cystech electronics corp. spec. no. : c627g6 issued date : 2013.10.17 revised date : page no. : 1/9 HBNP5213G6 cystek product specification npn and pnp dual epitaxial planar transistors HBNP5213G6 features ? high bv ceo ? high current ? excellent dc current gain characteristics ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping HBNP5213G6-0-t1-g tsop-6 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel HBNP5213G6 tsop-6 c2 e1 c1 b1 b2 e2 b : base e : emitter c : collector environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pc s / tape & reel, 7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c627g6 issued date : 2013.10.17 revised date : page no. : 2/9 HBNP5213G6 cystek product specification absolute maximum ratings (ta=25 c) limits parameter symbol npn pnp unit collector-base voltage v cbo 100 -100 v collector-emitter voltage v ceo 80 -80 v emitter-base voltage v ebo 7 -7 v collector current(dc) (note 1) i c 1 -1 a peak collector current (note 2) i cp 2 -2 a peak base current (note 2) i bp 200 -200 ma pd 1.14 w total power dissipation (note 1) linear derating factor 0.01 w / c operating junction and storage temperature tj, tstg -55~+150 c thermal resistance, junction-to-ambient (note 1) rth,ja 110 c/w note : 1.surface mounted on 1 in2 copper pad of fr-4 board, t 5 sec; 180 c/w when mounted on minimum copper pad 2. pulse width limited by maximum junction temperature npn electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions bv cbo 100 - - v i c =50 a bv ceo 80 - - v i c =1ma bv ebo 7 - - v i e =50 a i cbo - - 100 na v cb =100v, i e =0 i ebo - - 100 na v eb =7v, i c =0 *v ce(sat) - 0.15 0.3 v i c =500ma, i b =20ma *v ce(sat) - - 0.5 v i c =1a, i b =50ma *v be(sat) - - 1.2 v i c =1a, i b =50ma *h fe 1 180 - 390 - v ce =10v, i c =150ma *h fe 2 60 - - - v ce =10v, i c =500ma f t 150 230 - mhz v ce =10v, i c =50ma, f=100mhz cob - 6 15 pf v cb =10v, i e =0a, f=1mhz *pulse test: pulse width 380 s, duty cycle 2%
cystech electronics corp. spec. no. : c627g6 issued date : 2013.10.17 revised date : page no. : 3/9 HBNP5213G6 cystek product specification pnp electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions bv cbo -100 - - v i c =-100 a bv ceo -80 - - v i c =-10ma bv ebo -7 - - v i e =-10 a i cbo - - -100 na v cb =-100v i ebo - - -100 na v eb =-7v *v ce(sat) 1 - -0.16 -0.3 v i c =-500ma, i b =-50ma *v ce(sat) 2 - - -0.6 v i c =-700ma, i b =-35ma *v be(sat) - - -1.2 v i c =-1a, i b =-50ma *h fe 1 180 - 390 - v ce =-10v, i c =-150ma *h fe 2 50 - - - v ce =-10v, i c =-500ma f t 150 200 - mhz v ce =-10v, i c =-50ma, f=100mhz cob - 11 15 pf v cb =-10v, i e =0a,f=1mhz *pulse test: pulse width 380 s, duty cycle 2% recommended soldering footprint
cystech electronics corp. spec. no. : c627g6 issued date : 2013.10.17 revised date : page no. : 4/9 HBNP5213G6 cystek product specification q1, npn typical characteristics current gain vs collector current 10 100 1000 1 10 100 1000 collector current ---ic(ma) current gain---hfe hfe vce=5v vce=2v vce=1v saturation voltage vs collector current 10 100 1000 1 10 100 1000 collector current ---ic(ma) saturation voltage-(mv) vcesat ic=10ib ic=25ib ic=20ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current--- ic(ma) saturation voltage-(mv) vbesat@ic=10ib on voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current--- ic(ma) on voltage-(mv) vbeon@vce=2v transition frequency vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) transition frequency---ft(mhz) vce=10v f=1mhz capacitance characteristics 1 10 100 0.1 1 10 100 collector base voltage-- vcb(v) capacitance---cob(pf) f=1mhz
cystech electronics corp. spec. no. : c627g6 issued date : 2013.10.17 revised date : page no. : 5/9 HBNP5213G6 cystek product specification q2, pnp typical characteristics current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe vce=1v vce=2v vce=3v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vcesat ic=100ib ic=50ib ic=20ib ic=10ib saturation voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib on voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) on voltage---(mv) vbeon@vce=3v transition frequency vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) transition frequency---ft(mhz) capacitance characteristics 1 10 100 1 10 100 reverse-biased collector base voltage---vcb(v) collector output capacitance---cob(pf )
cystech electronics corp. spec. no. : c627g6 issued date : 2013.10.17 revised date : page no. : 6/9 HBNP5213G6 cystek product specification reel dimension
cystech electronics corp. spec. no. : c627g6 issued date : 2013.10.17 revised date : page no. : 7/9 HBNP5213G6 cystek product specification carrier tape dimension recommended soldering footprint
cystech electronics corp. spec. no. : c627g6 issued date : 2013.10.17 revised date : page no. : 8/9 HBNP5213G6 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c627g6 issued date : 2013.10.17 revised date : page no. : 9/9 HBNP5213G6 cystek product specification tsop-6 dimension inches 6-lead tsop-6 plastic surface mounted package cystek package code: g6 marking: style: pin 1. base1 (b1) pin 2. emitter2 (e2) pin 3. base2 (b2) pin 4. collector2 (c2) pin 5. emitter1 (e1) pin 6. collector1 (c1) 5213 date code device name millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1063 0.1220 2.70 3.10 g 0 0.0039 0 0.10 b 0.1024 0.1181 2.60 3.00 h - 0.0098 - 0.25 c 0.0551 0.0709 1.40 1.80 i 0.0047 ref 0.12 ref d 0.0748 ref 1.90 ref j 0.0177 ref 0.45 ref d1 0.0374 ref 0.95 ref k 0.0236 ref 0.60 ref d2 0.0374 ref 0.95 ref l 0 10 0 10 e 0.0118 0.0197 0.30 0.50 m - 0.0433 - 1.10 f 0.0276 0.0394 0.70 1.00 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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