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  publication date : mar., 2012 cstg-14554 1 < power gaas fet > MGF1941AL micro-x type plastic package description the MGF1941AL power mes fet is designed for use in s to ku band power amplifiers. features high gain and high p1db p1db=15dbm, glp=10 db (typ.) @ f=12ghz application s to ku band low noise amplifiers quality grade gg recommended bias conditions v ds =3v , i d =30ma ordering information tape & reel 4,000pcs/reel rohs compliant MGF1941AL is a rohs compliant product. rohs compliance is indicated by the letter ?g? after the lot marking. absolute maximum ratings (ta=25 ? c ) symbol parameter ratings unit v gdo gate to drain voltage -5 v v gso gate to source voltage -5 v i d drain current 120 ma pt total power dissipation 300 mw t ch channel temperature 175 ? c t stg storage temperature -65 to +150 ? c electrical characteristics (ta=25 ? c ) symbol parameter test conditions limits unit min. typ. max v (br)gdo gate to drain breakdown voltage i g =-30 ? a -8 -15 -- v i dss saturated drain current v gs =0v,v ds =3v 35 60 120 ma v gs(off) gate to source cut-off voltage v ds =3v,i d =300 ? a -0.3 -1.4 -3.5 v p1db output power at 1db gain compression v ds =3v, i d =30ma, f=12ghz 11 15 -- dbm glp linear power gain v ds =3v, i d =30ma, f=12ghz, pin=-5dbm 7 10 -- db gs associated gain -- 9 -- db nfmin minimum noise figure v ds =3v, i d =10ma, f=12ghz -- 1.2 -- db note : p1b and glp are tested with sampling inspection. gs/nfmin are not tested. outline drawing fig.1 mitsubishi proprietary not to be reproduced or disclosed without permission by mitsubishi electric
< power gaas fet > MGF1941AL micro-x type plastic package publication date : mar., 2012 2 (0.30) (0.30) 3.20.1 2.60.1 (0.30) (0.30) 0.650.1 0.50.1 2.60.1 3.20.1 1.350.2 0.150.05 2.20.1 1.70.1 (2.3) (2.3) fig.1 unit : mm gate source drain top side bottom j aaa (gd-32)
< power gaas fet > MGF1941AL micro-x type plastic package publication date : mar., 2012 3 typical characteristics (ta=25c) po vs. pin -5 0 5 10 15 20 -15 -10 -5 0 5 10 15 pin (dbm) po (dbm) ta=25deg.c vds=3v id=30ma f=12ghz i d vs. v gs 0 10 20 30 40 50 60 70 80 90 100 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 gate to source voltage v gs (v) drain current i d (ma) ta=25deg.c vds=3v i d vs. v ds 0 10 20 30 40 50 60 70 80 90 100 0.0 1.0 2.0 3.0 4.0 5.0 drain to source voltage v ds (v) drain current i d (ma) ta=25deg.c vgs=-0.2v/step vgs=0 v nf , gs vs. id 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1020304050 id(ma) nf(db) 0 2 4 6 8 10 12 gs(db) f=12ghz vds=3v ids=10ma
< power gaas fet > MGF1941AL micro-x type plastic package publication date : mar., 2012 4 s parameters recommended foot pattern; ro4003c/rogers ( ? r=3.38, t=0.508mm) measurement plane (2.6mm) (conditions:vds=3v,id=30ma,ta=25deg.c) f s11 s21 s12 s22 k mag/msg (ghz) mag. angle mag. angle mag. angle mag. angle (db) 1 0.981 -20.3 5.081 159.6 0.016 78.2 0.567 -11.2 0.21 25.0 2 0.933 -40.4 4.936 140.0 0.031 67.1 0.549 -22.2 0.38 22.0 3 0.862 -60.6 4.742 120.8 0.045 56.7 0.520 -32.9 0.54 20.3 4 0.780 -81.1 4.509 102.2 0.056 47.1 0.482 -43.4 0.70 19.1 5 0.694 -102.4 4.265 84.0 0.066 38.0 0.440 -53.8 0.85 18.1 6 0.610 -124.3 3.982 66.6 0.073 30.2 0.394 -63.2 1.00 17.4 7 0.547 -149.6 3.689 49.0 0.079 22.2 0.340 -76.0 1.12 14.6 8 0.499 -174.0 3.389 32.7 0.083 14.8 0.288 -87.7 1.27 13.0 9 0.480 162.9 3.117 17.6 0.087 9.4 0.243 -100.4 1.37 11.9 10 0.480 142.0 2.904 3.5 0.091 5.7 0.209 -114.9 1.43 11.1 11 0.505 123.1 2.720 -10.8 0.098 1.6 0.185 -135.0 1.39 10.7 12 0.548 106.4 2.569 -25.2 0.107 -3.6 0.177 -162.1 1.29 10.6 13 0.588 90.2 2.393 -39.4 0.113 -10.5 0.176 168.8 1.24 10.3 14 0.633 76.4 2.277 -53.3 0.122 -16.3 0.215 147.8 1.11 10.7 15 0.670 62.2 2.142 -69.1 0.131 -24.9 0.287 125.6 1.00 11.8 16 0.722 53.0 1.968 -84.2 0.135 -33.3 0.354 103.6 0.90 11.6 17 0.761 41.1 1.799 -98.6 0.140 -40.8 0.423 88.8 0.82 11.1 18 0.788 30.8 1.614 -113.4 0.143 -49.7 0.506 74.5 0.74 10.5
