracy angle (vertical) ? cw, p o = 175 mw ? 3 0 3 deg.
NV4V31SF chapter title r08ds0070ej0100 rev.1.00 page 4 of 7 jun 20, 2013 typical characteristics (t c = 25 c, unless otherwise specified ) optical output power p o (mw) peak wavelength p (nm) temperature ( c) peak wavelength p (nm) optical output power vs. forward current forward current i f (ma) optical output power p o (mw) forward voltage vs. forward current forward current i f (ma) forward voltage v f (v) 400 0 50 100 150 200 410 408 406 404 402 power dependence of peak wavelength n = 5 0.011 nm/mw 400 0 20 40 60 80 100 412 410 408 406 404 402 temperature dependence of peak wavelength 0.064 nm/ c 175 mw n = 5 ? 30 ? 20 ? 10 0 10 20 30 ffp (lateral) angle (degrees) relative intensity 175 mw 120 mw 80 mw 40 mw ffp (vertical) angle (degrees) relative intensity ? 30 ? 20 ? 10 0 10 20 30 175 mw 120 mw 80 mw 40 mw 0 50 100 150 200 0 2 4 6 8 10 20 c 25 c 30 c 40 c 50 c 60 c 70 c 80 c 90 c 0 50 100 150 200 20 c 25 c 30 c 40 c 50 c 60 c 70 c 80 c 90 c 0 20 40 60 80 100 120 140 160 180 200 remark the graphs indicate nominal characteristics.
NV4V31SF chapter title r08ds0070ej0100 rev.1.00 page 5 of 7 jun 20, 2013 400 402 404 406 408 410 wavelength spectrum (100 mw) wavelength (nm) relative intensity 0 1.2 1 0.8 0.6 0.4 0.2 400 402 404 406 408 410 wavelength spectrum (175 mw) wavelength (nm) relative intensity 0 1.2 1 0.8 0.6 0.4 0.2 remark the graphs indicate nominal characteristics.
NV4V31SF chapter title r08ds0070ej0100 rev.1.00 page 6 of 7 jun 20, 2013 notes on handling 1. recommended soldering conditions ? peak temperature 350 c ? time 3 seconds ? soldering of leads should be made at the point 2.0 mm from the root of the lead ? this device cannot be mounted using reflow soldering. 2. usage cautions (1) take the following steps to ensure that the device is not damaged by static electricity. ? wear an antistatic wrist strap when soldering the device. we recommend a strap with a 1 m resistor. ? make sure that the work table and soldering iron are grounded. ? make sure that the soldering iron does not leak. (2) do not subject the package to undue stress. the package has a tensile strength of 1n or less. do not exceed this rating. also, avoid be nding the leads as much as possible. if the leads must be bent, bend them only once, making sure to anchor the stem base of the lead. (3) do not allow the cap glass of the package to become scratched or dirty. also, do not subject the cap glass to external force. (4) be sure to attach a heat si nk to sufficiently dissipate heat. (5) use the device as soon as possible after opening the bag.
NV4V31SF chapter title r08ds0070ej0100 rev.1.00 page 7 of 7 jun 20, 2013 safety information on this product danger visible laser radiation avoid eye or skin exposure to direct or scattered radiation avoid exposure-invisible laser radiation is emitted from this aperture semiconductor laser warning laser beam a laser beam is emitted from this diode during operation. if the laser beam or its reflection enters your eye, it may cause injury to the eye or loss of eyesight. (note that, depending on the wavelength of the be am, the laser beam might not be visible.) ? do not look directly into the laser beam. ? avoid exposure to the laser beam, any reflected or collimated beam.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history NV4V31SF data sheet description rev. date page summary 0.01 jan 23, 2013 ? first edition issued 1.00 jun 20, 2013 p.2 modification of package dimensions p.3 modification of ordering information
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