1 tm file number 4245.2 HGTG27N60C3R 54a, 600v, rugged ufs series n-channel igbt this igbt was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. this device demonstrates rugged performance capability when subjected to harsh short circuit withstand time (scwt) conditions. the parts have ultrafast (ufs) switching speed while the on-state conduction losses have been kept at a low level. the electrical speci?ations include typical turn-on and turn-off dv/dt ratings. these ratings and the turn-on ratings include the effect of the diode, in the test circuit (figure 16). the data was obtained with the diode at the same t j as the igbt under test. formerly developmental type ta49048. symbol features 54a, 600v, t c = 25 o c 600v switching soa capability typical fall time at t j = 150 o c . . . . . . . . . . . . . . . . 180ns short circuit rating at t j = 150 o c. . . . . . . . . . . . . . . 10 s low conduction loss packaging jedec style to-247 ordering information part number package brand HGTG27N60C3R to-247 27n60c3r note: when ordering, use the entire part number. c e g collector (flange) e c g intersil corporation igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet june 2000 [ /title (hgt g27n6 0c3r) /sub- ject (54a, 600v, rug- ged ufs series n- chan- nel igbt) /autho r () /key- words (inter- sil corpo- ration, semi- con- ductor, ava- lanche energy rated, switch ing power sup- plies, power caution: these devices are sensitive to electrostatic discharge; follow proper esd handling procedures. 1-888-intersil or 321-724-7143 | intersil and design is a trademark of intersil corporation. | copyright intersil corporation 2000 obsolete pr oduct possible substitute pr oduct hgtg30n60b3
2 absolute maximum ratings t c = 25 o c, unless otherwise speci?d HGTG27N60C3R units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .bv ces 600 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 54 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 27 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 108 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v gem 30 v switching safe operating area at t j = 150 o c (figure 12) . . . . . . . . . . . . . . . . . . . . . . ssoa 108a at 600v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 208 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 w/ o c reverse voltage avalanche energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e arv 100 mj operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -40 to 150 o c maximum lead temperature for soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 260 o c short circuit withstand time (note 2) at v ge = 15v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t sc 10 s caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. notes: 1. pulse width limited by maximum junction temperature. 2. v ce(pk) = 440v, t j = 150 o c, r g = 3 ?. electrical speci?ations t c = 25 o c, unless otherwise speci?d parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 600 - - v emitter to collector breakdown voltage bv ecs i c = 10ma, v ge = 0v 15 - - v collector to emitter leakage current i cesd v ce = bv ces t c = 25 o c - - 250 a v ce = bv ces t c = 150 o c - - 3.0 ma collector to emitter saturation voltage v ce(sat) i c = i c110 , v ge = 15v t c = 25 o c - 1.8 2.2 v t c = 150 o c - 2.1 2.5 v gate to emitter threshold voltage v ge(th) i c = 250 a, v ce = v ge 3.5 5.7 7.5 v gate to emitter leakage current i ges v ge = 20v - - 100 na switching soa (see figure 12) ssoa t j = 150 o c, r g = 3 ? v ge = 15v, v ce(pk) = 600v l = 50 h 108 - - a gate to emitter plateau voltage v gep i c = i c110 , v ce = 0.5 bv ces - 9.0 - v on-state gate charge q g(on) i c = i c110 , v ce = 0.5 bv es v ge = 15v - 156 203 nc v ge = 20v - 212 277 nc current turn-on delay time t d(on)i t j = 150 o c i ce = i c110 v ce(pk) = 0.8 bv ces v ge = 15v r g = 3 ? l = 1mh diode used in test circuit rurp3060 at 150 o c -38-ns current rise time t ri -30-ns current turn-off delay time t d(off)i - 250 500 ns current fall time t fi - 180 400 ns turn-off voltage dv/dt (note 3) dv ce /dt - 2 - v/ns turn-on voltage dv/dt (note 3) dv ce /dt - 7 - v/ns turn-on energy (note 4) e on - 2.3 - mj turn-off energy (note 5) e off - 2.0 - mj HGTG27N60C3R
3 thermal resistance r jc - - 0.6 o c/w notes: 3. dv ce /dt depends on the diode used and the temperature of the diode. dv ce /dt is measured from 90% to 10% of the voltage. 