< power gaas fet > MGF1941AL micro-x type plastic package publication date : mar., 2012 5 s parameters recommended foot pattern; ro4003c/rogers ( ? r=3.38, t=0.508mm) measurement plane (2.6mm) (conditions:vds=3v,id=10ma,ta=25deg.c) f s11 s21 s12 s22 k mag/msg (ghz) mag. angle mag. angle mag. angle mag. angle (db) 1 0.988 -17.8 3.647 161.6 0.019 77.8 0.625 -11.5 0.16 22.8 2 0.955 -35.7 3.602 143.8 0.038 66.0 0.609 -23.0 0.29 19.8 3 0.907 -54.0 3.549 125.9 0.054 54.5 0.581 -34.5 0.41 18.1 4 0.845 -73.0 3.478 108.0 0.069 43.2 0.544 -46.1 0.54 17.0 5 0.776 -92.9 3.394 90.2 0.081 32.1 0.498 -57.9 0.66 16.2 6 0.698 -113.8 3.266 72.6 0.090 21.8 0.445 -69.2 0.81 15.6 7 0.629 -138.1 3.101 54.1 0.096 11.1 0.384 -83.6 0.95 15.1 8 0.570 -161.9 2.904 37.0 0.098 1.1 0.325 -97.2 1.12 12.6 9 0.535 174.6 2.706 21.0 0.097 -6.2 0.272 -111.8 1.29 11.2 10 0.522 153.1 2.535 5.8 0.094 -10.7 0.234 -127.8 1.45 10.3 11 0.534 132.8 2.382 -9.3 0.095 -13.9 0.211 -148.2 1.51 9.8 12 0.568 114.5 2.249 -24.4 0.099 -17.3 0.207 -173.7 1.46 9.6 13 0.604 97.1 2.091 -39.2 0.101 -22.4 0.212 159.9 1.44 9.2 14 0.642 82.1 1.981 -53.6 0.107 -25.9 0.250 140.7 1.32 9.3 15 0.673 67.1 1.844 -69.7 0.114 -32.4 0.322 120.7 1.20 9.4 16 0.724 57.1 1.685 -84.9 0.118 -39.5 0.386 99.9 1.06 10.0 17 0.761 44.9 1.531 -99.4 0.122 -45.4 0.450 85.7 0.96 11.0 18 0.787 34.2 1.364 -114.1 0.126 -53.4 0.528 72.0 0.86 10.3
< power gaas fet > MGF1941AL micro-x type plastic package publication date : mar., 2012 6 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! ? mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibilit y that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire ore property damage. remember to give due consideration to safety when making your circuit design s, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non -flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assi st our customers in the se lection of the mitsubishi semiconductor product best suited to the customer?s application; they do not c onvey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electric corporation or a third party. ? mitsubishi electric corporation as sumes no responsibility for any damage, or infringement of any third- party?s rights, originating in the use of any product dat a, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, in cluding product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mi tsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the la test product information before purchasing a product listed herein. the information described here may contain tech nical in accuracies or typographical errors. mitsubishi electric corporation assume s no responsibility for any damage, li ability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http://www.mitsubi shielectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the inform ation and products. mitsubishi electric corporation assumes no responsibility fo r any damage, liability or other loss resulting from the information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circum stances in which human life is potent ially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, ae rospace, nuclear, or undersea repeater use. ? the prior written approval of mitsubishi electric corpor ation is necessary to reprint or reproduce in whole ore in part these materials. ? if these products or technologies are subject to th e japanese export control restrictions, they must be exported under a license from the japanese governm ent and cannot be imported into a country other than the approved destination. any diversion or re-export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these ma terials or the products contained therein.


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