4. turn-on energy loss (e on ) includes diode losses and is defined as the integral of the instantaneous power loss starting at the leading edge of the input pulse and ending at the point where the collector voltage equals v ce (on). this value of e on was obtained with a rurp3060 diode at t j = 150 o c. a different diode or temperature will result in a different e on . for example with diode at t j = 25 o c e on is about one half the value at 150 o c. 5. turn-off energy loss (e off ) is de?ed as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. typical performance curves figure 1. transfer characteristics figure 2. saturation characteristics figure 3. collector to emitter on-state voltage figure 4. dc collector current vs case temperature electrical speci?ations t c = 25 o c, unless otherwise speci?d parameter symbol test conditions min typ max units 910 13 15 200 i ce , collector to emitter current (a) 8 7 6111214 v ge , gate to emitter voltage (v) 175 150 125 100 75 50 25 0 t c = -40 o c t c = 25 o c t c = 150 o c duty cycle <0.5%, v ce = 10v i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 3 2 1 0678910 0 20 40 60 80 100 120 45 duty cycle <0.5%, t c = 25 o c pulse duration = 250 s v ge = 15v v ge = 10v v ge = 12v v ge = 9v v ge = 8.5v v ge = 8.0v v ge = 7.5v i ce , collector to emitter current (a) 100 26 410 125 v ce , collector to emitter voltage (v) 75 150 175 200 8 0 0 25 50 250 13579 t c = 25 o c t c = 150 o c 225 v ge = 15v pulse duration = 250 s duty cycle <0.5% t c = -40 o c i ce , dc collector current (a) t c , case temperature ( o c) 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 50 45 55 v ge = 15v HGTG27N60C3R
4 figure 5. turn on delay time vs collector to emitter current figure 6. turn off delay time vs collector to emitter current figure 7. turn on rise time vs collector to emitter current figure 8. turn off fall time vs collector to emitter current figure 9. turn on energy loss vs collector to emitter current figure 10. turn off energy loss vs collector to emitter current typical performance curves (continued) 515 75 35 55 65 32 34 36 38 40 t d(on)i , turn on delay time (ns) i ce , collector to emitter current (a) 42 44 25 45 85 46 t j = 150 o c, r g = 3 ? , l = 1mh, v ce(pk) = 480v v ge = 15v t d(off)i , turn off delay time (ns) i ce , collector to emitter current (a) 210 250 260 230 220 200 t j = 150 o c, r g = 3 ? , l = 1mh, v ce(pk) = 480v, v ge = 15v 240 515 75 35 55 65 25 45 85 t ri , turn on rise time (ns) i ce , collector to emitter current (a) 555 45 25 35 25 50 75 75 125 15 65 100 85 150 175 200 225 250 t j = 150 o c, r g = 3 ? , l = 1mh, v ce(pk) = 480v, v ge = 15v 0 i ce , collector to emitter current (a) t fi , fall time (ns) 160 170 180 190 200 210 220 230 240 555 45 25 35 75 15 65 85 t j = 150 o c, r g = 3 ? , l = 1mh, v ce(pk) = 480v, v ge = 15v i ce , collector to emitter current (a) e on , turn on energy loss (mj) 2 4 6 0 12 555 45 25 35 75 15 65 85 8 10 t j = 150 o c, r g = 3 ? , l = 1mh, v ce(pk) = 480v, v ge = 15v i ce , collector to emitter current (a) e off , turn off energy loss (mj) 1 2 3 4 5 8 0 t j = 150 o c, r g = 3 ? , l = 1mh, v ce(pk) = 480v, v ge = 15v 555 45 25 35 75 15 65 85 6 7 HGTG27N60C3R
5 figure 11. operating frequency vs collector to emitter current figure 12. switching safe operating area figure 13. capacitance vs collector to emitter voltage figure 14. gate charge waveforms figure 15. igbt normalized transient thermal impedance, junction to case typical performance curves (continued) i ce , collector to emitter current (a) f max , operating frequency (khz) 30 20 10 5 1 10 30 20 100 50 70 200 t j = 150 o c, r g = 3 ? , l = 1mh, v ce(pk) = 480v t c = 75 o c, v ge = 15v v ce(pk) , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 20 40 60 80 100 0 100 200 300 400 500 600 700 t j = 150 o c, r g = 3 ? , v ge = 15v, l = 1mh 120 parts may current limit in this region v ce , collector to emitter voltage (v) 0 5 10 15 20 25 0 1000 6000 2000 5000 c, capacitance (pf) 3000 7000 4000 frequency = 1mhz c oes 8000 c res c ies 9000 12 6 0 30 150 15 3 9 0 120 90 60 q g , gate charge (nc) v ge , gate to emitter voltage (v) v ce = 600v v ce = 200v v ce = 400v t 1 , rectangular pulse duration (s) 10 -5 10 -3 10 0 10 1 10 -4 10 -1 10 -2 10 0 z jc , normalized thermal impedance 10 -1 10 -2 t 1 t 2 p d duty cycle - descending order 0.5 0.2 0.1 0.05 0.01 0.02 single pulse notes: duty factor: d = t 1 /t 2 peak t j = (p d x z jc x r jc ) + t c HGTG27N60C3R
6 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ?ccosorbd ? ld26?or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open-circuited or ?ating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 11) is presented as a guide for estimating device performance for a speci? application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 3, 5, 6, 9 and 10. the operating frequency plot (figure 11) of a typical device shows f max1 or f max2 whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is de?ed by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other de?itions are possible. t d(off)i and t d(on)i are de?ed in figure 17. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on ). the allowable dissipation (p d ) is defined by p d =(t jm -t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 11) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2 shown in figure 17. e on is the integral of the instantaneous power loss (i ce xv ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce x v ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). test circuit and waveforms figure 16. inductive switching test circuit figure 17. switching test waveforms r g = 3 ? l = 1mh v dd = 480v + - rurp3060 t t d (off)i t ri t d (on)i 10% 90% 10% 90% v ce i ce v ge e off e on HGTG27N60C3R eccosorbd?is a trademark of emerson and cumming, inc.
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